Single N-channel Trench MOSFET 30V, 100.0A, 3.4m Features General Description The MDU1512 uses advanced MagnaChip's MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1512 is suitable device for DC to DC converter and general purpose applications. VDS = 30V ID = 100.0A @VGS = 10V RDS(ON) (MAX) < 3.4m @VGS = 10V < 5.0m @VGS = 4.5V 100% UIL Tested 100% Rg Tested D D D D D D D D D S S S G G S S S G PowerDFN56 S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Symbol Rating Unit VDSS 30 V VGSS 20 V o TC=25 C 64 o TC=70 C Continuous Drain Current (1) o 86.3 ID TA=25 C 30.4(3) TA=70oC 24.2(3) IDM Pulsed Drain Current o TC=25 C TC=70 C o Single Pulse Avalanche Energy (2) 256 44.4 PD TA=25 C 5.5(3) TA=70oC 3.5(3) EAS 136 TJ, Tstg -55~150 Symbol Rating Steady State RJA 22.7 Steady State RJC 1.8 Junction and Storage Temperature Range A 69.4 o Power Dissipation A W mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Unit o C/W Thermal Resistance, Junction-to-Case Apr. 2016. Version 1.5 1 MagnaChip Semiconductor Ltd. MDU1512 - Single N-Channel Trench MOSFET 30V MDU1512 Part Number Temp. Range Package Packing Quantity Rohs Status MDU1512RH -55~150oC PowerDFN56 Tape & Reel 3000 units Halogen Free Electrical Characteristics (TJ = 25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 30 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.9 2.7 - - 1 - - 5 - - 0.1 - 3.0 3.4 Drain Cut-Off Current IDSS Gate Leakage Current IGSS VDS = 30V, VGS = 0V o TJ=55 C VGS = 20V, VDS = 0V VGS = 10V, ID = 24A Drain-Source ON Resistance Forward Transconductance o RDS(ON) gfs - 4.4 4.9 VGS = 4.5V, ID = 20A TJ=125 C - 4.2 5.0 VDS = 5V, ID = 10A - 42 - 26.5 35.3 44.1 12.6 16.8 21.0 - 7.0 - - 5.4 - 1615 2153 2691 V A m S Dynamic Characteristics Total Gate Charge Qg(10V) Total Gate Charge Qg(4.5V) Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss VDS = 15V, ID = 24A, VGS = 10V VDS = 15V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance Crss 157 209 261 Output Capacitance Coss 337 449 561 Turn-On Delay Time td(on) - 12.2 - - 12.2 - - 39.4 - - 10.3 - Rise Time Turn-Off Delay Time Fall Time Gate Resistance tr td(off) VGS = 10V, VDS = 15V, ID = 24A, RG = 3.0 tf nC pF ns Rg f=1 MHz - 1.0 2.0 VSD IS = 24A, VGS = 0V - 0.8 1.1 V - 29.1 43.7 ns - 21.2 31.8 nC Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IF = 24A, dl/dt = 100A/s Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7) 2. EAS is tested at starting Tj = 25, L = 0.1mH, IAS =.29.0A, VDD = 27V, VGS = 10V. 3. T < 10sec. Apr. 2016. Version 1.5 2 MagnaChip Semiconductor Ltd. MDU1512 - Single N-Channel Trench MOSFET 30V Ordering Information 8 VGS = 10V Drain-Source On-Resistance [m] 3.5V 4.0V ID, Drain Current [A] 40 4.5V 30 20 3.0V 10 0 0.0 0.5 1.0 1.5 2.0 2.5 6 VGS = 4.5V 4 VGS = 10V 2 0 3.0 5 10 15 VDS, Drain-Source Voltage [V] 20 25 30 35 40 50 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 100 1.8 Notes : Notes : 1. VGS = 10 V 2. ID = 20.0 A 1.6 ID = 24.0A RDS(ON) [m ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance 45 ID, Drain Current [A] 1.4 1.2 1.0 80 60 40 20 0.8 TA = 25 0.6 -50 0 -25 0 25 50 75 100 125 2 150 3 4 5 6 7 8 9 TJ, Junction Temperature [ C] VGS, Gate to Source Volatge [V] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage o 18 TA=25 Notes : 10 100 VDS = 5V 12 10 25 -IS [A] ID, Drain Current [A] 15 9 6 1 3 0 0 1 2 3 4 0.1 0.3 5 VGS, Gate-Source Voltage [V] 0.5 0.6 0.7 0.8 0.9 1.0 -VSD [V] Fig.5 Transfer Characteristics Apr. 2016. Version 1.5 0.4 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDU1512 - Single N-Channel Trench MOSFET 30V 50 Note : ID = 24A VDS = 15V 2500 Capacitance [pF] VGS, Gate-Source Voltage [V] 8 6 4 Ciss 2000 1500 1000 2 Notes ; 1. VGS = 0 V 2. f = 1 MHz Coss 500 Crss 0 0 0 4 8 12 16 20 24 28 32 36 0 40 5 10 15 20 25 30 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Fig.8 Capacitance Characteristics 3 Operation in This Area is Limited by R DS(on) 100 1 ms 10 ms 2 80 100 ms ID, Drain Current [A] ID, Drain Current [A] 10 1s 10 1 10 0 10s DC Limited by Package 60 40 20 Single Pulse TJ=Max rated TC=25 10 -1 10 -1 0 1 10 10 10 0 25 2 50 1 1 ZJA(t), Thermal Response ZJC(t), Thermal Response D=0.5 0 0.2 0.1 0.05 0.02 -2 0.01 Notes : 0 10 D=0.5 0.2 0.1 -1 10 0.05 0.02 0.01 -2 10 * Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * ZJA * RJA(t) + TA single pulse Duty Factor, D=t 1/t2 PEAK TJ = PDM * ZJC * RJC(t) + TC single pulse -3 10 -3 10 150 10 10 10 125 Fig.10 Maximum Drain Current vs. Case Temperature 10 -1 100 Fig.9 Maximum Safe Operating Area 10 75 TC, Case Temperature [ ] VDS, Drain-Source Voltage [V] -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve (Junction-to-Case) Apr. 2016. Version 1.5 -4 10 3 10 Fig.12 Transient Thermal Response Curve (Junction-to-Ambient) 4 MagnaChip Semiconductor Ltd. MDU1512 - Single N-Channel Trench MOSFET 30V 3000 10 PDFN56 (5x6mm) Dimensions are in millimeters, unless otherwise specified Dimension MILLIMETERS Min Max A 0.90 1.10 b 0.33 0.51 C 0.20 0.34 D1 4.50 5.10 D2 - 4.22 E 5.90 6.30 E1 5.50 6.10 E2 - 4.30 e Apr. 2016. Version 1.5 5 1.27BSC H 0.41 0.71 K 0.20 - L 0.51 0.71 0 12 MagnaChip Semiconductor Ltd. MDU1512 - Single N-Channel Trench MOSFET 30V Package Dimension MDU1512 - Single N-Channel Trench MOSFET 30V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller's customers using or selling Seller's products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Apr. 2016. Version 1.5 6 MagnaChip Semiconductor Ltd.