DATA SH EET
Product specification
Supersedes data of 1998 Mar 06 1998 Nov 25
DISCRETE SEMICONDUCTORS
BLS2731-20
Microwave power transistor
M3D324
1998 Nov 25 2
Philips Semiconductors Product specification
Microwave power transistor BLS2731-20
FEATURES
•Suitable for short and medium pulse applications
•Internal input and output matching networks for an easy
circuit design
•Emitter ballasting resistors improve ruggedness
•Gold metallization ensures excellent reliability
•Interdigitated emitter-base structure provides high
emitter efficiency
•Multicell geometry improves power sharing and reduces
thermal resistance.
APPLICATIONS
•Common base class-C pulsed power amplifiers for radar
applications in the 2.7 to 3.1 GHz band.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a 2-lead rectangular flange package with a ceramic cap
(SOT445C) with the common base connected to the
flange.
PINNING - SOT445C
PIN DESCRIPTION
1 collector
2 emitter
3 base connected to flange
Fig.1 Simplified outline.
handbook, halfpage
MBK132
Top view
1
3
2
QUICK REFERENCE DATA
RF performance at Th=25°C in a common base class-C test circuit.
MODE OF OPERATION f
(GHz) VCB
(V) PL
(W) Gp
(dB) ηC
(%)
Pulsed class-C 2.7 to 3.1 40 25 typ. 10 typ. 40
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1998 Nov 25 3
Philips Semiconductors Product specification
Microwave power transistor BLS2731-20
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
Tj=25°C unless otherwise specified.
APPLICATION INFORMATION
RF performance at Th=25°C in a common-base test circuit.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −75 V
VCES collector-emitter voltage RBE =0 −75 V
VEBO emitter-base voltage open collector −2V
I
CM peak collector current tp≤100 µs; δ≤10% −3A
P
tot total power dissipation tp= 100 µs; δ= 10%;
Tmb =25°C−270 W
Tstg storage temperature −65 +200 °C
Tjoperating junction temperature −200 °C
Tsld soldering temperature up to 0.2 mm from ceramic cap;
t≤10 s −235 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Zth j-h thermal impedance from junction to heatsink tp= 100 µs; δ= 10%; note 1 0.65 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)CBO collector-base breakdown voltage IC= 5 mA; open emitter 75 −−V
V
(BR)CES collector-emitter breakdown
voltage IC= 5 mA; VBE =0 75 −−V
I
CBO collector leakage current VCB = 40 V; IE=0 −−0.5 mA
ICES collector leakage current VCE = 40 V; VBE =0 −−0.5 mA
IEBO emitter leakage current VEB = 1.5 V; IC=0 −−0.1 mA
hFE DC current gain VCB =5V; I
C= 0.5 A 40 −−
C
ccollector capacitance (die only) VCE =1V; I
E=i
e= 0; f = 1 MHz −10 −pF
MODE OF OPERATION f
(GHz) VCE
(V) PL
(W) Gp
(dB) ηC
(%)
Class-C; tp= 100 µs; δ= 10% 2.7 to 3.1 40 ≥20
typ. 25 ≥9
typ. 10 ≥35
typ. 40
1998 Nov 25 4
Philips Semiconductors Product specification
Microwave power transistor BLS2731-20
VCB = 40 V; class-C; tp= 100 µs; δ= 10%.
(1) f = 3.1 GHz.
(2) f = 2.7 GHz.
(3) f = 2.9 GHz.
Fig.2 Load power as a function of drive power;
typical values.
handbook, halfpage
0 2.5
MGR731
25
0
20
15
10
5
PL
(W)
PD (W)
0.5 1 1.5 2
(2) (3)
(1)
Fig.3 Power gain as function of frequency;
typical values.
VCB = 40 V; class-C; PL= 20 W; tp= 100 µs; δ= 10%.
handbook, halfpage
16
12
4
0
8
MGR732
2.7 2.8 2.9 3.13.0 f (GHz)
Gp
(dB)
Fig.4 Input impedance as function of frequency
(series components); typical values.
VCB = 40 V; class-C; PL=20W.
handbook, halfpage
25
0
20
MGR733
15
10
5
2.7 2.8 2.9 3.13.0
Zi
(Ω)
f (GHz)
ri
xi
Fig.5 Load impedance as function of frequency
(series components); typical values.
VCB = 40 V; class-C; PL=20W.
handbook, halfpage
2.7 2.8 2.9 3.1
20
−10
10
15
MGR734
3.0
5
0
−5
ZL
(Ω)
f (GHz)
RL
XL
1998 Nov 25 5
Philips Semiconductors Product specification
Microwave power transistor BLS2731-20
List of components
Notes
1. American Technical Ceramics type 200A or capacitor of same quality.
2. American Technical Ceramics type 100A or capacitor of same quality.
3. American Technical Ceramics type 700A or capacitor of same quality.
COMPONENT DESCRIPTION VALUE
C1 multilayer ceramic chip capacitor; note 1 1 nF
C2 multilayer ceramic chip capacitor; note 2 10 pF
C3 multilayer ceramic chip capacitor; note 3 150 pF
C4 Tekelec trimmer type 37281SL 0.4 to 2.5 pF
Fig.6 Component layout for 2.7 to 3.1 GHz class-C test circuit.
Dimensions in mm.
The components are located on one side of the copper-clad printed circuit board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
The striplines are on double-clad printed-circuit board with Duroid dielectric (εr= 2.2); thickness = 0.38 mm.
handbook, full pagewidth
40
30 30
MGR730
C4
C1
C2
C3
input
50 Ωoutput
50 Ω
1998 Nov 25 6
Philips Semiconductors Product specification
Microwave power transistor BLS2731-20
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT445C 97-05-23
0 5 10 mm
scale
Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT445C
0.15
0.09
3.15
2.95 5.31
5.01
8.13
7.87 4.20
3.93 1.82
1.22 15.84
14.64
DIMENSIONS (mm are the original dimensions)
3.35
3.05
5.57
4.70 3.33
3.03
D
D2
D1
q
U1
1
3
2
A
U2E1
E2E
p
b
H
Q
F
c
UNIT Q
cD E
2
4.25
3.95
E1
7.65
7.35
D1
8.15
7.85
D2EFHp q
mm
b
14.22 20.47
20.17
U2
U1
5.18
4.98 0.51
w1
1.02
w2
A
M
C
C
Aw1
w2
AB
M
B
1998 Nov 25 7
Philips Semiconductors Product specification
Microwave power transistor BLS2731-20
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Internet: http://www.semiconductors.philips.com
Philips Semiconductors – a worldwide company
© Philips Electronics N.V. 1998 SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
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Printed in The Netherlands 125108/00/04/pp8 Date of release: 1998 Nov 25 Document order number: 9397 750 04722
