To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
Is Now Part of
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, afliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Afrmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
May 2016
FDWS86368_F085 N-Channel PowerTrench® MOSFET
©2016 Fairchild Semiconductor Corporation
FDWS86368_F085 Rev. 1.0
www.fairchildsemi.com1
FDWS86368_F085
N-Channel PowerTrench® MOSFET
80 V, 80 A, 4.5 mΩ
Features
Typical RDS(on) = 3.7 mΩ at VGS = 10V, ID = 80 A
Typical Qg(tot) = 57 nC at VGS = 10V, ID = 80 A
UIS Capability
RoHS Compliant
Qualified to AEC Q101
Wettable flanks for automatic optical inspection (AOI)
Applications
Automotive Engine Control
PowerTrain Management
Solenoid and Motor Drivers
Integrated Starter/Alternator
Primary Switch for 12V Systems
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol Parameter Ratings Units
VDSS Drain-to-Source Voltage 80 V
VGS Gate-to-Source Voltage ±20 V
ID
Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C 80 A
Pulsed Drain Current TC = 25°C See Figure 4
EAS Single Pulse Avalanche Energy (Note 2) 82 mJ
PD
Power Dissipation 214 W
Derate Above 25oC1.43W/
oC
TJ, TSTG Operating and Storage Temperature -55 to + 175 oC
RθJC Thermal Resistance, Junction to Case 0.7 oC/W
RθJA Maximum Thermal Resistance, Junction to Ambient (Note 3) 50 oC/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDWS86368 FDWS86368_F085 Power56 13” 12mm 3000units
Notes:
1: Current is limited by bondwire configuration.
2: Starting TJ = 25°C, L = 40uH, IAS = 64A, VDD = 80V during inductor charging and VDD = 0V during time in avalanche.
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating
presented here is based on mounting on a 1 in2 pad of 2oz copper.
Forcurrentpackagedrawing,pleaserefertotheFairchildweb
siteathttps://www.fairchildsemi.com/packagedrawings/PQ/
PQFN08M.pdf
FDWS86368_F085 N-Channel PowerTrench® MOSFET
www.fairchildsemi.com2©2016 Fairchild Semiconductor Corporation
FDWS86368_F085 Rev. 1.0
Electrical Characteristics TJ = 25°C unless otherwise noted.
Off Characteristics
On Characteristics
Dynamic Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-to-Source Breakdown Voltage ID = 250μA, VGS = 0V 80 - - V
IDSS Drain-to-Source Leakage Current VDS
= 8 0 V T J = 25oC --1μA
VGS = 0V TJ = 175oC (Note 4) - - 1 mA
IGSS Gate-to-Source Leakage Current VGS = ±20V - - ±100 nA
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250μA 2.0 3.0 4.0 V
RDS(on) Drain to Source On Resistance ID = 80A,
VGS= 10V
TJ = 25oC -3.74.5mΩ
TJ = 175oC (Note 4) - 7.4 9.0 mΩ
Ciss Input Capacitance VDS = 40V, VGS = 0V,
f = 1MHz
- 4350 - pF
Coss Output Capacitance - 636 - pF
Crss Reverse Transfer Capacitance - 20 - pF
RgGate Resistance f = 1MHz - 2.5 - Ω
Qg(ToT) Total Gate Charge VGS = 0 to 10V VDD = 64V
ID = 80A
-5775nC
Qg(th) Threshold Gate Charge VGS = 0 to 2V - 8 - nC
Qgs Gate-to-Source Gate Charge -23-nC
Qgd Gate-to-Drain “Miller“ Charge - 11 - nC
Switching Characteristics
Drain-Source Diode Characteristics
Note:
4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
ton Turn-On Time
VDD = 40V, ID = 80A,
VGS = 10V, RGEN = 6Ω
- - 60 ns
td(on) Turn-On Delay - 23 - ns
trRise Time - 22 - ns
td(off) Turn-Off Delay - 32 - ns
tfFall Time - 13 - ns
toff Turn-Off Time - - 59 ns
VSD Source-to-Drain Diode Voltage ISD =80A, VGS = 0V - - 1.25 V
ISD = 40A, VGS = 0V - - 1.2 V
trr Reverse-Recovery Time IF = 80A, dISD/dt = 100A/μs
VDD = 64V
-5875ns
Qrr Reverse-Recovery Charge - 49 67 nC
FDWS86368_F085 N-Channel PowerTrench® MOSFET
www.fairchildsemi.com3©2016 Fairchild Semiconductor Corporation
FDWS86368_F085 Rev. 1.0
Typical Characteristics
Figure 1. Normalized Power Dissipation vs. Case
Temperature
0 25 50 75 100 125 150 175
0.0
0.2
0.4
0.6
0.8
1.0
1.2
POWER DISSIPATION MULTIPLIER
TC, CASE TEMPERATURE(oC)
Figure 2. Maximum Continuous Drain Current vs.
Case Temperature
25 50 75 100 125 150 175 200
0
25
50
75
100
125
150
175
200
CURRENT LIMITED
BY SILICON
CURRENT LIMITED
BY PACKAGE
VGS = 10V
ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE(oC)
Figure 3.
10-5 10-4 10-3 10-2 10-1 100101
0.01
0.1
1
SINGLE PULSE
D = 0.50
0.20
0.10
0.05
0.02
0.01
NORMALIZED THERMAL
IMPEDANCE, ZθJC
t, RECTANGULAR PULSE DURATION(s)
DUTY CYCLE - DESCENDING ORDER
2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
PDM
t1
t2
Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
10-5 10-4 10-3 10-2 10-1 100101
10
100
1000
VGS = 10V
SINGLE PULSE
IDM, PEAK CURRENT (A)
t, RECTANGULAR PULSE DURATION(s)
T
C
= 25
o
C
I = I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
FDWS86368_F085 N-Channel PowerTrench® MOSFET
www.fairchildsemi.com4©2016 Fairchild Semiconductor Corporation
FDWS86368_F085 Rev. 1.0
Figure 5.
0.1 1 10 100 500
0.01
0.1
1
10
100
1000
100us
1ms
10ms
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
100ms
Forward Bias Safe Operating Area
0.001 0.01 0.1 1 10 100 1000
1
10
100
500
STARTING TJ = 150oC
STARTING TJ = 25oC
IAS, AVALANCHE CURRENT (A)
tAV, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7.
23456789
0
50
100
150
200
250
300
TJ = -55oC
TJ = 25oC
TJ = 175oC
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VDD = 5V
ID, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
Transfer Characteristics Figure 8.
0.00.20.40.60.81.01.2
0.1
1
10
100
300
TJ = 25 oC
TJ = 175 oC
VGS = 0 V
IS, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Forward Diode Characteristics
Figure 9.
012345
0
50
100
150
200
250
300
5V
VGS
15V Top
10V
8V
7V
6V
5.5V
5V Bottom
80μs PULSE WIDTH
Tj=25oC
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Saturation Characteristics Figure 10.
012345
0
50
100
150
200
250
300
5V
VGS
15V Top
10V
8V
7V
6V
5.5V
5V Bottom
80μs PULSE WIDTH
Tj=175oC
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Saturation Characteristics
Typical Characteristics
FDWS86368_F085 N-Channel PowerTrench® MOSFET
www.fairchildsemi.com5©2016 Fairchild Semiconductor Corporation
FDWS86368_F085 Rev. 1.0
Figure 11.
45678910
0
10
20
30
40
ID = 80A PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
rDS(on), DRAIN TO SOURCE
ON-RESISTANCE (mΩ)
VGS, GATE TO SOURCE VOLTAGE (V)
TJ = 25oC
TJ = 175oC
RDSON vs. Gate Voltage Figure 12. Normalized RDSON vs. Junction
Temperature
-80 -40 0 40 80 120 160 200
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
ID = 80A
VGS = 10V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTION TEMPERATURE(oC)
Figure 13.
-80 -40 0 40 80 120 160 200
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VGS = VDS
ID = 250μA
NORMALIZED GATE
THRESHOLD VOLTAGE
TJ, JUNCTION TEMPERATURE(oC)
Normalized Gate Threshold Voltage vs.
Temperature
Figure 14.
-80 -40 0 40 80 120 160 200
0.90
0.95
1.00
1.05
1.10
ID = 5mA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
TJ, JUNCTION TEMPERATURE (oC)
Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
Figure 15.
0.1 1 10 100
1
10
100
1000
10000
f = 1MHz
VGS = 0V
Crss
Coss
Ciss
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Capacitance vs. Drain to Source
Voltage
Figure 16.
0 102030405060
0
2
4
6
8
10
VDD = 40V
VDD =32V
ID = 80A
VDD = 48V
Qg, GATE CHARGE(nC)
VGS, GATE TO SOURCE VOLTAGE(V)
Gate Charge vs. Gate to Source
Voltage
Typical Characteristics
FDWS86368_F085 N-Channel PowerTrench® MOSFET
www.fairchildsemi.com6©2016 Fairchild Semiconductor Corporation
FDWS86368_F085 Rev. 1.0
Detailed Package Outline Drawings
www.fairchildsemi.com
7
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
AccuPower™
AttitudeEngine™
Awinda®
AX-CAP®*
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT
CTL™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
ESBC™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FastvCore™
FETBench™
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
GreenBridge™
Green FPS™
Green FPS™ e-Series™
Gmax
GTO™
IntelliMAX™
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
MotionGrid®
MTi®
MTx®
MVN®
mWSaver®
OptoHiT™
OPTOLOGIC®
OPTOPLANAR®
Power Supply WebDesigner
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM®
STEALTH™
SuperFET®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS®
SyncFET™
Sync-Lock™
®*
TinyBoost®
TinyBuck®
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
TRUECURRENT®*
μSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
Xsens™
仙童 ®
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
®
Rev. I77
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. TO OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR
WEBSITE AT HTTP://WWW.FAIRCHILDSEMI.COM. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF
ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE
WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
tm
®
AUTHORIZED USE
Unless otherwise specified in this data sheet, this product is a standard commercial product and is not intended for use in applications that require
extraordinary levels of quality and reliability. This product may not be used in the following applications, unless specifically approved in writing by a Fairchild
officer: (1) automotive or other transportation, (2) military/aerospace, (3) any safety critical application – including life critical medical equipment – where the
failure of the Fairchild product reasonably would be expected to result in personal injury, death or property damage. Customers use of this product is subject
to agreement of this Authorized Use policy. In the event of an unauthorized use of Fairchild’s product, Fairchild accepts no liability in the event of product
failure. In other respects, this product shall be subject to Fairchild’s Worldwide Terms and Conditions of Sale, unless a separate agreement has been signed
by both Parties.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website,
www.fairchildsemi.com, under Terms of Use
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of
their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance,
failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers
from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized
Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handling and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
©2016 Fairchild Semiconductor Corporation
FDWS86368_F085 Rev. 1.0
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81358171050
www.onsemi.com
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC