IGBT MODULE Spec.No.IGBT-SP-06028 R2 P1/9 MBN1200H33D Silicon N-channel IGBT FEATURES High speed, low loss IGBT module. Low driving power due to low input capacitance MOS gate. Low noise due to ultra soft fast recovery diode. High reliability, high durability module. High thermal fatigue durability. (delta Tc=70K, N>30,000cycles) High isolation package o ABSOLUTE MAXIMUM RATINGS (Tc=25 C ) Item Symbol Collector Emitter Voltage Gate Emitter Voltage VCES VGES DC IC Collector Current 1ms ICp DC IF Forward Current 1ms IFM Junction Temperature Tj Storage Temperature Tstg Isolation Voltage VISO Terminals (M4/M8) Screw Torque Mounting (M6) Notes: (1) Recommended Value 1.80.2/91N*m Unit MBN1200H33D V V 3,300 20 1,200 A 2,400 1,200 A 2,400 o C -40 ~ +125 o C -40 ~ +125 VRMS 10,200(AC 1 minute) 2/10 (1) N*m 6 (2) (2) Recommended Value 5.50.5N*m ELECTRICAL CHARACTERISTICS Item Symbol Unit Min. Typ. Max. Test Conditions o 12 VCE=3,300V, VGE=0V, Tj=25 C Collector Emitter Cut-Off Current I CES mA o 20 60 VCE=3,300V, VGE=0V, Tj=125 C o Gate Emitter Leakage Current IGES nA -500 +500 VGE=20V, VCE=0V, Tj=25 C o Collector Emitter Saturation Voltage VCE(sat) V 3.4 4.2 5.2 IC=1,200A, VGE=15V, Tj=125 C o Gate Emitter Threshold Voltage VGE(TO) V 4.5 6.0 7.0 VCE=10V, IC=1,200mA, Tj=25 C o Input Capacitance Cies nF 110 VCE=10V, VGE=0V, f=100kHz, Tj=25 C o Internal Gate Resistance Rge 1.2 VCE=10V, VGE=0V, f=100kHz, Tj=25 C Rise Time tr 0.6 1.9 3.1 VCC=1,650V, Ic=1,200A Turn On Time ton 1.1 2.4 3.3 L=100nH Switching Times s Fall Time tf 0.1 1.0 2.5 RG=3.3/3.3 (3) o Turn Off Time toff 0.9 3.0 5.1 VGE=15V, Tj=125 C o Peak Forward Voltage Drop VFM V 1.9 2.5 3.0 IF=1,200A, VGE=0V, Tj=125 C Reverse Recovery Time trr s 0.1 0.6 1.1 VCC=1,650V, Ic=1,200A, L=100nH Turn On Loss Eon(10%) J/P 1.6 2.1 RG= 3.3/3.3 (3) Turn Off Loss Eoff(10%) J/P 1.3 1.7 V =15V, Tj=125oC GE Reverse Recovery Loss Err(10%) J/P 1.2 1.9 Stray inductance module LSCE nH 12 IGBT Rth(j-c) 0.009 Thermal Impedance K/W Junction to case FWD Rth(j-c) 0.018 Contact Thermal Impedance Rth(c-f) K/W 0.006 Case to fin Notes:(3) RG value is the test condition's value for evaluation of the switching times, not recommended value. Please, determine the suitable RG value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted. * Please contact our representatives at order. * For improvement, specifications are subject to change without notice. * For actual application, please confirm this spec sheet is the newest revision. http://store.iiic.cc/ IGBT MODULE Spec.No.IGBT-SP-06028 R2 MBN1200H33D 1.Outline drawing. Unit in mm Weight: 1550g 2. Circuit diagram C C C C E E E G E http://store.iiic.cc/ P2/9 IGBT MODULE Spec.No.IGBT-SP-06028 R2 P3/9 MBN1200H33D 3. Characteristics data 3.1 Static characteristics T Y P IC A L 2000 Tc = 2 5 TY PIC AL 2000 Tc=125 V G E = 15 V 13V 11V V G E= 15V 13V 11V 1500 Collector Curent , Ic (A) Collector Curent , Ic (A) 1500 1000 500 1000 500 0 0 0 2 4 6 8 10 C o lle cto r to E m itter V o lta g e, V C E (V ) T Y P IC A L 2000 1500 Tc= 25 Tc= 125 1000 500 0 0 1 2 3 0 2 4 6 8 10 Collector to Emitter Voltage, VCE(V) C o llecto r C u rren t v s .C o llecto r to E m itter V o lta ge Forward Curent , IF (A) 4 5 F o r w a r d V o lta g e , V F (V ) F o r w a r d V o l ta g e o f fr e e -w h e e l i n g d i o d e http://store.iiic.cc/ C ollector C urrent vs.C ollector to Em itter Voltage IGBT MODULE Spec.No.IGBT-SP-06028 R2 P4/9 MBN1200H33D 3.2 Dynamic characteristics 3.2.1 Measurement circuit and definition of waveform Ls LLOAD Vcc Rg G/D Fig.1 Switching test circuit Ic Vce Ls= VL t 0 VL dIc d t=tL ( ) tL Fig.2 Definition of Ls Ic Ic Vce 90% Vce Vce 0.1Vce 90% Irm 0 0 Vge 10% t1 10% 10% 10% tr ton t3 t4 t t t2 0 0 10% 90% t5 t7 t8 trr IF -Ic t6 t9 t8 IcVce dt Eoff(10%)= IcVce dt Err(10%)= Eoff(Full)= IcVce dt t5 Fig.3 Definition of switching loss http://store.iiic.cc/ t12 t10 IFVce dt t11 t6 IcVce dt t11 t12 t7 t2 t1 t tf toff t3 Eon(Full)= t t Vge t4 Eon(10%)= 0.5Irm 0.1IF 0 t10 Err(Full)= IFVce dt t9 IGBT MODULE P5/9 Spec.No.IGBT-SP-06028 R2 MBN1200H33D 3.2.2 Dependence of switching loss on current 2.0 TYPICAL Conditions TYPICAL 2.0 VGE=15VRg(on)=3.3 Vcc=1650VL100nHTj=125 Inductive load Conditions Conditions VGE=15VRg(off)=3.3 Vcc=1650VL100nHTj=125 Inductive load Eon(Full) IC 10% t 90% tf toff t5 t7 t8 t6 t4 t2 VCE dt Eon(full)= IC VCE dt Eon(10%)= V GE 0 1.5 tr ton t1t3 t4 Turn-off Loss , Eoff (J/pulse) Turn-on Loss , Eon (J/pulse) 0 V GE 10% 0 10% 10% 10% 0 90% Eon(10%) 90% 1.5 V CE IC V CE IC t3 t2 t1 1.0 Eoff(Full) t8 Eoff(10%)= Eoff(full)= IC t7 t6 IC t5 VCE dt Eoff(10%) VCE dt 1.0 0.5 0.5 0.0 0 500 1000 1500 0.0 Collector Current , Ic (A) 0 Turn-on Loss vs. Collector Current TYPICAL 4.0 Conditions VGE=15VRg(on)=3.3 Vcc=1650VL100nHTj=125 Inductive load Conditions VGE=15VRg(on/off)=3.3 Vcc=1650VL100nHTj=125 Inductive load 3.5 0.1V CE 2.0 V CE 0.5IRM 0.1IF IRM 0 1500 Turn-off Loss vs. Collector Current TYPICAL 2.5 500 1000 Collector Current , Ic (A) t trr Err(10%)= Err(full)= 1.5 t11 IF CE dt F CE dt t11 t10 t9 t10 V I V t12 toff 3.0 t12 t9 Err(Full) Err(10%) 1.0 Switching time , ton , tr , toff , tf , trr (us) Reverse Recovery Loss , Err (J/pulse) IF -IC 2.5 ton 2.0 tr 1.5 tf 1.0 0.5 trr 0.5 0.0 0.0 0 500 1000 1500 Forward Current , IF (A) Recovery Loss vs. Forward Current http://store.iiic.cc/ 0 500 1000 Collector Current , Ic (A) Switching time vs. Collector current 1500 IGBT MODULE Spec.No.IGBT-SP-06028 R2 P6/9 MBN1200H33D 3.2.3 Dependence of switching loss on gate resistance TYPICAL 4.0 TYPICAL 2.0 3.0 1.5 Turn-off Loss , Eoff (J/pulse) Turn-on Loss , Eon (J/pulse) Eoff(full) 2.0 Eon(full) Condit ions VGE=15VIC=1200A Vcc=1650VL100nHTj=125 Inductive load Eon(10%) Eoff(10%) 1.0 Conditions Conditions VGE=15VIC=1200A Vcc=1650VL100nHTj=125 Inductive load IC 90% 0.5 90% 10% 0 10% 10% 0 V CE IC V CE 1.0 V GE V GE tr ton t1t3 t5 t7 t8 t6 t4 t2 V Eon(full)= I V Eon(10%)= t4 IC CE t3 C CE Eoff(10%)= dt t2 t1 t tf toff 10% 0 Eoff(full)= dt 0.0 t8 IC t7 t6 IC t5 VCE dt VCE dt 0.0 0 2 4 6 Gate Resistance , Rg ( 8 ) 10 2.0 Err(full) 1.5 Err(10%) Conditions 1.0 VGE=15VIF=1200A Vcc=1650VL100nHTj=125 Inductive load 0.1V CE 0 0.5 V CE 0.5IRM 0.1IF IRM t trr IF -IC t12 t9 Err(10%)= Err(full)= t11 t10 V I V t12 IF CE dt F CE dt t11 t10 t9 0.0 0 2 4 6 Gate Resistance , Rg ( ) 2 4 6 8 ) 8 Turn-off Loss vs. Gate Resistance TYPICAL 2.5 0 Gate Resistance , Rg ( Turn-on Loss vs. Gate Resistance Reverse Recovery Loss , Err (J/pulse) 10% 90% 0 10 Recovery Loss vs. Gate Resistance http://store.iiic.cc/ 10 IGBT MODULE Spec.No.IGBT-SP-06028 R2 MBN1200H33D 4. RBSOA / Recovery SOA RBSOA Vcc=2300V, Ic=2400A, Rg(on/off)=3.3/3.3 , VGE= 15V, Ls=100nH, Tc=125 (Measured at auxiliary terminal) 3000 Ic to be turned off (A) 2500 2000 1500 1000 500 0 0 500 1000 1500 2000 2500 3000 3500 VCE spike voltage (V) between auxiliary terminal Recovery SOA Vcc=2000V, Ic=-IF=2400A, Rg(on/off)=3.3/3.3 , VGE= 15V, Ls=100nH, Tc=125 (Measured at auxiliary terminal) SOA diode o Tj=125 C 3000 2500 Pmax=2.4MW Ic (A) 2000 1500 1000 500 0 0 500 1000 1500 2000 2500 3000 3500 VF (V) http://store.iiic.cc/ P7/9 IGBT MODULE Spec.No.IGBT-SP-06028 R2 P8/9 MBN1200H33D 5. Transient thermal impedance n 1 2 3 4 5 6 7 Unit th[n] 0.30 0.1 0.03 0.01 0.003 0.001 0.0003 sec Zth[n,IGBT] 1.79E-03 4.55E-03 1.59E-05 1.44E-03 1.15E-03 3.47E-06 4.25E-05 K/W Zth[n,Diode] 3.58E-03 9.13E-03 1.01E-05 2.89E-03 2.31E-03 1.16E-06 8.63E-05 K/W Maximum Transient thermal impedance : Zth(j-c) (K/W) 0.1 FWD 0.01 I GBT 0.001 0.0001 0.001 0.01 0.1 Time : t(s) 1 10 Transient Thermal Impedance Curve Negative environmental impact material Please note the following negative environmental impact materials are contained in the product in order to keep product characteristic and reliability level. Material Contained part Lead (Pb) and its compounds Solder Arsenic and its compounds Si chip http://store.iiic.cc/ IGBT MODULE Spec.No.IGBT-SP-06028 R2 P9/9 MBN1200H33D HITACHI POWER SEMICONDUCTORS Notices 1. The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. 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