Transys Electronics L I M I T E D TO-126 Plastic-Encapsulated Transistors BD233/235/237 TRANSISTOR (NPN) TO-126 FEATURES 1. EMITTER Power dissipation PCM: 1.25 W (Tamb=25) 2. COLLECTOR Collector current 2 A ICM: Collector-base voltage BD233 : 45 V V(BR)CBO: BD235: 60 V BD237: 100 V Operating and storage junction temperature range 3. BASE 123 TJ : 150 Tstg: -65 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage unless otherwise specified) Symbol Test conditions V(BR)CBO Ic= 100A, IE=0 V(BR)CEO Ic= 10mA, IB=0 Collector cut-off current V(BR)EBO ICBO V IE= 100A, IC=0 5 V VCB= 60V, IE=0 100 A 1 mA 0.6 V VCB= 100V, IE=0 BD237 Emitter cut-off current 60 VCB= 45V, IE=0 BD233 BD235 V 80 BD237 Emitter-base breakdown voltage 60 45 BD233 BD235 UNIT 100 BD237 Collector-emitter breakdown voltage MAX 45 BD233 BD235 MIN IEBO VEB= 5V, IC=0 HFE(1) VCE= 2V, IC=150mA 40 HFE(2) VCE=2V, IC= 1A 25 VCE(sat) IC=1A, IB= 100m A DC current gain Collector-emitter saturation voltage Transition frequency fT VCE=10V, Ic=250mA f =10MHz 3 MHz