TO-126
1. EMITTER
2. COLLECTOR
3. BASE
TO-126 Plastic-Encapsulated Transistors
BD233/235/237 TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM: 1.25 W (Tamb=25℃)
Collector current
ICM: 2 A
Collector-base voltage
V(BR)CBO: BD233 : 45 V
BD235: 60 V
BD237: 100 V
Operating and storage junction tempe rature range
TJ : 150℃
Tstg: -65℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage BD233
BD235
BD237
V(BR)CBO Ic= 100µA, IE=0
45
60
100
V
Collector-emitter breakdown voltage BD233
BD235
BD237
V(BR)CEO Ic= 10mA, IB=0
45
60
80
V
E mitter-base breakdown vol t age V(BR)EBO IE= 100µA, IC=0 5 V
Collector cut-off current BD233
BD235
BD237
ICBO
VCB= 45V, IE=0
VCB= 60V, IE=0
VCB= 100V, I E=0
100 µA
Emitter cut -o f f c u rrent IEBO V
EB= 5V, I C=0 1 mA
HFE(1) V
CE= 2V, IC=150mA 40
DC current gain HFE(2) V
CE=2V, IC= 1A 25
Collector-emitter saturation vol tage VCE(sat) I
C=1A, IB= 100m A 0.6 V
Transition frequency fT VCE=10V, Ic=2 50 mA
f =10MHz 3 MHz
1 2 3
Transys
Electronics
LI
M
ITE
D
