Supertex inc.
Supertex inc.
www.supertex.com
TN0604
Doc.# DSFP-TN0604
D080813
Features
►Low threshold (1.6V max.)
►High input impedance
►Low input capacitance (140pF typical)
►Fast switching speeds
►Low on-resistance
►Free from secondary breakdown
►Low input and output leakage
Applications
►Logic level interfaces - ideal for TTL and CMOS
►Solid state relays
►Battery operated systems
►Photo voltaic drives
►Analog switches
►General purpose line drivers
►Telecom switches
General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input impedance
and positive temperature coefcient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
N-Channel Enhancement-Mode
Vertical DMOS FET
Absolute Maximum Ratings
Parameter Value
Drain-to-source voltage BVDSS
Drain-to-gate voltage BVDGS
Gate-to-source voltage ±20V
Operating and storage temperature -55OC to +150OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Pin Conguration
TO-92
GATE
SOURCE
DRAIN
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
SiTN
0604
YYWW
TO-92
Product Marking
Package may or may not include the following marks: Si or
Ordering Information
Part Number Package Option Packing
TN0604N3-G TO-92 1000/Bag
TN0604N3-G P002
TO-92 2000/Reel
TN0604N3-G P003
TN0604N3-G P005
TN0604N3-G P013
TN0604N3-G P014
Product Summary
BVDSS/BVDGS
RDS(ON)
(max)
ID(ON)
(min)
VGS(th)
(max)
40V 0.75Ω4.0A 1.6V
Typical Thermal Resistance
Package θja
TO-92 132OC/W
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
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TN0604
Supertex inc.
www.supertex.com
Doc.# DSFP-TN0604
D080813
Electrical Characteristics (TA = 25OC unless otherwise specied)
Sym Parameter Min Typ Max Units Conditions
BVDSS Drain-to-source breakdown voltage 40 - - V VGS = 0V, ID = 2.0mA
VGS(th) Gate threshold voltage 0.6 - 1.6 V VGS = VDS, ID= 1.0mA
ΔVGS(th) Change in VGS(th) with temperature - -3.8 -4.5 mV/OC VGS = VDS, ID= 1.0mA
IGSS Gate body leakage - - 100 nA VGS = ± 20V, VDS = 0V
IDSS Zero gate voltage drain current
- - 10 µA VGS = 0V, VDS = Max Rating
- - 1.0 mA VDS = 0.8 Max Rating,
VGS = 0V, TA = 125°C
ID(ON) On-state drain current 1.5 2.1 - AVGS = 5.0V, VDS = 20V
4.0 7.0 - VGS = 10V, VDS = 20V
RDS(ON) Static drain-to-source on-state resistance - 1.0 1.6 ΩVGS = 5.0V, ID = 0.75A
- 0.6 0.75 VGS = 10V, ID = 1.5A
ΔRDS(ON) Change in RDS(ON) with temperature - 0.5 0.75 %/OC VGS = 10V, ID = 1.5A
GFS Forward transductance 500 800 - mmho VDS = 20V, ID = 1.5A
CISS Input capacitance - 140 190
pF
VGS = 0V,
VDS = 20V,
f = 1.0MHz
COSS Common source output capacitance - 75 110
CRSS Reverse transfer capacitance - 25 50
td(ON) Turn-on delay time - - 10
ns
VDD = 20V,
ID = 0.5A,
RGEN = 25Ω
trRise time - - 6.0
td(OFF) Turn-off delay time - - 25
tfFall time - - 20
VSD Diode forward voltage drop - 1.2 1.8 V VGS = 0V, ISD = 1.5A
trr Reverse recovery time - 300 - ns VGS = 0V, ISD = 1.0A
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Notes:
† ID (continuous) is limited by max rated Tj .
Thermal Characteristics
Package ID
(continuous)†
ID
(pulsed)
Power Dissipation
@TA = 25OCIDR
†IDRM
TO-92 0.7A 4.6A 0.74W 0.7A 4.6A
Switching Waveforms and Test Circuit
90%
10%
90% 90%
10%
10%
Pulse
Generator
VDD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
r
INPUT
INPUT
OUTPUT
10V
VDD
R
GEN
0V
0V
t
f
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TN0604
Supertex inc.
www.supertex.com
Doc.# DSFP-TN0604
D080813
Typical Performance Curves
Power Dissipation vs. Ambient Temperature
0 25 50 75 100 125 150
TO-92
TA (OC)
VGS = 10V
Output Characteristics
10
8.0
6.0
4.0
2.0
0
0 10 20 30 40
9V
8V
7V
6V
5V
4V
3V
VDS (volts)
ID (amperes)
Saturation Characteristics
0 2.0 4.0 6.0 8.0 10
4V
6V
3V
5V
7V
8V
Maximum Rated Safe Operating Area
0.1 1.0 10 100
10
1.0
0.1
0.01
TO-92 (DC)
TC = 25OC
VDS (volts)
ID (amperes)
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
00.001 0.01 0.1 1.0 10
tP (seconds)
Transconductance vs. Drain Current
2.0
1.0
00 1.0 2.0 3.0 4.0 5.0 6.0 7.0
GFS (siemens)
ID (amperes)
TA = -55OC
PD (watts)
VDS = 25V
TO-92 (pulsed)
9V
TO-92
PD = 1.0W
TC = 25OC
VGS = 10V
VDS (volts)
ID (amperes)
125OC
25OC
10
8.0
6.0
4.0
2.0
0
2.0
1.0
0
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TN0604
Supertex inc.
www.supertex.com
Doc.# DSFP-TN0604
D080813
Typical Performance Curves (cont.)
Gate Drive Dynamic Characteristics
10
8.0
6.0
4.0
2.0
0 0 1.0 2.0 3.0 4.0 5.0
170 pF
1.4
1.2
1.0
0.8
0.6
On-Resistance vs. Drain Current
2.0
1.0
0
0 5.0 10
1.1
1.0
0.9
-50 0 50 100 150
Transfer Characteristics
10
8.0
6..0
4.0
2.0
0
0 2.0 4.0 6.0 8.0 10
V
DS
= 25V
Capacitance vs. Drain-to-Source Voltage
200
150
100
50
0
0 10 20 30 40
C (picofarads)
f = 1.0MHz
C
OSS
C
RSS
170 pF
V
(th)
@1.0mA
R
DS
@10V, 1.5A
C
ISS
RDS(ON) (ohms)
BVDSS (normalized)
Tj (OC) ID (amperes)
BVDSS Variation with Temperature
V
GS
= 5.0V
VGS(th) (normalized)
RDS(ON) (normalized)
V(th) and RDS Variation with Temperature
VGS (volts)
ID (amperes)
QG (nanocoulombs)
VGS (volts)
VDS (volts)
V
DS
= 10V
V
GS
= 1.0V
Tj (OC)
T
A
= -55
O
C
25
O
C
125
O
C
V
DS
= 40V
-50 0 50 100 150
1.4
1.2
1.0
0.8
0.6
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)
©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
5
TN0604
(The package drawing(s) in this data sheet may not reect the most current specications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Doc.# DSFP-TN0604
D080813
3-Lead TO-92 Package Outline (N3)
Symbol A b c D E E1 e e1 L
Dimensions
(inches)
MIN .170 .014†.014†.175 .125 .080 .095 .045 .500
NOM - - - - - - - - -
MAX .210 .022†.022†.205 .165 .105 .105 .055 .610*
JEDEC Registration TO-92.
* This dimension is not specied in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO92N3, Version E041009.
Seating
Plane
1
2
3
Front View Side View
Bottom View
E1 E
D
e1
L
e
c
1 2 3
b
A
