Symbol
10 Sec Steady State
V
DS
V
GS
-12 -10
-9 -8
I
DM
I
AR
E
AR
3.1 1.7
2.0 1.1
T
J
, T
STG
Parameter
Symbol
Typ
Max
t ≤ 10s 31 40
Steady State 59 75
Steady State R
θJL
16 24
Repetitive avalanche energy L=0.3mH
G
mJ
-120 A
-28
118
Pulsed Drain Current
B
Avalanche Current
G
Continuous Drain
Current
A
Power Dissipation
A
T
A
=25°C
Junction and Storage Temperature Range
T
A
=70°C
UnitsParameter
T
A
=25°C
T
A
=70°C
V
V
I
D
Gate-Source Voltage
Drain-Source Voltage -40
Absolute Maximum Ratings T
J
=25°C unless otherwise noted
P
D
Maximum Junction-to-Lead
C
°C/W
Thermal Characteristics Units
Maximum Junction-to-Ambient
A
°C/W
Maximum Junction-to-Ambient
A
W
±20
°C/W
R
θJA
°C-55 to 150
AO4485
40V P-Channel MOSFET
Product Summary
DS
(V) = -40V
I
D
= -10A (V
GS
= -10V)
R
DS(ON)
< 15mΩ (V
GS
= -10V)
R
DS(ON)
< 20mΩ (V
GS
= -4.5V)
100% UIS Tested
100% Rg Tested
General Description
The AO4485 uses advanced trench technology to
provide excellent R
DS(ON)
with low gate charge. This
device is suitable for use as a DC-DC converter
application.
SOIC-8
Top View Bottom View
D
D
D
D
S
S
S
G
G
D
S
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4485
Symbol Min Typ Max Units
BV
DSS
-40 V
-1
T
J
= 55°C -5
I
GSS
±100 nA
V
GS(th)
-1.7 -1.9 -2.5 V
I
D(ON)
-120 A
12.5 15
T
J
=125°C 19 23
16 20
g
FS
25 S
V
SD
-0.7 -1 V
I
S
-3 A
C
iss
2500 3000 pF
C
oss
260 pF
C
rss
180 pF
R
g
2.5 4 6 Ω
Q
g
(10V) 42 55 nC
Q
g
(4.5V) 18.6 nC
Q
gs
7 nC
Q
gd
8.6 nC
t
D(on)
9.4 ns
t
r
20 ns
t
D(off)
55 ns
t
f
30 ns
t
rr
38 49 ns
Q
rr
47 nC
0
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
On state drain current
I
D
= -250µA, V
GS
= 0V
V
GS
= -10V, V
DS
= -5V
V
DS
= -40V, V
GS
= 0V
V
DS
= 0V, V
GS
= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-10A, dI/dt=100A/µs
V
GS
= -10V, I
D
= -10A
Reverse Transfer Capacitance
I
F
=-10A, dI/dt=100A/µs
Static Drain-Source On-Resistance
Diode Forward Voltage
V
GS
= -4.5V, I
D
= -8A mΩ
Gate Threshold Voltage V
DS
= V
GS
I
D
= -250µA
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
I
DSS
R
DS(ON)
Drain-Source Breakdown Voltage
Turn-Off DelayTime V
GS
=-10V, V
DS
=-20V,
R
L
= 2Ω, R
GEN
=3Ω
Turn-Off Fall Time
Turn-On DelayTime
Turn-On Rise Time
Gate Source Charge
Gate Drain Charge
µA
Total Gate Charge
V
GS
=-10V, V
DS
=-20V, I
D
=-10A
Output Capacitance
I
S
= -1A,V
GS
= 0V
V
DS
= -5V, I
D
= -10A
Forward Transconductance
Gate resistance
SWITCHING PARAMETERS
DYNAMIC PARAMETERS
Maximum Body-Diode Continuous Current
Total Gate Charge
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=0V, V
DS
=-20V, f=1MHz
Input Capacitance
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA = 25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C.
Rev1: Nov. 2010
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4485
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
I
F
=-6.5A, dI/dt=100A/µs
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0
20
40
60
80
100
120
0 1 2 3 4 5
-V
DS
(Volts)
Figure 1: On-Region Characteristics
I
D
(A)
-4V
-4.5V
-10V
-3.5V
0
20
40
60
80
100
1.5 2 2.5 3 3.5 4 4.5 5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
25°C
125°C
V
DS
= -5V
10
12
14
16
18
20
0 4 8 12 16 20
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS(ON)
(mΩ
Ω
Ω
Ω)
V
GS
= -10V
V
GS
= -4.5V
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-I
S
(A)
25°C
125°C
0.8
1.0
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Normalized On-Resistance
10
15
20
25
30
35
2 4 6 8 10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS(ON)
(mΩ
Ω
Ω
Ω)
I
D
= -10A
25°C
125°C
V
GS
= -3V
V
GS
= -10V
I
D
= -10A
V
GS
= -4.5V
I
D
= -7.5A
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4485
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
I
F
=-6.5A, dI/dt=100A/µs
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0
2
4
6
8
10
0 5 10 15 20 25 30 35 40 45
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
GS
(Volts)
0
500
1000
1500
2000
2500
3000
3500
4000
0 10 20 30 40
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
C
oss
C
rss
1
10
100
1000
0.0001 0.01 1 100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note E)
Power (W)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Z
θ
θ
θ
θJA
Normalized Transient
Thermal Resistance
0.01
0.1
1
10
100
1000
0.1 1 10 100
-V
DS
(Volts)
-I
D
(Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
R
DS(ON)
limited
T
J(Max)
=150°C
T
A
=25°C
100
µ
s
10ms
1ms
100ms
10s
10
µ
s
DC
V
DS
= 15V
I
D
= -10A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=75°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150°C
T
A
=25°C
Alpha & Omega Semiconductor, Ltd. www.aosmd.com