AUTOMOTIVE GRADE AUIRF1018ES HEXFET(R) Power MOSFET Features Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * VDSS 60V RDS(on) typ. 7.1m max. 8.4m ID 79A D Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Base part number D2Pak AUIRF1018ES G Gate D Drain Standard Pack Form Quantity Tube 50 Tape and Reel Left 800 Package Type D2-Pak AUIRF1018ES S G S Source Orderable Part Number AUIRF1018ES AUIRF1018ESTRL Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless Symbol Parameter ID @ TC = 25C Continuous Drain Current, VGS @ 10V 79 ID @ TC = 100C IDM PD @TC = 25C Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation 56 315 110 VGS EAS IAR EAR dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance Symbol RJC RJA Parameter Junction-to-Case Junction-to-Ambient (PCB Mount), D2 Pak Max. Units A W 0.76 20 88 47 11 21 -55 to + 175 W/C V mJ A mJ V/ns C 300 Typ. Max. Units --- --- 1.32 40 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-11-23 AUIRF1018ES Static @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage Min. 60 Typ. Max. Units --- --- V Conditions VGS = 0V, ID = 250A V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient --- RDS(on) Static Drain-to-Source On-Resistance --- 7.1 8.4 VGS(th) Gate Threshold Voltage 2.0 --- 4.0 V gfs RG Forward Trans conductance Internal Gate Resistance IDSS Drain-to-Source Leakage Current 110 --- --- --- 0.73 --- --- --- 20 --- --- 250 S VDS = 50V, ID = 47A VDS = 60V, VGS = 0V A VDS = 48V,VGS = 0V,TJ =125C IGSS Gate-to-Source Forward Leakage --- --- 100 Gate-to-Source Reverse Leakage --- --- -100 0.073 --- V/C Reference to 25C, ID = 5mA m VGS = 10V, ID = 47A nA VDS = VGS, ID = 100A VGS = 20V VGS = -20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff.(ER) Coss eff.(TR) Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Effective Output Capacitance (Time Related) Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM ton Reverse Recovery Current Forward Turn-On Time --- --- --- --- --- --- --- --- --- --- --- --- --- 46 10 12 34 13 35 55 46 2290 270 130 390 630 69 --- --- --- --- --- --- --- --- --- --- --- --- Min. Typ. Max. Units --- --- 79 --- --- 315 --- --- --- --- --- --- --- 26 31 24 35 1.8 1.3 39 47 36 53 --- ID = 47A VDS = 30V nC VGS = 10V VDD = 39V ID = 47A ns RG= 10 VGS = 10V VGS = 0V VDS = 50V pF = 1.0MHz VGS = 0V, VDS = 0V to 60V VGS = 0V, VDS = 0V to 60V Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25C,IS = 47A,VGS = 0V TJ = 25C VDD = 51V ns TJ = 125C IF = 47A, TJ = 25C di/dt = 100A/s nC TJ = 125C A TJ = 25C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25C, L = 0.08mH, RG = 25, IAS = 47A, VGS =10V. Part not recommended for use above this value. ISD 47A, di/dt 1668A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 R is measured at TJ approximately 90C. This is only applied to TO-220. 2 2015-11-23 AUIRF1018ES 1000 1000 VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V 100 BOTTOM 4.5V 10 VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 100 BOTTOM 4.5V 10 60s PULSE WIDTH 60s PULSE WIDTH Tj = 25C Tj = 175C 1 1 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) Fig. 1 Typical Output Characteristics R DS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current(A) 100 2.5 100 TJ = 175C 10 TJ = 25C 1 VDS = 25V 60s PULSE WIDTH 0.1 2 3 4 5 6 7 8 ID = 47A VGS = 10V 2.0 1.5 1.0 0.5 9 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (C) VGS, Gate-to-Source Voltage (V) Fig. 4 Normalized On-Resistance vs. Temperature Fig. 3 Typical Transfer Characteristics 4000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd VGS, Gate-to-Source Voltage (V) 16 Coss = Cds + Cgd 3000 C, Capacitance (pF) 10 Fig. 2 Typical Output Characteristics 1000 C iss 2000 1000 C oss ID= 47A VDS = 48V VDS = 30V 12 VDS = 12V 8 4 C rss 0 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 1 VDS, Drain-to-Source Voltage (V) 0 0 10 20 30 40 50 60 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 2015-11-23 AUIRF1018ES 10000 100 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 1000 TJ = 175C 10 TJ = 25C 1 OPERATION IN THIS AREA LIMITED BY R DS (on) 1000 100 1msec 10 10msec 1 Tc = 25C Tj = 175C Single Pulse VGS = 0V 0.0 0.5 1.0 1.5 0.1 2.0 ID , Drain Current (A) 80 60 40 20 0 50 75 100 125 150 10 100 175 Fig 8. Maximum Safe Operating Area V(BR)DSS, Drain-to-Source Breakdown Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage 25 1 VDS , Drain-toSource Voltage (V) VSD , Source-to-Drain Voltage (V) 80 Id = 5mA 75 70 65 60 -60 -40 -20 0 20 40 60 80 100 120 140160 180 TJ , Temperature ( C ) TC , CaseTemperature (C) Fg 9. Maximum Drain Current vs. Case Temperature Fig 10. Drain-to-Source Breakdown Voltage 400 EAS, Single Pulse Avalanche Energy (mJ) 0.8 0.6 Energy (J) DC 0.1 0.1 0.4 0.2 ID 5.3A 11A BOTTOM 47A 350 TOP 300 250 200 150 100 50 0 0.0 0 10 20 30 40 50 VDS, Drain-to-Source Voltage (V) Fig 11. Typical COSS Stored Energy 4 100sec 60 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (C) Fig 12. Maximum Avalanche Energy vs. Drain Current 2015-11-23 AUIRF1018ES Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 0.05 J 0.02 0.01 R1 R1 J 1 R2 R2 R3 R3 C 2 1 2 3 3 Ci= iRi Ci= iRi 0.01 R4 R4 SINGLE PULSE ( THERMAL RESPONSE ) 4 4 C Ri (C/W) i (sec) 0.026741 0.000007 0.28078 0.000091 0.606685 0.000843 0.406128 0.005884 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse) Avalanche Current (A) Duty Cycle = Single Pulse 0.01 10 0.05 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Avalanche Current vs. Pulse width EAR , Avalanche Energy (mJ) 100 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 47A 80 60 40 20 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (C) Fig 15. Maximum Avalanche Energy vs. Temperature 5 Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.infineon.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 18a, 18b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 13, 14). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3*BV*Iav) = T/ ZthJC Iav = 2T/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav 2015-11-23 AUIRF1018ES 4.0 ID = 1.0A ID = 1.0mA 3.5 ID = 100A 14 12 IF = 32A VR = 51V 10 TJ = 25C TJ = 125C ID = 250A 3.0 IRR (A) VGS(th) Gate threshold Voltage (V) 4.5 2.5 8 6 2.0 4 1.5 2 0 1.0 -75 -50 -25 0 25 50 75 0 100 125 150 175 200 600 800 1000 diF /dt (A/s) TJ , Temperature ( C ) Fig. 17 - Typical Recovery Current vs. dif/dt Fig 16. Threshold Voltage vs. Temperature 320 14 12 IF = 47A VR = 51V 10 TJ = 25C TJ = 125C IF = 32A VR = 51V 280 TJ = 25C TJ = 125C 240 QRR (nC) IRR (A) 400 8 6 200 160 120 80 4 40 2 0 0 0 200 400 600 800 0 1000 200 400 600 800 1000 diF /dt (A/s) diF /dt (A/s) Fig. 18 - Typical Recovery Current vs. dif/dt Fig. 19 - Typical Stored Charge vs. dif/dt 320 IF = 47A VR = 51V 280 TJ = 25C TJ = 125C QRR (nC) 240 200 160 120 80 40 0 0 200 400 600 800 1000 diF /dt (A/s) Fig. 20 - Typical Stored Charge vs. dif/dt 6 2015-11-23 AUIRF1018ES Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V(BR)DSS 15V tp L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A 0.01 Fig 22a. Unclamped Inductive Test Circuit Fig 23a. Switching Time Test Circuit I AS Fig 22b. Unclamped Inductive Waveforms Fig 23b. Switching Time Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Fig 24a. Gate Charge Test Circuit 7 Qgd Qgodr Fig 24b. Gate Charge Waveform 2015-11-23 AUIRF1018ES D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches)) D2Pak (TO-263AB) Part Marking Information Part Number AUF1018ES YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 2015-11-23 AUIRF1018ES D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2015-11-23 AUIRF1018ES Qualification Information Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level Moisture Sensitivity Level D2-Pak Human Body Model ESD Charged Device Model RoHS Compliant MSL1 Class H1B (+/- 1000V) AEC-Q101-001 Class C5 (+/- 1000V) AEC-Q101-005 Yes Revision History Date 11/23/2015 Comments Updated datasheet with corporate template Corrected ordering table on page 1. Added ESD table on page10 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2015 All Rights Reserved. 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It is the responsibility of customer's technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies' products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 10 2015-11-23