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Optimum Technology Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
Functional Block Diagram
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Ordering Information
GND
GND
GND
RF IN
GND
RF OUT
VDD
NC
2
1
4
3
7
8
5
6
RF2304
GENERAL PURPOSE LOW-NOISE AMPLIFIER
The RF2304 is a low-noise small-signal amplifier. The device is manufactured on a
low-cost Gallium Arsenide MESFET process, and has been designed for use as a
gain block in high-end communication systems operating from less than 300MHz
to above 2.5GHz. With +6dBm output power, it may also be used as a driver in
transmitter applications, or in highly linear receivers. The device is packaged in an
8-lead plastic package and is self-contained, requiring just an inductor and block-
ing capacitors to operate. The +6dBm output power, combined with the 1.8dB
noise figure at 900MHz allows excellent dynamic range for a variety of receive and
transmit applications.
Features
Single 2.7V to 6.0V Supply
6dBm Output Power
8dB Small Signal Gain at
900MHz
1.8dB Noise Figure at
900MHz
Low DC Current Consumption
of 5mA
300MHz to 2500MHz Opera-
tion
Applications
Receive or Transmit Low-
Noise Amplifiers
FDD and TDD Communication
Systems
Commercial and Consumer
Systems
Portable Battery Powered
Equipment
Wireless LAN
ISM Band Applications
RF2304 General Purpose Low-Noise Amplifier
RF2304PCBA-41X Fully Assembled Evaluation Board
Rev A7 DS060908
9
RoHS Compliant & Pb-Free Product
Package Style: SOIC-8
2 of 8
RF2304
Rev A7 DS060908
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Absolute Maximum Ratings
Parameter Rating Unit
Supply Voltage (VDD) -0.5 to +6.5 VDC
DC Current 40 mA
Input RF Power +10 dBm
Operating Ambient Temperature -40 to +85 °C
Storage Temperature -40 to +150 °C
Parameter Specification Unit Condition
Min. Typ. Max.
Operating Range
Overall Frequency Range 300 2500 MHz
Supply Voltage 2.7 6.0 V
Operating Current (ICC)8.4mAV
CC=3V, Temp=27°C
71126mAV
CC=5V, Temp=27°C
Operating Ambient Temperature -40 +85 °C
3V Performance
Gain 11.7 dB Freq=300MHz, VCC =3V, Temp=27°C
Gain 8.5 dB Freq=900MHz, VCC =3V, Temp=27°C
Noise Figure 1.9 dB
Input IP3 +6.9 dBm
OP1dB +7.5 dBm
Gain 9.2 dB Freq=1950MHz, VCC =3V, Temp=27°C
Noise Figure 1.7 dB
Input IP3 +8.6 dBm
OP1dB +6.9 dBm
Gain 8.2 dB Freq=2450MHz, VCC=3V, Temp=27°C
Noise Figure 1.7 dB
Input IP3 +10.5 dBm
OP1dB +7.5 dBm
5V Performance
Gain 12.5 dB Freq=300MHz, VCC =5V, Temp=27°C
Gain 10 12 14 dB Freq = 900 MHz, VCC =5V, Temp=27°C
Noise Figure 1.9 dB
Input IP3 +8.4 dBm
OP1dB +8.7 dBm
Gain 9.8 dB Freq=1950MHz, VCC =5V, Temp=27°C
Noise Figure 1.9 dB
Input IP3 +10.0 dBm
OP1dB +8 dBm
Gain 6 8 11 dB Freq=2450MHz, VCC=5V, Temp=27°C
Noise Figure 1.6 dB
Input IP3 +8.0 dBm
OP1dB +6 dBm
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
3 of 8
RF2304
Rev A7 DS060908
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Application Schematic
Pin Function Description Interface Schematic
1GND
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
2GND
Same as pin 1.
3RF IN
DC coupled RF input. A broadband impedance match is produced by inter-
nal shunt resistive feedback. The DC level is approximately 200mV. If a DC
path exists in the connected circuitry, an external DC-blocking capacitor is
required to properly maintain the DC operating point.
4GND
Same as pin 1.
5GND
Same as pin 1.
6RF OUT
RF output. A broadband impedance match is produced by internal shunt
resistive feedback. The DC connection to the power supply is provided
through an external chip inductor having greater than 150Ω reactance at
the operating frequency. An external DC-blocking capacitor is required if
the following circuitry is not DC-blocked.
7 VDD2 Bias control connection. This pin is normally connected to the power sup-
ply, but can be used to switch the amplifier on and off by switching
between power supply voltage and ground. This pin sinks approximately
600μA when connected to VDD, and sources less than 10μA when
grounded.
8NC
No connection.
RF IN
RF OUT
VDD
2
1
4
3
7
8
5
6
100 pF
RF IN
L1
RF Choke
100 pF
1 nF
VDD
4 of 8
RF2304
Rev A7 DS060908
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
Evaluation Board Layout
1.43” x 1.43”
2
1
4
3
7
8
5
6
C1
100 pF
50 Ω μstrip
J1
RF IN C2
100 pF
L1
82 nH 50 Ω μstrip J2
RF OUT
C4
1 nF
C3
1 nF
2304400B
P1-1
NC
GND
P1-1 VCC
P1
1
2
3
5 of 8
RF2304
Rev A7 DS060908
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Typical Characteristics - f=900MHz
Typical Characteristics - VDD=5.0V
0
5
10
15
20
25
3 3.5 4 4.5 5
Vdd (V)
mA
0
3
6
9
12
15
dB, dBm
Gain
Idd
P1dB
NF
0
2
4
6
8
10
12
14
16
18
20
0 500 1000 1500 2000 2500 3000
Frequency (MHz)
Gain (dB)
0
1
2
3
4
5
6
7
8
9
10
Noise Figure (dB)
6 of 8
RF2304
Rev A7 DS060908
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
S-Parameter Conditions:
All plots are taken at ambient temperature=25°C.
NOTE:
All S11 and S22 plots shown were taken from an RF2304 evaluation board with external input and output tuning components
removed and the reference points at the RF IN and RF OUT pins.
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S11 Vcc=3V Swp Max
6GHz
Swp Min
0.01GHz
S11 VCC = 3V
4 GHz
3 GHz
2 GHz
1 GHz
300 MHz
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S22 Vcc=3V Swp Max
6GHz
Swp Min
0.01GHz
S22 VCC = 3V
4 GHz
1 GHz
100 MHz
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S11 Vcc=5V Swp Max
6GHz
Swp Min
0.01GHz
S11 VCC = 5V
4 GHz
3 GHz
2 GHz
1 GHz 100 MHz
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S22 Vcc=5V Swp Max
6GHz
Swp Min
0.01GHz
S22 VCC = 5V
4 GHz
1 GHz
100 MHz
7 of 8
RF2304
Rev A7 DS060908
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Gain versus Temperature
Frequency = 900 MHz
10.2
10.4
10.6
10.8
11.0
11.2
11.4
11.6
11.8
12.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Temperature (°C)
Gain (dB)
Vcc=3V
Vcc=5V
Gain versus Temperature
Frequency = 900 MHz
10.2
10.4
10.6
10.8
11.0
11.2
11.4
11.6
11.8
12.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Temperature (°C)
Gain (dB)
Vcc=3V
Vcc=5V
Gain versus Temperature
Frequency = 900 MHz
10.2
10.4
10.6
10.8
11.0
11.2
11.4
11.6
11.8
12.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Temperature (°C)
Gain (dB)
Vcc=3V
Vcc=5V
Gain versus Temperature
Frequency = 900 MHz
10.2
10.4
10.6
10.8
11.0
11.2
11.4
11.6
11.8
12.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Temperature (°C)
Gain (dB)
Vcc=3V
Vcc=5V
Gain versus Temperature
Frequency = 900 MHz
10.2
10.4
10.6
10.8
11.0
11.2
11.4
11.6
11.8
12.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Temperature (°C)
Gain (dB)
Vcc=3V
Vcc=5V
Gain versus Temperature
Frequency = 900 MHz
10.2
10.4
10.6
10.8
11.0
11.2
11.4
11.6
11.8
12.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Temperature (°C)
Gain (dB)
Vcc=3V
Vcc=5V
8 of 8
RF2304
Rev A7 DS060908
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Gain versus Temperature
Frequency = 900 MHz
10.2
10.4
10.6
10.8
11.0
11.2
11.4
11.6
11.8
12.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Temperature (°C)
Gain (dB)
Vcc=3V
Vcc=5V
Gain versus Temperature
Frequency = 900 MHz
10.2
10.4
10.6
10.8
11.0
11.2
11.4
11.6
11.8
12.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Temperature (°C)
Gain (dB)
Vcc=3V
Vcc=5V
Gain versus Temperature
Frequency = 900 MHz
10.2
10.4
10.6
10.8
11.0
11.2
11.4
11.6
11.8
12.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Temperature (°C)
Gain (dB)
Vcc=3V
Vcc=5V
