MURF1620CTG Switch-mode Power Rectifier These state-of-the-art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features * * * * * * * * * www.onsemi.com Ultrafast 35 Nanosecond Recovery Times 150C Operating Junction Temperature Epoxy Meets UL 94 V-0 @ 0.125 in High Temperature Glass Passivated Junction Low Leakage Specified @ 150C Case Temperature Current Derating @ Both Case and Ambient Temperatures Electrically Isolated. No Isolation Hardware Required. ESD Rating: Human Body Model = 3B (> 8 kV) Machine Model = C (> 400 V) This is a Pb-Free Package* ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS ISOLATED TO-220 CASE 221AH Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 1.9 Grams (Approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 1 2 * Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds 3 MARKING DIAGRAM AYWW U1620G AKA A Y WW U1620 G AKA = Assembly Location = Year = Work Week = Device Code = Pb-Free Package = Diode Polarity ORDERING INFORMATION Device Package Shipping MURF1620CTG TO-220 (Pb-Free) 50 Units / Rail For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2016 July, 2016 - Rev. 11 1 Publication Order Number: MURF1620CT/D MURF1620CTG MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 200 V Average Rectified Forward Current Per Diode, (Rated VR), TC = 150C Total Device IF(AV) A 8 16 Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz), TC = 150C IFM Non-repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM A 16 A 100 Operating Junction and Storage Temperature TJ, Tstg RMS Isolation Voltage (t = 0.3 second, R.H. 30%, TA = 25C) (Note 1) C - 65 to +150 Viso1 V 4500 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Proper strike and creepage distance must be provided. THERMAL CHARACTERISTICS (Per Leg) Characteristic Maximum Thermal Resistance, Junction-to-Case Lead Temperature for Soldering Purposes: 1/8 from the Case for 5 seconds Symbol Value Unit RqJC 4.2 C/W TL 260 C Symbol Value Unit ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic Maximum Instantaneous Forward Voltage (Note 2) (iF = 8.0 A, TC = 150C) (iF = 8.0 A, TC = 25C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 150C) (Rated DC Voltage, TC = 25C) iR Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A/ms) (IF = 0.5 A, iR = 1.0 A, IREC = 0.25 A) trr V 0.895 0.975 mA 250 5.0 ns 35 25 i F , INSTANTANEOUS FORWARD CURRENT (AMPS) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. 10 k 100 50 I R, REVERSE CURRENT (A) m 1.0 k 400 20 10 5.0 2.0 TJ = 100C 1.0 25C 10 TJ = 100C 2.0 1.0 0.4 25C 0.1 0.04 0.3 0.1 0.2 100 40 0.4 0.6 0.8 1.0 vF, INSTANTANEOUS VOLTAGE (VOLTS) 1.2 0.01 0 Figure 1. Typical Forward Voltage, Per Leg 20 40 80 60 100 120 140 VR, REVERSE VOLTAGE (VOLTS) 160 180 200 Figure 2. Typical Reverse Current, Per Leg* www.onsemi.com 2 MURF1620CTG PACKAGE DIMENSIONS TO-220 FULLPACK, 3-LEAD CASE 221AH ISSUE F A B E A P E/2 0.14 Q D M B A H1 M A1 C NOTE 3 1 2 3 L L1 3X 3X SEATING PLANE c b b2 0.25 M B A M C A2 e SIDE VIEW FRONT VIEW SECTION D-D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR UNCONTROLLED IN THIS AREA. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY. 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00. 6. CONTOURS AND FEATURES OF THE MOLDED PACKAGE BODY MAY VARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1 AND H1 FOR MANUFACTURING PURPOSES. DIM A A1 A2 b b2 c D E e H1 L L1 P Q MILLIMETERS MIN MAX 4.30 4.70 2.50 2.90 2.50 2.90 0.54 0.84 1.10 1.40 0.49 0.79 14.70 15.30 9.70 10.30 2.54 BSC 6.60 7.10 12.50 14.73 --2.80 3.00 3.40 2.80 3.20 A NOTE 6 NOTE 6 H1 D D A SECTION A-A ALTERNATE CONSTRUCTION ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. 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