BCR16CM-12L Triac Medium Power Use REJ03G0298-0200 Rev.2.00 Nov.08.2004 Features * IT (RMS) : 16 A * VDRM : 600 V * IFGTI, IRGTI, IRGT : 30 mA (20 mA)Note6 * Non-Insulated Type * Planar Passivation Type Outline TO-220 4 2, 4 3 1 12 1. 2. 3. 4. T1 Terminal T2 Terminal Gate Terminal T2 Terminal 3 Applications Contactless AC switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, electric fan, solenoid driver, small motor control, copying machine, electric tool, electric heater control, and other general purpose control applications Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Rev.2.00, Nov.08.2004, page 1 of 6 Symbol VDRM VDSM Voltage class 12 600 720 Unit V V BCR16CM-12L Parameter RMS on-state current Symbol IT (RMS) Ratings 16 Unit A Surge on-state current ITSM 170 A I2 t 121 A2s PGM PG (AV) VGM IGM Tj Tstg -- 5.0 0.5 10 2 - 40 to +125 - 40 to +125 2.0 W W V A C C g Symbol IDRM VTM Min. -- -- Typ. -- -- Max. 2.0 1.5 Unit mA V I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Conditions Commercial frequency, sine full wave Note3 360conduction, Tc = 100C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Test conditions Tj = 125C, VDRM applied Tc = 25C, ITM = 25 A, Instantaneous measurement Gate trigger voltageNote2 VFGT VRGT VRGT -- -- -- -- -- -- 1.5 1.5 1.5 V V V Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Gate trigger currentNote2 IFGT IRGT IRGT -- -- -- -- -- -- 30Note6 30Note6 30Note6 mA mA mA Tj = 25C, VD = 6 V, RL = 6 , RG = 330 VGD Rth (j-c) 0.2 -- -- -- -- 1.4 V C/W Gate non-trigger voltage Thermal resistance Tj = 125C, VD = 1/2 VDRM Junction to caseNote3 Note4 (dv/dt)c 10 -- -- V/s Tj = 125C Critical-rate of rise of off-state Note5 commutating voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured at the T2 tab 1.5 mm away from the molded case. 4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0C/W. 5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. 6. High sensitivity (IGT 20 mA) is also available. (IGT item: 1) Test conditions 1. Junction temperature Tj = 125C 2. Rate of decay of on-state commutating current (di/dt)c = - 8.0 A/ms 3. Peak off-state voltage VD = 400 V Rev.2.00, Nov.08.2004, page 2 of 6 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR16CM-12L Performance Curves 103 7 5 3 2 Rated Surge On-State Current 200 102 7 Tj = 125C 5 3 2 Tj = 25C 101 7 5 3 2 Surge On-State Current (A) On-State Current (A) Maximum On-State Characteristics 120 100 80 60 40 20 2 3 4 5 7 101 2 3 4 5 7 102 Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature 3 2 VGM = 10V PG(AV) = 0.5W PGM = 5W 101 7 5 IGM = 2A 3 VGT = 1.5V 2 100 7 5 3 2 Gate Trigger Current (Tj = tC) x 100 (%) Gate Trigger Current (Tj = 25C) Conduction Time (Cycles at 60Hz) 103 7 5 4 3 2 102 7 5 4 3 2 Typical Example IRGT III IFGT I, IRGT I 101 -60 -40 -20 0 20 40 60 80 100120140 Gate Current (mA) Junction Temperature (C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 4 3 2 Typical Example 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100120140 Junction Temperature (C) Nov.08.2004, page 3 of 6 Transient Thermal Impedance (C/W) Gate Voltage (V) 140 On-State Voltage (V) IFGT I, IRGT I, IRGT III VGD = 0.2V 10-1 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Gate Trigger Voltage (Tj = tC) x 100 (%) Gate Trigger Voltage (Tj = 25C) 160 0 100 100 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 Rev.2.00, 180 102 2 3 5 7 103 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) BCR16CM-12L Allowable Case Temperature vs. RMS On-State Current 40 160 35 140 Case Temperature (C) On-State Power Dissipation (W) Maximum On-State Power Dissipation 30 360 Conduction Resistive, 25 inductive loads 20 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 100 80 60 40 360 Conduction 20 Resistive, inductive loads 0 0 2 4 6 8 10 12 14 16 18 20 RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 160 100 x 100 x t2.3 100 60 x 60 x t2.3 80 60 40 20 0 2 4 6 Ambient Temperature (C) All fins are black painted 140 aluminum and greased Natural convection 120 120 x 120 x t2.3 140 120 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 100 80 60 40 20 0 8 10 12 14 16 18 20 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current vs. Junction Temperature Holding Current vs. Junction Temperature 105 7 Typical Example 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100120140 Junction Temperature (C) Nov.08.2004, page 4 of 6 Holding Current (Tj = tC) x 100 (%) Holding Current (Tj = 25C) Ambient Temperature (C) Repetitive Peak Off-State Current (Tj = tC) x 100 (%) Repetitive Peak Off-State Current (Tj = 25C) Rev.2.00, 120 RMS On-State Current (A) 160 0 Curves apply regardless of conduction angle 103 7 5 4 3 2 Typical Example 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100120140 Junction Temperature (C) 103 7 5 3 2 Distribution 102 7 5 3 2 101 7 5 3 2 T2+, G+ Typical Example T2-, G- 100 -40 Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) T2+, G- Typical Example 0 40 80 120 160 Breakover Voltage vs. Junction Temperature 160 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100120140 Junction Temperature (C) Breakover Voltage vs. Rate of Rise of Off-State Voltage Commutation Characteristics 160 Typical Example Tj = 125C 140 120 100 III Quadrant 80 60 I Quadrant 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 7 Typical Example 5 Tj = 125C 3 IT = 4A 2 = 500s VD = 200V f = 3Hz 1 10 7 Minimum 5 3 2 Gate Trigger Current (tw) x 100 (%) Gate Trigger Current (DC) Gate Trigger Current vs. Gate Current Pulse Width 103 7 5 4 3 2 Typical Example III Quadrant Characteristics Value 2 3 5 7 101 5 7102 2 3 2 3 Rate of Decay of On-State Commutating Current (A/ms) Gate Trigger Characteristics Test Circuits 6 6 IFGT I IRGT I IRGT III A 6V 6 2 3 4 5 7 101 2 3 4 5 7 102 A Gate Current Pulse Width (s) Nov.08.2004, page 5 of 6 V V 330 Test Procedure II Test Procedure I 6V A 6V 330 V 102 7 5 4 3 2 101 0 10 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time I Quadrant 100 7 0 10 Rate of Rise of Off-State Voltage (V/s) Rev.2.00, Typical Example 140 Junction Temperature (C) Critical Rate of Rise of Off-State Commutating Voltage (V/s) Latching Current (mA) Latching Current vs. Junction Temperature Breakover Voltage (Tj = tC) x 100 (%) Breakover Voltage (Tj = 25C) BCR16CM-12L 330 Test Procedure III BCR16CM-12L Package Dimensions TO-220 EIAJ Package Code JEDEC Code Mass (g) (reference value) Lead Material Conforms Conforms 2.0 Cu alloy 4.5 10.5 7.0 3.6 0.2 1.0 3.8 max 12.5 min 16 max 3.2 0.2 1.3 0.8 2.5 0.5 2.5 2.6 4.5 Symbol Dimension in Millimeters Min Typ Max A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Straight type Vinyl sack 100 Type name +A Lead form Plastic Magazine (Tube) 50 Type name +A - Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.2.00, Nov.08.2004, page 6 of 6 Standard order code example BCR16CM-12LA BCR16CM-12LA-A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. 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