Silicon Power Transistor
2N3773AR
Technical Data
Typical Applications : These devices are designed for high power audio , disk
head positioners and other linear applications. These devices can also be used in
power switching circuits such as relay or solenoid drivers , dc to dc converters or
inverters.
Specification Fetaures :
F Complementary NPN Silicon Power Transistor
F 16 Amp / 140 V device in TO-204AA [ TO-3 ] package
F 150 Watts device
F High safe operating area [ 150 W @ 100 V ]
F Completely characterized for linear operation
F High DC current gain & low saturation voltage
Symbol Parameters / Conditions Ratings
Maximum Ratings :
V CEO Collector- Emitter Voltage 140 Vdc
V CEX Collector- Emitter Voltage 160 Vdc
V CBO Collector - Base Voltage 160 Vdc
V EBO Emitter Base Voltage 7 Vdc
I C
I CM
Collector Current – Continuos
Peak : Pulse width = 5 ms , Duty Cycle 10 % 16 Adc
30 Adc
I B
I BM
Base Current – Continuos
Peak : Pulse width = 5 ms , Duty Cycle 10 % 4 Adc
15 Adc
Thermal Characteristics :
R thjc Thermal resistance junction to case 1.17 °C/W
P D Total Power Dissipation @ Tc = 25 °C
Derate above 25 °C150 Watta
0.855 W /°C
Tj & T Stg Operating and Storage Junction Temperature Range -65 °C ….+ 200 °C
ELECTRICAL CHARACTERISTICS :
[ Tc = 25 °C unless otherwise noted ]
Characteristic Symbol Min Typ Max Unit
Off Characteristics : [ Pulse Test : Pulse width = 300 µs , Duty Cycle 2 % ]
Collector – Emitter Breakdown
Voltage [ Ic = 0.2 Adc , IB = 0 ] VCEO(sus) 140 Vdc
Collector – Emitter Sustaining
Voltage [ Ic = 0.1 Adc , V
BE(off) =
1.5 Vdc , RBE = 100 Ohms ]
VCEX(sus) 160 Vdc
Collector – Emitter Sustaining
Voltage [ Ic = 0.2 Adc , RBE = 100
Ohms ]
VCER(sus) 150 Vdc
Collector Cutoff Current [ V
CE =
120 Vdc , IB = 0 ] ICEO 10 Vdc
Collector Cutoff Current
[ V
CE = 140 Vdc , VBE(off) = 1.5
Vdc ]
[ V
CE = 140 V, VBE(off) = 1.5 Vdc ,
Tc = 150 °C ]
ICEX 2
10
mAdc
Collector Cutoff Current [ V
CB =
140 Vdc , IE = 0 ] ICBO 2 Vdc
Emitter Base Leakage
[ VEB = 7 Vdc , Ic = 0 ] IEBO 5 mAdc
On Characteristics : [ Pulse Test : Pulse width = 300 µs , Duty Cycle 2 % ]
DC Current Gain
[ Ic = 4 Adc , VCE = 4 Vdc ] hFE 80 110
Collector-Emitter Saturation
Voltage
[ Ic = 8 Adc , IB = 800 mAdc ]
[ Ic = 16 Adc , IB = 3.2 Adc ]
VCE(sat)
1.4
4
Vdc
Base-Emitter Saturation Voltage
[ Ic = 8 Adc , IB = 4 Adc ] VBE(on) 2.2 Vdc
Dynamic Characteristics :
Magnitude of Common Emitter
small signal , short circuit ,
forward curremt transfer ratio
[ Ic = 1 Adc , f=50 KHz ]
| hfe |4
Small signal current gain
[ I
C = 1 Adc , VCE = 100 Vdc , f =
1 KHz ]
hfe 40
Second Breakdown Characteristics :
Second Breakdown Collector
Current with Base Forward Biased
t = 1 s [non-repetitive ] , VCE = 100
Vdc
IS/b 1.5 Adc