Silicon Power Transistor 2N3773AR Technical Data Typical Applications : These devices are designed for high power audio , disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers , dc to dc converters or inverters. Specification Fetaures : F Complementary NPN Silicon Power Transistor F 16 Amp / 140 V device in TO-204AA [ TO-3 ] package F 150 Watts device F High safe operating area [ 150 W @ 100 V ] F Completely characterized for linear operation F High DC current gain & low saturation voltage Symbol Parameters / Conditions Ratings Maximum Ratings : V CEO Collector- Emitter Voltage 140 Vdc V CEX V CBO V EBO IC I CM Collector- Emitter Voltage Collector - Base Voltage Emitter Base Voltage Collector Current - Continuos Peak : Pulse width = 5 ms , Duty Cycle 10 Base Current - Continuos Peak : Pulse width = 5 ms , Duty Cycle 10 % 160 Vdc 160 Vdc 7 Vdc 16 Adc 30 Adc % 4 Adc 15 Adc IB I BM Thermal Characteristics : 1.17 C/W R thjc Thermal resistance junction to case PD Total Power Dissipation @ Tc = 25 C Derate above 25 C Operating and Storage Junction Temperature Range Tj & T Stg 150 Watta 0.855 W /C -65 C ....+ 200 C ELECTRICAL CHARACTERISTICS : [ Tc = 25 C unless otherwise noted ] Characteristic Symbol Min Typ Max Unit Off Characteristics : [ Pulse Test : Pulse width = 300 s , Duty Cycle 2 % ] Collector - Emitter Breakdown Voltage [ Ic = 0.2 Adc , IB = 0 ] Collector - Emitter Sustaining Voltage [ Ic = 0.1 Adc , VBE(off) = 1.5 Vdc , RBE = 100 Ohms ] Collector - Emitter Sustaining Voltage [ Ic = 0.2 Adc , R BE = 100 Ohms ] Collector Cutoff Current [ VCE = 120 Vdc , IB = 0 ] Collector Cutoff Current [ VCE = 140 Vdc , VBE(off) = 1.5 Vdc ] [ V CE = 140 V, VBE(off) = 1.5 Vdc , Tc = 150 C ] Collector Cutoff Current [ VCB = 140 Vdc , IE = 0 ] Emitter Base Leakage [ VEB = 7 Vdc , Ic = 0 ] VCEO(sus) 140 Vdc VCEX(sus) 160 Vdc VCER(sus) 150 Vdc ICEO 10 Vdc 2 mAdc ICEX 10 ICBO 2 Vdc 5 mAdc IEBO On Characteristics : [ Pulse Test : Pulse width = 300 s , Duty Cycle 2 % ] DC Current Gain [ Ic = 4 Adc , VCE = 4 Vdc ] hFE 110 80 Collector-Emitter Saturation Voltage [ Ic = 8 Adc , IB = 800 mAdc ] [ Ic = 16 Adc , IB = 3.2 Adc ] Base-Emitter Saturation Voltage [ Ic = 8 Adc , IB = 4 Adc ] VCE(sat) Vdc 1.4 4 VBE(on) Vdc 2.2 Dynamic Characteristics : Magnitude of Common Emitter small signal , short circuit , forward curremt transfer ratio [ Ic = 1 Adc , f=50 KHz ] Small signal current gain [ I C = 1 Adc , VCE = 100 Vdc , f = 1 KHz ] | hfe | 4 hfe 40 IS/b 1.5 Second Breakdown Characteristics : Second Breakdown Collector Current with Base Forward Biased t = 1 s [non-repetitive ] , VCE = 100 Vdc Adc