©2003 Fairchild Semiconductor Corporation
www.fairchildsemi.com
Rev.1.0.3
Features
• Fixed Frequency
• Internal Burst Mode Contr ol ler for Stand- by Mode
• Pulse By Pulse Over Current Limiting
• Over Current Protection(Auto Restart Mode)
• Over Voltage Protection (Auto Restart Mode)
• Over Load Protection(Auto Restart Mode)
• Internal Thermal Shutdown Function(Latch Mode)
• Unde r Voltage Lo ck ou t
• Internal High Voltage Sense FET
•Soft Start
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of
high voltage power SenseFET and current mode PWM IC.
Included PWM controller features integrated fixed oscillator,
under voltage lock out, leading edge blanking, optimized gate
turn-on/turn-off driver, thermal shut down protection, over
voltage protection, and temperature compensated precision
current sources for loop compensation and fault protection
circuitry. compared to discrete MOSFET and controller or
R
CC
switching converter solution, a Fairchild Power
Switch(FPS) can reduce total component count, design size,
and weight and at the same time increase effic iency,
productivity, and system reliability. It has a basic platform
well suited for cost effective LCD monitor power supply.
TO-220F-5L
1
1. Drain 2. GND 3. VCC
4. Feedback 5. S oftStart
Internal Block Diagram
S
R
Q
S
R
QS
R
QTSD
(Tj=160 ℃)
Ifb
1
11
13
33
3
5
55
5
4
44
4
2
22
2
Vref
Rsenese
2.5R
R
Vref
Internal
Bias Vref
UVLO
Ron
Roff
PWM
OCL
Burst mode
controller
Filter
(130nsec)
Power-on
Reset
(Vcc=6.5V)
UVLO Reset
(Vcc=9V)
OLP
OVP
Vth=7.5V
Vcc
Vth=33V
Vth=2V
Vfb Offset
Idelay
Vcc
Vfb
Vth=1V
Vcc
Vth=11V/12V
OSC
Vref
Drain
V
CC
GND
SoftStart
Feedbock
FS6M12653RTC
Fairchil d Power Swi tch(FPS)
FS6M12653RTC
2
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Notes:
1. Repetitive rating: Pulse width limited by maximum junction temperature
2. L=81mH, starting Tj=25°C
3. L=13uH, starting Tj=25 °C
Characteristic Symbol Value Unit
Drain-Gate Voltage (R
GS
=1MΩ)V
DGR
650 V
Gate-Source (GND) Voltage V
GS
±30 V
Drain Current Pulsed
(1)
I
DM
21.2 A
DC
Continuous Drain Current (Tc = 25°C) I
D
5.3 A
DC
Continuous Drain Current (T
C
=100°C) I
D
3.4 A
DC
Single Pulsed Avalanche Current
(3)
(Energy
(2)
)I
AS
(E
AS
) 27(960) A(mJ)
Maximum Supply Voltage V
CC, MAX
35 V
Input Voltage Range V
FB
-0.3 to V
CC
V
V
SS
-0.3 to 10 V
Total Power Dissipation P
D
(Watt H/S) 50 W
Darting 0.4 W/°C
Operating Junction Temperature T
j
+150 °C
Operating Ambient Temperature T
A
-25 to +85 °C
Storage Temperature Range T
STG
-55 to +150 °C
FS6M12653RTC
3
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Note:
1. Pulse test : Pulse width ≤ 300 µS, duty 2%
2.
Parameter Symbol Condition Min. Typ. Max. Unit
Drain-Source Breakdown Voltage BV
DSS
V
GS
=0V, I
D
=250µA 650 - - V
Zero Gate Voltage Drain Current I
DSS
V
DS
=650V, V
GS
=0V - - 200 µA
V
DS
=520V
V
GS
=0V, T
C
=125°C- - 300 µA
Static Drain-Source On Resistance
(1)
R
DS(ON)
V
GS
=10V, I
D
=1.8A - 0.73 0.9
Ω
Forward Transconductance
(2)
gfs V
DS
=50V, I
D
=1.8A - - - S
Input Capacitance Ciss V
GS
=0V, V
DS
=25V,
f = 1MHz
- 1820 - pFOutput Capacitance Coss - 185 -
Reverse Transfer Capacitance Crss - 32 -
Turn On Delay Time td(on) V
DD
=325V, I
D
=6.5A
(MOSFET switching
time are essentially
independent of
operating temperature)
-38-
nS
Rise Time tr - 120 -
Turn Off Delay Time td(off) - 200 -
Fall Time tf - 100 -
Total Gate Charge
(Gate-Source+Gate-Drain) Qg V
GS
=10V, I
D
=6.5A,
V
DS
=520V (MOSFET
Switching time are
Essentially independent of
Operating temperature)
-60-
nC
Gate-Source Charge Qgs - 10 -
Gate-Drain (Miller) Charge Qgd - 30 -
S1
R
----=
FS6M12653RTC
4
Electrical Characteristics
(Continued)
(Ta=25°C unless otherwise specified)
Notes:
1. These parameters are the current flowing in the Control IC.
2. These parameters, although guaranteed at the design, are not 100% tested in production.
3. These parameters, although guaranteed, are tested in EDS(wafer test) process.
4. These parameters indicate Inductor current.
Parameter Symbol Condition Min. Typ. Max. Unit
UVLO SECTION
Start Threshold Voltage V
START
V
FB
= GND 14 15 16 V
Stop Threshold Voltage V
STOP
V
FB
= GND 8 9 10 V
OSCILLATOR SECTION
Initial Frequency F
OSC
-637077kHz
Voltage Stability F
STABLE
12V ≤ V
CC
≤ 23V 0 1 3 %
Temperature Stability (2) ∆F
OSC
-25°C ≤ Ta ≤ 85°C0±5±10%
Maximum Duty Cycle D
MAX
-758085%
Minimum Duty Cycle D
MIN
---0%
FEEDBACK SECTION
Feedback Source Current I
FB
V
FB
= GND 0.7 0.9 1.1 mA
Shutdown Feedback Voltage V
SD
V
FB
≥ 6.9V 6.9 7.5 8.1 V
Shutdown Delay Current I
DELAY
V
FB
= 5V 3.2 4.0 4.8 µA
SOFTSTART SECTION
Softstart Voltage V
SS
V
FB
= 2 4.7 5.0 5.3 V
Softstart Current I
SS
V
SS
= V 0.8 1.0 1.2 mA
BURST MODE SECTION
Burst Mode Low Threshold Voltage V
BURL
V
FB
= 0V 10.4 11.0 11.6 V
Burst Mode High Threshold Voltage V
BURH
V
FB
= 0V 11.4 12.0 12.6 V
Burst Mode Enable Feedback Voltage V
BEN
V
CC
= 10.5V 0.7 1.0 1.3 V
Burst Mode Peak Current Limit (4) I
BURPK
V
CC
= 10.5V, V
FB
= 0V 0.46 0.6 0.74 A
Burst Mode Frequency F
BUR
V
CC
= 10.5V, V
FB
= 0V 63 70 77 kHz
CURRENT LIMIT(SELF-PROTECTION)SECTION
Peak Current Limit (4) I
OVER
- 2.82 3.2 3.58 A
PROTECTION SECTION
Over Voltage Protection V
OVP
V
CC
≥ 29V 29 33 37 V
Over Current Latch Voltage (3) V
OCL
- 1.8 2.0 2.2 V
Thermal Shutdown Temp (2) T
SD
- 140 160 - °C
TOTAL DEVICE SECTION
Start Up Current I
START
V
FB
= GND, V
CC
= 14V - 0.1 0.17 mA
Operating Supply Current (1) I
OP
V
FB
= GND, V
CC
= 16V -1015mAI
OP(MIN)
V
FB
= GND, V
CC
= 12V
I
OP(MAX)
V
FB
= GND, V
CC
= 30V
FS6M12653RTC
5
Typical Performance Characteristics
-25 0 25 50 75 100 125 150
0.050
0.075
0.100
0.125
0.150 [mA]
Start Up Current vs. Temp
Temp
-25 0 25 50 75 100 125 150
9.0
9.5
10.0
10.5
11.0 [mA]
Operating Current vs. Temp
Temp
-25 0 25 50 75 100 125 150
14.0
14.5
15.0
15.5
16.0 [V]
Start Threshold Voltage vs. Temp
Temp
-25 0 25 50 75 100 125 150
8.0
8.5
9.0
9.5
10.0 [V]
Stop Threshold Voltage vs. Temp
Temp
-25 0 25 50 75 100 125 150
64
66
68
70
72
74
76 [KHz]
Initia l Freqency vs. Temp
Temp
-25 0 25 50 75 100 125 150
79.0
79.5
80.0
80.5
81.0 [%]
Maximum Duty vs. Temp
Temp
Figure 1. Start Up Current vs. Temp Figure 2. Operating Current vs. Temp
Figure 3. Start Threshold Voltage vs. Temp Figure 4. Stop Th reshold Voltage vs. Temp
Figure 5. Initial Freqency vs. Temp F igure 6. Max imum Duty vs. Temp
FS6M12653RTC
6
Typical Performance Characteristics
(Continued)
-25 0 25 50 75 100 125 150
0.20
0.25
0.30
0.35
0.40
0.45 [V]
Feedback Offset Voltage vs. Temp
Temp
-25 0 25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1 [mA]
Feedback Source Current vs. Temp
Temp
-25 0 25 50 75 100 125 150
3.2
3.6
4.0
4.4
4.8 [uA]
ShutDo wn Delay Cu rren t v s. Temp
Temp
-25 0 25 50 75 100 125 150
7.40
7.45
7.50
7.55
7.60
[V]
ShutDown Feedback Voltage vs. Temp
Temp
-25 0 25 50 75 100 125 150
4.98
4.99
5.00
5.01
5.02 [V]
Sof tst art Voltage vs. Temp
Temp
Figure 7. Feedback Offset Vo ltage vs. Temp Figure 8. Feedback Source Current vs. Temp
Figure 9. ShutDown Delay Current vs. Temp Figure 10. ShutDown Feedback Voltage vs. Temp
Figure 11. Softstart Voltage vs. Temp Figure 12. Over Voltage Protection vs. Temp
-25 025 50 75 100 125 150
32.0
32.5
33.0
33.5
34.0[V]
Tem
p
FS6M12653RTC
7
Typical Performance Characteristics (Continued)
-25 0 25 50 75 100 125 150
10.8
10.9
11.0
11.1
11.2 [V]
Burst Mode Low Voltage vs. Temp
Temp
-25 0 25 50 75 100 125 150
11.8
11.9
12.0
12.1
12.2 [V]
Burst Mode High Voltage vs. Temp
Temp
Figure 13. Burst Mode Lo w Voltage vs. Te mp Figure 14. Burst Mode High Voltage vs. Temp
Figure 15. Burst Mode Peak Current vs. Temp
-25 0 25 50 75 100 125 150
0.48
0.54
0.60
0.66
0.72
[
A
]
Burst Mode Peak Current vs. Temp
Tem
p
-25 025 50 75 100 125 150
0.48
0.54
0.60
0.66
0.72
[
A
]
Burst Mode Peak Current vs. Temp
Tem
p
Figure 16. Burst Mode Peak Current vs. Temp
FS6M12653RTC
8
Package Dimensions
TO-220F-5L
FS6M12653RTC
9
Package Dimensions (Continued)
TO-220F-5L(Forming)
FS6M12653RTC
8/25/03 0.0m 001
Stock#DSxxxxxxxx
2003 Fairchild Semiconductor Corporation
LIFE SU PP ORT POL ICY
FAIRCHIL D’S PRODUCT S ARE NO T A UTHORIZED FOR USE AS CRITICAL C OM PONENT S IN L IFE S UPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used he r ein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critica l co mpon ent in an y comp o nent of a l if e suppo r t
devic e or sy stem whose f ai lur e to pe rform ca n be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
www.fairchildsemi.com
DISCLAIMER
FAIRCHIL D SEMICONDU CTOR RESERVES T HE RIGHT TO MA KE CHANGES WITHOUT FURT HER NOTICE TO ANY
PRO DUC TS HEREIN TO IMPR OVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY A NY L I CENSE UND ER IT S PATENT R IG HT S, NOR THE RIGHTS OF OT HE RS.
Ordering Information
TU : Non Forming Ty pe
YDT : Form ing Type
Product Number Package Marking Code BVdss Rds(on)
FS6M12653RTCTU TO-220F-5L 6M12653R
C650V 0.7
FS6M12653RTCYDT TO-220F-5L(Forming)
