IGBT MODULE Spec.No.IGBT-SP-06028 R2
P1/9
MBN1200H33D
Silicon N-channel IGBT
FEATURES
∗ High speed, low loss IGBT module.
∗ Low driving power due to low input
capacitance MOS gate.
∗ Low noise due to ultra soft fast recovery diode.
∗ High reliability, high durability module.
∗ High thermal fatigue durability.
(delta Tc=70K, N>30,000cycles)
∗ High isolation package
ABSOLUTE MAXIMUM RATINGS (Tc=25
oC
)
Item Symbol Unit MBN1200H33D
Collector Emitter Voltage V
CES
V 3,300
Gate Emitter Voltage V
GES
V ±20
DC I
C
1,200
Collector Current 1ms I
Cp
A 2,400
DC I
F
1,200
Forward Current 1ms I
FM
A 2,400
Junction Temperature T
j
o
C -40 ~ +125
Storage Temperature T
stg
o
C -40 ~ +125
Isolation Voltage V
ISO
V
RMS
10,200(AC 1 minute)
Terminals
(M4/M8)
- 2/10 (1)
Screw Torque Mounting
(M6)
- N·m 6 (2)
Notes: (1) Recommended Value 1.8±0.2/9±1N·m (2) Recommended Value 5.5±0.5N·m
ELECTRICAL CHARACTERISTICS
Item Symbol
Unit
Min.
Typ.
Max.
Test Conditions
- - 12 V
CE
=3,300V, V
GE
=0V, Tj=25
o
C
Collector Emitter Cut-Off Current I
CES
mA - 20 60 V
CE
=3,300V, V
GE
=0V, Tj=125
o
C
Gate Emitter Leakage Current I
GES
nA -500
- +500
V
GE
=±20V, V
CE
=0V, Tj=25
o
C
Collector Emitter Saturation Voltage V
CE(sat)
V 3.4 4.2 5.2 I
C
=1,200A, V
GE
=15V, Tj=125
o
C
Gate Emitter Threshold Voltage V
GE(TO)
V 4.5 6.0 7.0 V
CE
=10V, I
C
=1,200mA, Tj=25
o
C
Input Capacitance C
ies
nF - 110
- V
CE
=10V, V
GE
=0V, f=100kHz, Tj=25
o
C
Internal Gate Resistance Rge
Ω
- 1.2 - V
CE
=10V, V
GE
=0V, f=100kHz, Tj=25
o
C
Rise Time t
r
0.6 1.9 3.1 V
CC
=1,650V, Ic=1,200A
Turn On Time
t
on
1.1 2.4 3.3 L=100nH
Fall Time t
f
0.1 1.0 2.5 R
G
=3.3/3.3
Ω
(3)
Switching Times
Turn Off Time t
off
µs
0.9 3.0 5.1 V
GE
=±15V, Tj=125
o
C
Peak Forward Voltage Drop V
FM
V 1.9 2.5 3.0 IF=1,200A, V
GE
=0V, Tj=125
o
C
Reverse Recovery Time t
rr
µs 0.1 0.6 1.1
Turn On Loss E
on(10%)
J/P - 1.6 2.1
Turn Off Loss E
off(10%)
J/P - 1.3 1.7
Reverse Recovery Loss E
rr(10%)
J/P - 1.2 1.9
V
CC
=1,650V, Ic=1,200A, L=100nH
R
G
= 3.3/3.3
Ω
(3)
V
GE
=±15V, Tj=125
o
C
Stray inductance module L
SCE
nH - 12 -
IGBT Rth(j-c)
- - 0.009
Thermal Impedance FWD Rth(j-c)
K/W
- - 0.018
Junction to case
Contact Thermal Impedance
Rth(c-f)
K/W
- 0.006
- Case to fin
Notes:(3) R
G
value is the test condition’s value for evaluation of the switching times, not recommended value.
Please, determine the suitable R
G
value after the measurement of switching waveforms
(overshoot voltage, etc.) with appliance mounted.
* Please contact our representatives at order.
* For improvement, specifications are subject to change without notice.
* For actual application, please confirm this spec sheet is the newest revision.
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IGBT MODULE Spec.No.IGBT-SP-06028 R2
P2/9
MBN1200H33D
1.Outline drawing.
Unit in mm
Weight: 1550g
2. Circuit diagram
E E E
E
G
C
C
C
C
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IGBT MODULE Spec.No.IGBT-SP-06028 R2
P3/9
MBN1200H33D
3. Characteristics data
3.1 Static characteristics
0
500
1 0 0 0
1 5 0 0
2 0 0 0
0 1 2 3 4 5
F o r w a r d V o l t a g e , V F (V )
Forward Curent , IF (A)
F o r w a r d V o lta g e o f f r e e -w h ee l i n g d io d e
T Y P IC A L
T c = 2 5
℃
℃℃
℃
T c = 1 2 5
℃
℃℃
℃
TY P IC A L
0
500
1000
1500
2000
0 2 4 6 8 10
Collector to Emitter V oltage , VCE(V)
Collector Curent , Ic (A)
V
G E
=15V 13V 11V
Tc=125
℃
℃℃
℃
C ollector C urrent vs.C ollector to Emitter Volta ge
T Y P IC A L
0
500
1000
1500
2000
0 2 4 6 8 10
C o llector to E mitter V oltage, V C E(V )
Collector Curent , Ic (A)
V
G E
= 15V 13V 11 V
T c = 2 5
℃
℃℃
℃
C o llecto r C u rr en t vs .C o llecto r to E m itte r V o lta ge
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IGBT MODULE Spec.No.IGBT-SP-06028 R2
P4/9
MBN1200H33D
3.2 Dynamic characteristics
3.2.1 Measurement circuit and definition of waveform
Fig.1 Switching test circuit
Vcc
Ls
L
LOAD
Rg
G/D
Fig.2 Definition of Ls
Ic
t
0
VL
tL
Vce
t=t
L
Ls=
V
L
dIc
d
ｔ
(
)
Fig.3 Definition of switching loss
t4
t3
Ic
ton
tr
Vge
10%
10%
10%
90%
Vce
t
0
t
0
t1
t2
t5
90%
90%
Vge
Vce
Ic
10%
10%
toff
tf
t8
t7
t0
t0
t6
0.1IF
t9
t10
Vce
0.1Vce
0.5Irm
Irm
-Ic
trr
t12
t11
t
0
IF
Eon(10%)=
∫
Ic
･
Vce dt
Eon(Full)=
∫
Ic
･
Vce dt
t2
t1
Eoff(10%)=
∫
Ic
･
Vce dt
t8
t7
Eoff(Full)=
∫
Ic
･
Vce dt
t12
t11
Err(10%)=
∫
IF
･
Vce dt
Err(Full)=
∫
IF
･
Vce dt
t10
t9
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IGBT MODULE Spec.No.IGBT-SP-06028 R2
P5/9
MBN1200H33D
3.2.2 Dependence of switching loss on current
0.0
0.5
1.0
1.5
2.0
0 500 1000 1500
Collector Current , Ic (A)
Turn-on Loss , Eon (J/pulse)
Eon(Full)
Eon(10%)
TYPICAL
Turn-on Loss vs. Collector Current
【
【 【
【Conditions
ConditionsConditions
Conditions】
】】
】
VGE=±15V、Rg(on)=3.3Ω
Vcc=1650V、L≒100nH、Tj=125℃
Inductive load
I
C
V
GE
10%
10%
V
CE
0
0
t1
t3 t4 t2
Eon(10%)=
∫
I
C
・
V
CE
dt
Eon(full)=
∫
I
C
・
V
CE
dt
t4
t2
t3
t1
90%
tr
ton
10%
0.0
0.5
1.0
1.5
2.0
0 500 1000 1500
Collector Current , Ic (A)
Turn-off Loss , Eoff (J/pulse)
Eoff(Full)
TYPICAL
Turn-off Loss vs. Collector Current
Eoff(10%)
【
【 【
【Conditions
ConditionsConditions
Conditions】
】】
】
VGE=±15V、Rg(off)=3.3Ω
Vcc=1650V、L≒100nH、Tj=125℃
Inductive load
Eoff(10%)=
∫
I
C
・
V
CE
dt
Eoff(full)=
∫
I
C
・
V
CE
dt
t8
t6
t7
t5
V
GE
V
CE
I
C
10%
10%
t8t7
t
0
0
t5
t6
tf
90%
90%
toff
0.0
0.5
1.0
1.5
2.0
2.5
0 500 1000 1500
Forward Current , IF (A)
Reverse Recovery Loss , Err (J/pulse)
TYPICAL
Recovery Loss vs. Forward Current
Err(Full)
Err(10%)
【
【 【
【Conditions
ConditionsConditions
Conditions】
】】
】
VGE=±15V、Rg(on)=3.3Ω
Vcc=1650V、L≒100nH、Tj=125℃
Inductive load
Err(10%)=
∫
I
F
・
V
CE
dt
Err(full)=
∫
I
F
・
V
CE
dt
t12
t10
t11
t9
V
CE
0.1V
CE
0.1I
F
I
RM
-I
C
t10t11
t
0
t12
t9
I
F
trr
0.5I
RM
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 500 1000 1500
Collector Current , Ic (A)
Switching time , ton , tr , toff , tf , trr (us)
TYPICAL
Switching time vs. Collector current
trr
tf
ton
tr
toff
【
【 【
【Conditions
ConditionsConditions
Conditions】
】】
】
VGE=±15V、Rg(on/off)=3.3Ω
Vcc=1650V、L≒100nH、Tj=125℃
Inductive load
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IGBT MODULE Spec.No.IGBT-SP-06028 R2
P6/9
MBN1200H33D
3.2.3 Dependence of switching loss on gate resistance
0.0
1.0
2.0
3.0
4.0
0 2 4 6 8 10
Gate Resistance , Rg (
Ω
ΩΩ
Ω
)
Turn-on Loss , Eon (J/pulse)
TYPICAL
Turn-on Loss vs. Gate Resistance
Eon(10%)
Eon(full)
【
【 【
【Conditions
ConditionsConditions
Conditions】
】】
】
VGE=±15V、IC=1200A
Vcc=1650V、L≒100nH、Tj=125℃
Inductive load
I
C
V
GE
10%
10%
V
CE
0
0
t1t3 t4 t2
Eon(10%)=
∫
I
C
・
V
CE
dt
Eon(full)=
∫
I
C
・
V
CE
dt
t4
t2
t3
t1
90%
tr
ton
10%
0.0
0.5
1.0
1.5
2.0
0 2 4 6 8 10
Gate Resistance , Rg (
Ω
ΩΩ
Ω
)
Turn-off Loss , Eoff (J/pulse)
TYPICAL
Turn-off Loss vs. Gate Resistance
Eoff(10%)
Eoff(full)
【
【 【
【Conditions
ConditionsConditions
Conditions】
】】
】
VGE=±15V、IC=1200A
Vcc=1650V、L≒100nH、Tj=125℃
Inductive load
Eoff(10%)=
∫
I
C
・
V
CE
dt
Eoff(full)=
∫
I
C
・
V
CE
dt
t8
t6
t7
t5
V
GE
V
CE
I
C
10%
10%
t8t7
t
0
0
t5 t6
tf
90%
90%
toff
0.0
0.5
1.0
1.5
2.0
2.5
0 2 4 6 8 10
Gate Resistance , Rg (
Ω
ΩΩ
Ω
)
Reverse Recovery Loss , Err (J/pulse)
TYPICAL
Recovery Loss vs. Gate Resistance
Err(10%)
Err(full)
【
【 【
【Conditions
ConditionsConditions
Conditions】
】】
】
VGE=±15V、IF=1200A
Vcc=1650V、L≒100nH、Tj=125℃
Inductive load
Err(10%)=
∫
I
F
・
V
CE
dt
Err(full)=
∫
I
F
・
V
CE
dt
t12
t10
t11
t9
V
CE
0.1V
CE
0.1I
F
I
RM
-I
C
t10t11
t
0
t12
t9
I
F
trr
0.5I
RM
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IGBT MODULE Spec.No.IGBT-SP-06028 R2
P7/9
MBN1200H33D
4. RBSOA / Recovery SOA
RBSOA
0
500
1000
1500
2000
2500
3000
0 500 1000 1500 2000 2500 3000 3500
VCE
　spike　voltage
(V)
between
　auxiliary　terminal
Ic to be turned off (A)
Recovery SOA
SOA diode
0
500
1000
1500
2000
2500
3000
0 500 1000 1500 2000 2500 3000 3500
VF (V)
Ic (A)
Tj=125
o
C
Pmax=2.4MW
Vcc=2000V, Ic=-IF=2400A, Rg(on/off)=3.3/3.3
Ω
, VGE=
±
15V, Ls=100nH, Tc=125
℃
(Measured at auxiliary terminal)
Vcc=2300V, Ic=2400A, Rg(on/off)=3.3/3.3
Ω
, VGE=
±
15V, Ls=100nH, Tc=125
℃
(Measured at auxiliary terminal)
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IGBT MODULE Spec.No.IGBT-SP-06028 R2
P8/9
MBN1200H33D
5. Transient thermal impedance
n 1 2 3 4 5 6 7 Unit
τth[n] 0.30 0.1 0.03 0.01 0.003 0.001 0.0003 sec
Zth[n,IGBT] 1.79E-03 4.55E-03 1.59E-05 1.44E-03 1.15E-03 3.47E-06 4.25E-05 K/W
Zth[n,Diode] 3.58E-03 9.13E-03 1.01E-05 2.89E-03 2.31E-03 1.16E-06 8.63E-05 K/W
Transient Thermal Impedance Curve
0.0001
0.001
0.01
0.1
0.001 0.01 0.1 1 10
Time : t(s)
IGBT
IGBTIGBT
IGBT
FWD
FWDFWD
FWD
Transient thermal impedance : Zth(j-c) (K/W)
Maximum
Negative environmental impact material
Please note the following negative environmental impact materials are contained in the
product in order to keep product characteristic and reliability level.
Material Contained part
Lead (Pb) and its compounds Solder
Arsenic and its compounds Si chip
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IGBT MODULE Spec.No.IGBT-SP-06028 R2
P9/9
MBN1200H33D
HITACHI POWER SEMICONDUCTORS
For inquiries relating to the products, please contact nearest overseas representatives which is located
“Inquiry” portion on the top page of a home page.
Hitachi power semiconductor home page address http://www.hitachi.co.jp/products/power/pse/
Notices
NoticesNotices
Notices
1. The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are advised to contact Hitachi sales department for the latest version of this
data sheets.
2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3. In cases where extremely high reliability is required(such as use in nuclear power control,
aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel
control equipment and various kinds of safety equipment), safety should be ensured by
using semiconductor devices that feature assured safety or by means of users’ fail-safe
precautions or other arrangement. Or consult Hitachi’s sales department staff.
4. In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5. In no event shall Hitachi be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6. No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi, Ltd.
7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,
without the expressed written permission of Hitachi, Ltd.
8. The products (technologies) described in this data sheets are not to be provided to any
party whose purpose in their application will hinder maintenance of international peace
and safety not are they to be applied to that purpose by their direct purchasers or any
third party. When exporting these products (technologies), the necessary procedures are
to be taken in accordance with related laws and regulations.
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