AP4427GM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D D Fast Switching Characteristic D D BVDSS 35V RDS(ON) 6.6m ID RoHS Compliant SO-8 S S S 16A G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G S The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Rating Units 35 V +20 V 3 16 A 3 12.8 A Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current 60 A PD@TA=25 Total Power Dissipation 2.5 W Linear Derating Factor 0.02 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 50 /W 1 200811032 AP4427GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions VGS=0V, ID=1mA Min. Typ. Max. Units 35 - - V BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.03 - V/ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=7.5A - - 6.6 m VGS=4.5V, ID=7.5A - - 10 m 0.8 - 2.3 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA gfs Forward Transconductance VDS=10V, ID=7.5A - 33 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=70 C) VDS=30V, VGS=0V - - 25 uA Gate-Source Leakage VGS=+20V - - +100 nA ID=15A - 35 56 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=24V - 7 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 22 - nC VDS=15V - 13 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=7.5A - 24 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 39 - ns tf Fall Time RD=2 - 17 - ns Ciss Input Capacitance VGS=0V - 2850 4560 pF Coss Output Capacitance VDS=10V - 890 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 635 - pF Rg Gate Resistance f=1.0MHz - 0.8 1.2 Min. Typ. IS=1.9A, VGS=0V - - 1.3 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=7.5A, VGS=0V, - 37 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 38 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 /W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP4427GM 60 60 10V 7.0V 5.0V 4.5V ID , Drain Current (A) 50 10V 7.0V 5.0V 4.5V o T A = 150 C 50 ID , Drain Current (A) o T A = 25 C 40 30 20 40 30 V G =3.0V 20 V G =3.0V 10 10 0 0 0 1 2 3 4 5 0 4 6 8 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 10 1.9 I D = 7.5 A V G =10V Normalized RDS(ON) I D = 7.5 A T A =25 RDS(ON) (m) 2 V DS , Drain-to-Source Voltage (V) 8 6 1.4 0.9 0.4 4 2 4 6 8 -50 10 0 50 100 150 o V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 14 1.6 T j =25 o C T j =150 o C Normalized VGS(th) (V) 12 IS(A) 10 8 6 1.2 0.8 4 2 0.4 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP4427GM f=1.0MHz 16 10000 V DS = 16 V V DS = 20 V V DS = 24 V 12 C iss C (pF) VGS , Gate to Source Voltage (V) I D = 7.5 A 8 1000 C oss C rss 4 100 0 0 20 40 60 1 80 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 Duty factor=0.5 10 Normalized Thermal Response (Rthja) 100us 1ms ID (A) 10ms 1 100ms 1s 0.1 o T A =25 C Single Pulse DC 0.2 0.1 0.1 0.05 0.02 PDM 0.01 0.01 t T Duty factor = t/T Peak Tj = PDM x Rthja + T a Single Pulse Rthja=125 oC/W 0.001 0.01 0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 120 V DS =5V T j =25 o C VG T j =150 o C ID , Drain Current (A) 100 QG 4.5V 80 QGS 60 QGD 40 20 Charge Q 0 0 2 4 6 8 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : SO-8 D Millimeters 8 7 6 5 E1 1 2 3 4 e B E SYMBOLS MIN NOM MAX A 1.35 1.55 1.75 A1 0.10 0.18 0.25 B 0.33 0.41 0.51 c 0.19 0.22 0.25 D 4.80 4.90 5.00 E 5.80 6.15 6.50 E1 3.80 3.90 4.00 e 1.27 TYP G 0.254 TYP L 0.38 0.90 0.00 4.00 8.00 A A1 G 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : SO-8 Part Number Package Code meet Rohs requirement 4427GM YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 5