MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2N6388 Features * NPN Darlington Power Transistor This device is designed for general purpose amplifier and low-speed switching applications. Maximum Ratings* Symbol V CEO V CBO V EBO IC IB TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Peak Base Current Operating Junction Temperature Storage Temperature Rating 80 80 5.0 10 15 250 -55 to +150 -55 to +150 Unit V V V TO-220 B C mA O C O C D A K PD RJ C RJA Rating Total Device Dissipation Derate above 25OC Total Device Dissipation Derate above 25OC Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 65 0.52 2.0 0.016 1.92 62.5 Unit mW mW/OC mW mW/OC O C/W O C/W F G I Min Max Units 80 --- Vdc --- 1.0 mAdc 2 3 N H H Electrical Characteristics @ 25 C Unless Otherwise Specified Parameter J 1 O Symbol E PIN Thermal Characteristics Symbol PD L M A PIN 1. PIN 2. PIN 3. BASE COLLECTOR EMITTER OFF CHARACTERISTICS VCEO(sus) ICEO ICEX IE BO Collector-Emitter Breakdown Voltage (1) (IC=200mAdc, IE =0) Collector Cutoff Current (VCB=80Vdc, IE =0) Collector Cutoff Current (VCE=80Vdc, VEB(off)=1.5Vdc) (VCE=80Vdc, VEB(off)=1.5Vdc, TC=125 OC) Emitter Cutoff Current (VEB =5.0Vdc, IC=0) ----- 300 3.0 uA mA --- 5.0 mAdc 1000 100 20000 --- --- ----- 2.0 3.0 Vdc ----- 2.8 4.5 Vdc ON CHARACTERISTICS (1) hFE DC Current Gain (V CE=3.0Vdc, IC=5.0Adc) (V CE=3.0Vdc, IC=10Adc) VCE(sat) Collector-Emitter Saturation Voltage (IC=5.0Adc, IB =0.01Adc) (IC=10Adc, IB =0.1Adc) VBE(on) Base-Emitter On Voltage (IC=5.0Adc, VCE=3.0Vdc) (IC=10Adc, VCE=3.0Vdc) *Indicates JEDEC Registered Data (1) Pulse Test: Pulse Width<300us, Duty Cycle<2.0% A B C D E F G H I J K L M N INCHES .560 .625 .380 .420 .100 .135 .230 .270 .380 .420 -----.250 .500 .580 .090 .110 .020 .045 .012 .025 .139 .161 .140 .190 .045 .055 .080 .115 MM 14.22 9.65 2.54 5.84 9.65 -----12.70 2.29 0.51 0.30 3.53 3.56 1.14 2.03 15.88 10.67 3.43 6.86 10.67 6.35 14.73 2.79 1.14 0.64 4.09 4.83 1.40 2.92 www.mccsemi.com Revision: 2 2003/04/30 MCC 2N6388 Symbol Parameter Min Max Units --- 200 pF 1000 --- --- 20 --- --- DYNAMIC CHARACTERISTICS Ccb Output Capacitance (VCB=10Vdc, f=1.0MHz) Small-Signal Current Gain (IC=1.0Adc, VCE=5.0Vdc, f=1.0MHz) Small-Signal Current Gain (IC=1.0Adc, VCE=5.0Vdc, f=1.0KHz) hfe |hfe| 7.0 5.0 3.0 3.0 ts 60 TC 2.0 40 1.0 20 0 tf t, TIME (s) PD, POWER DISSIPATION (WATTS) TA TC 4.0 80 1.0 0.7 TA 0 20 40 0.3 0.2 60 80 100 T, TEMPERATURE (C) 120 140 160 0.1 0.07 0.1 tr VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C 0.2 5.0 10 300 10,000 TJ = 25C 5000 3000 2000 200 C, CAPACITANCE (pF) hFE, SMALL-SIGNAL CURRENT GAIN 0.5 2.0 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 2. Switching Times Figure 1. Power Derating 1000 500 300 200 TC = 25C VCE = 4.0 Vdc IC = 3.0 Adc 100 50 30 20 10 td Cob 100 Cib 70 50 1.0 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 Figure 3. Small-Signal Current Gain 30 0.1 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 4. Capacitance www.mccsemi.com Revision: 2 2003/04/30 MCC 20,000 VCE = 4.0 V hFE, DC CURRENT GAIN 10,000 5000 TJ = 150C 3000 2000 25C 1000 -55C 500 300 200 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 0.1 5.0 7.0 10 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2N6388 3.0 TJ = 25C 2.6 IC = 2.0 A 1.8 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IB, BASE CURRENT (mA) 20 30 10 Figure 6. Collector Saturation Region 105 3.0 IC, COLLECTOR CURRENT (A) TJ = 25C V, VOLTAGE (VOLTS) 6.0 A 2.2 Figure 5. DC Current Gain 2.5 2.0 VBE(sat) @ IC/IB = 250 1.5 1.0 4.0 A VBE @ VCE = 4.0 V VCE(sat) @ IC/IB = 250 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) Figure 7. "On" Voltages 5.0 7.0 10 104 103 102 REVERSE FORWARD VCE = 30 V TJ = 150C 101 100 100C 25C 10-1 -0.6 -0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2 + 1.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 8. Collector Cut-Off Region www.mccsemi.com Revision: 2 2003/04/30