XX1001-QK-0N00 - M/A-COM Technology Solutions

• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

Doubler and Power Amplifier

18.0-21.0/36.0-42.0 GHz

XX1001-QK

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Rev. V1

Features

 Integrated Doubler and Power Amplifier

 Excellent Saturated Output Stage

 +25.0 dBm Output Power

 50.0 dBc Fundamental Suppression

 RoHS* Compliant and 260°C Reflow Compatible

Description

M/A-COM Tech’s 18.0-21.0/36.0-42.0 GHz GaAs

doubler integrates a doubler, a buffer amplifier and 4

-stage power amplifier. The device provides better

than +25.0 dBm output power and has excellent

fundamental rejection. The device comes in a

7x7mm QFN package that is RoHS compliant. This

device is well suited for Millimeter-wave Point-to-

Point Radio, LMDS, SATCOM and VSAT

applications.

Ordering Information

Part Number Package

XX1001-QK-0N00 bulk quantity

XX1001-QK-0N0T tape and reel

XX1001-QK-EV1 evaluation board

Functional Block Diagram

Pin Configuration

Pin No. Function Pin No. Function

3 Ground 17 Ground

4 RF Input 18 Output RF

5 Ground 19 Ground

9 Gate Bias

(Doubler) 22 Drain Bias (PA)

10 Drain Bias

(Doubler) 23 Drain Bias (PA)

11 Gate Bias (Buffer

Amplifier) 24 Drain Bias (PA)

12 Gate Bias (PA) 25 Drain Bias (PA)

13 Gate Bias (PA) 26 Drain Bias (Buffer

Amplifier)

14 Gate Bias (PA) 27 Gate Bias (PA)

Absolute Maximum Ratings1

Parameter Absolute Max.

Supply Voltage (Vd) +6.0 VDC

Supply Current (Id) 800 mA

Gate Bias Voltage (Vg) +0.3 VDC

Input Power (RF Pin) TBD

Storage Temperature (Tstg) -65 °C to +165 °C

Operating Temperature (Ta) -55 °C to MTTF Table1

Channel Temperature (Tch) MTTF Table1

Moisture Sensitivity Level MSL3

(1) Channel temperature directly affects a device's MTTF. Channel tem-

perature should be kept as low as possible to maximize lifetime.

• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

Doubler and Power Amplifier

18.0-21.0/36.0-42.0 GHz

XX1001-QK

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Rev. V1

Electrical Specifications: 18-21 GHz (fin) (Ambient Temperature T = 25°C)

Parameter Units Min. Typ. Max.

Output Frequency Range (fout) GHz 36.0 - 42.0

Input Return Loss (S11) dB - TBD -

Output Return Loss (S22) dB - 12.0 -

Fundamental Rejection dBc - 50.0 -

RF Input Power (RF Pin) dBm - 0.0 -

Output Power at 0.0 dBm Pin (Pout) dBm - +26.0 -

Drain Supply Voltage (Vd1) Doubler V - 2.5 3.0

Drain Supply Voltage (Vd2) Buffer Amplifier V - 3.0 4.0

Drain Supply Voltage (Vd3,4,5,6) Power Amplifier V - 4.5 5.5

Gate Supply Voltage (Vg1) Doubler V - -1.2 -

Drain Supply Current (Id1) Doubler mA - <1.0 -

Drain Supply Current (Id2) Buffer Amplifier mA - 20 25

Drain Supply Current (Id3,4,5,6) (Vg=-0.7V Typical) Power Amplifier mA - 530 600

• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

Doubler and Power Amplifier

18.0-21.0/36.0-42.0 GHz

XX1001-QK

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Rev. V1

Recommended Layout

• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

Doubler and Power Amplifier

18.0-21.0/36.0-42.0 GHz

XX1001-QK

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Rev. V1

Typical Performance Curves (Measured at Nominal Conditions)

34 36 38 40 42 44

Pin = 0 dBm

Pin = 3 dBm

Pin = 6 dBm

Pin = 9 dBm

-45

-40

-35

-30

-25

-20

-15

-10

-5

17 18 19 20 21 22

Pin = 0 dBm

Pin = 3 dBm

Pin = 6 dBm

Pin = 9 dBm

• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

Doubler and Power Amplifier

18.0-21.0/36.0-42.0 GHz

XX1001-QK

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Rev. V1

MTTF

MTTF is calculated from accelerated life-time data of single devices and assumes an isothermal back-plate.

1.0E+00

1.0E+01

1.0E+02

1.0E+03

1.0E+04

1.0E+05

55 65 75 85 95

• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

Doubler and Power Amplifier

18.0-21.0/36.0-42.0 GHz

XX1001-QK

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Rev. V1

App Note [1] Biasing - Please refer to the application diagram below for recommended biasing information.

The table below shows the recommended drain currents for each stage.

Bias Application Schematic

Pin Voltage (V) Current (mA) Comment

VD1 2.5 <1 Drain Bias (Doubler)

VD2 3.0 20 Drain Bias (Buffer Amplifier)

VD3,4,5 4.5 260 Drain Bias (Power Amplifier)

VD6 4.5 270 Drain Bias (Power Amplifier—final stage)

It is possible to bias each stage separately for greater bias control with the following conditions: Id1<1mA,

Id2=20mA, Id3=40mA, Id4=70mA, Id5=150mA, Id6=270mA. It is recommended to use active biasing to keep the

currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on

the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a

low power operational amplifier, with a low value resistor in series with the drain supply used to sense the cur-

rent. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical

gate voltage needed to do this is -0.7V. Typically the gate is protected with Silicon diodes to limit the applied

voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before apply-

ing the positive drain supply.

8910 11 12 13 14

22232425262728

RFIN RFOUT

XX1001-QK

Vg1 (-0.7V)

10 nF

1 µF

10 nF

1 µF

10 nF

1 µF

10 nF

1 µF +

Vd1 (+2.5V)

Vg3,4,5 (-1.2V)

Vg6 (-1.2V)

10 nF

1 µF +

10 nF

1 µF

10 nF

1 µF

10 nF

1 µF

Vg2 (-0.5V)

Vd2 (+3V)

Vd3,4,5 (+ 4.5V)

Vd6 (+ 4.5V)

• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

Doubler and Power Amplifier

18.0-21.0/36.0-42.0 GHz

XX1001-QK

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Rev. V1

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

Gallium Arsenide Integrated Circuits are sensitive

to electrostatic discharge (ESD) and can be

damaged by static electricity. Proper ESD control

techniques should be used when handling these

class 2 devices.

Lead-Free Package Dimensions/Layout