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Page <1> V1.012/09/14
NPN High Voltage Amplifier
Features:
• Epitaxial planar die construction
• Idealformediumpoweramplicationand
switching
Applications:
• NPNHighvoltageamplier
Parameter Symbol Value Units
Collector-Base Voltage VCBO 300
VCollector-Emitter Voltage VCEO 300
Emitter-Base Voltage VEBO 6
Collector Current (DC) IC0.2 A
Collector Dissipation PC0.35 W
Junction and Storage Temperature Tj, Tstg -55 to +150 °C
Maximum Rating @ Ta = 25°C unless otherwise specied
Electrical Characteristics @ Ta = 25°C unless otherwise specied
Parameter Symbol Test conditions Min. Max. Unit
Collector-Base Breakdown Voltage V(BR)CBO IC =100μA,IE = 0 300 -
V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 300 -
Emitter-Base Breakdown Voltage V(BR)EBO IE =100μA,IC = 0 6 -
Collector Cut-Off Current ICBO IE = 0, VCB = 200V -
0.1 μA
Emitter Cut-Off Current IEBO IC = 0, VEB = 6V -
DC Current Gain hFE
VCE = 10V, IC = 1mA
VCE = 10V, IC = 10mA
VCE = 10V, IC = 30mA
25
40
40
-
-
-
SOT-23