AUIRF1018ES
VDSS 60V
RDS(on) typ. 7.1m
max. 8.4m
ID 79A
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
1 2015-11-23
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 79
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 56
IDM Pulsed Drain Current 315
PD @TC = 25°C Maximum Power Dissipation 110 W
Linear Derating Factor 0.76 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) 88
mJ
IAR Avalanche Current 47 A
EAR Repetitive Avalanche Energy 11 mJ
dv/dt Peak Diode Recovery 21 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Thermal Resistance
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case ––– 1.32
°C/W
RJA Junction-to-Ambient (PCB Mount), D2 Pak ––– 40
D2Pak
AUIRF1018ES
S
D
G
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
AUIRF1018ES D2-Pak Tube 50 AUIRF1018ES
Tape and Reel Left 800 AUIRF1018ESTRL
G D S
Gate Drain Source
HEXFET® Power MOSFET
AUIRF1018ES
2 2015-11-23
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.08mH, RG = 25, IAS = 47A, VGS =10V. Part not recommended for use above this value.
I
SD 47A, di/dt 1668A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
C
oss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
C
oss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R
is measured at TJ approximately 90°C.
This is only applied to TO-220.
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.073 ––– V/°C Reference to 25°C, ID = 5mA
RDS(on) Static Drain-to-Source On-Resistance ––– 7.1 8.4 m VGS = 10V, ID = 47A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 100µA
gfs Forward Trans conductance 110 ––– ––– S VDS = 50V, ID = 47A
RG Internal Gate Resistance ––– 0.73 –––
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 60V, VGS = 0V
––– ––– 250 VDS = 48V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge ––– 46 69
nC
ID = 47A
Qgs Gate-to-Source Charge ––– 10 ––– VDS = 30V
Qgd Gate-to-Drain Charge ––– 12 ––– VGS = 10V
Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 34 –––
td(on) Turn-On Delay Time ––– 13 –––
ns
VDD = 39V
tr Rise Time ––– 35 ––– ID = 47A
td(off) Turn-Off Delay Time ––– 55 ––– RG= 10
tf Fall Time ––– 46 ––– VGS = 10V
Ciss Input Capacitance ––– 2290 –––
pF
VGS = 0V
Coss Output Capacitance ––– 270 ––– VDS = 50V
Crss Reverse Transfer Capacitance ––– 130 ––– ƒ = 1.0MHz
Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 390 ––– VGS = 0V, VDS = 0V to 60V
Coss eff.(TR) Effective Output Capacitance (Time Related) ––– 630 ––– VGS = 0V, VDS = 0V to 60V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 79
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 315 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 47A,VGS = 0V
trr Reverse Recovery Time ––– 26 39 ns TJ = 25°C VDD = 51V
––– 31 47 TJ = 125°C IF = 47A,
Qrr Reverse Recovery Charge ––– 24 36 nC TJ = 25°C di/dt = 100A/µs
––– 35 53 TJ = 125°C
IRRM Reverse Recovery Current ––– 1.8 ––– A TJ = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
AUIRF1018ES
3 2015-11-23
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics
Fig. 1 Typical Output Characteristics
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig. 4 Normalized On-Resistance vs. Temperature
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
BOTTOM 4.5V
60µs PULSE WIDTH
Tj = 25°C
4.5V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
BOTTOM 4.5V
60µs PULSE WIDTH
Tj = 175°C
4.5V
2 3 4 5 6 7 8 9
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current
(A)
TJ = 25°C
TJ = 175°C
VDS = 25V
60µs PULSE WIDTH
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 47A
VGS = 10V
110 100
VDS, Drain-to-Source Voltage (V)
0
1000
2000
3000
4000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 102030405060
QG Total Gate Charge (nC)
0
4
8
12
16
VGS, Gate-to-Source Voltage (V)
VDS= 48V
VDS= 30V
VDS= 12V
ID= 47A
AUIRF1018ES
4 2015-11-23
Fig 8. Maximum Safe Operating Area
Fig 10. Drain-to-Source Breakdown Voltage
Fig 11. Typical COSS Stored Energy Fig 12. Maximum Avalanche Energy vs. Drain Current
Fg 9. Maximum Drain Current vs. Case Temperature
0.0 0.5 1.0 1.5 2.0
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
0.1 1 10 100
VDS, Drain-toSource Voltage (V)
0.1
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
DC
25 50 75 100 125 150 175
TC , CaseTemperature (°C)
0
20
40
60
80
ID , Drain Current (A)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Temperature ( °C )
60
65
70
75
80
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Id = 5mA
010 20 30 40 50 60
VDS, Drain-to-Source Voltage (V)
0.0
0.2
0.4
0.6
0.8
Energy (µJ)
25 50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
0
50
100
150
200
250
300
350
400
EAS, Single Pulse Avalanche Energy (mJ)
ID
TOP
5.3A
11A
BOTTOM
47A
AUIRF1018ES
5 2015-11-23
Fig 14. Avalanche Current vs. Pulse width
Fig 15. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 13, 14).
t
av = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
Z
thJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z
thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
J
J
1
1
2
23
3
R1
R1R2
R2R3
R3
Ci= iRi
Ci= iRi
C
C
4
4
R4
R4
Ri (°C/W) i (sec)
0.026741 0.000007
0.606685 0.000843
0.406128 0.005884
0.28078 0.000091
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
Avalanche Current (A)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
20
40
60
80
100
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 10% Duty Cycle
ID = 47A
AUIRF1018ES
6 2015-11-23
Fig 16. Threshold Voltage vs. Temperature
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 20 - Typical Stored Charge vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical Recovery Current vs. dif/dt
-75 -50 -25 025 50 75 100 125 150 175
TJ , Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS(th) Gate threshold Voltage (V)
ID = 1.0A
ID = 1.0mA
ID = 250µA
ID = 100µA
0200 400 600 800 1000
diF /dt (A/µs)
0
2
4
6
8
10
12
14
IRR (A)
IF = 32A
VR = 51V
TJ = 25°C
TJ = 125°C
0200 400 600 800 1000
diF /dt (A/µs)
0
2
4
6
8
10
12
14
IRR (A)
IF = 47A
VR = 51V
TJ = 25°C
TJ = 125°C
0200 400 600 800 1000
diF /dt (A/µs)
0
40
80
120
160
200
240
280
320
QRR (nC)
IF = 32A
VR = 51V
TJ = 25°C
TJ = 125°C
0200 400 600 800 1000
diF /dt (A/µs)
0
40
80
120
160
200
240
280
320
QRR (nC)
IF = 47A
VR = 51V
TJ = 25°C
TJ = 125°C
AUIRF1018ES
7 2015-11-23
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 22a. Unclamped Inductive Test Circuit Fig 22b. Unclamped Inductive Waveforms
Fig 23a. Switching Time Test Circuit
Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
tp
V
(BR)DSS
I
AS
Fig 23b. Switching Time Waveforms
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
AUIRF1018ES
8 2015-11-23
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
D2Pak (TO-263AB) Part Marking Information
YWWA
XX XX
Date Code
Y= Year
WW= Work Week
AUF1018ES
Lot Code
Part Number
IR Logo
D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
AUIRF1018ES
9 2015-11-23
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
AUIRF1018ES
10 2015-11-23
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level D2-Pak MSL1
ESD
Human Body Model Class H1B (+/- 1000V)†
AEC-Q101-001
Charged Device Model Class C5 (+/- 1000V)†
AEC-Q101-005
RoHS Compliant Yes
Revision History
Date Comments
11/23/2015
Updated datasheet with corporate template
Corrected ordering table on page 1.
Added ESD table on page10
