1-Mbit (64K x 16) Static RAM
CY62126DV30
MoBL®
Cypress Semiconductor Corporation • 3901 North First Street • San Jose,CA 95134 • 408-943-2600
Document #: 38-05230 Rev. *G Revised May 30, 2005
Features
• Temperature Range s
—Industrial: –40°C to 85°C
—Automotive: –40°C to 125°C
• Very high speed: 45 ns
• Wide vo ltage range: 2.2 V to 3.6V
• Pin compatible with CY62126BV
• Ultra-low active power
— Typica l active current: 0.85 mA @ f = 1 MHz
— Typica l active current: 5 mA @ f = fMAX
• Ultra-low standby power
• Easy memory expansion with CE and OE features
• Automatic power-down when deselected
• Packages offered in a 48-ball FBGA, 56-lead QFN and
a 44-lead TSOP Type II
• Also available in Lead-free packages
Functional Description[1]
The CY62126DV30 is a high-performance C MOS static RAM
organized as 64K words by 16 bits. This device features
advanced circuit design to provide ultra-low active current.
This is ideal for providing More Battery Life™ (MoBL®) in
portable applications such as cellular te lephones. Th e device
also has an automatic power-down feature that significantly
reduces power consumption by 90% when addresses are not
toggling. The device can be put into standby mode reducing
power consumption by more than 99% when dese lected (CE
HIGH). The input/output pins (I/O0 through I/O15) a re placed
in a high-impedance state when: deselected (CE HIGH),
outputs are disabled (OE HIGH), both Byte High Enable and
Byte Low Enable are disabled (BHE, BLE HIGH) or during a
write operation (CE LOW and WE LOW).
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is
written into the location specified on the address pins (A0
through A15). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O8 through I/O15) is written into the location
specified on the address pins (A0 through A15).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified b y the address
pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) i s
LOW , then data from memory will appear on I/O8 to I/O15. See
the truth table at the back of this data sheet for a complete
description of read and write modes.
Note:
1. For best-practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
Logic Block Diagram
64K x 16
RAM Array I/O0–I/O7
ROW DECODER
A8
A7
A6
A5
A2
COLUMN DECODER
A11
A12
A13
A14
A15
2048 x 512
SENSE AMPS
DATA IN DRIVERS
OE
A4
A3I/O8–I/O15
CE
WE
BLE
BHE
A0
A1
A9
A10
CY62126DV30
MoBL®
Document #: 38-05230 Rev. *G Page 2 of 13
Product Portfolio
Pin Configurations[3, 4]
Notes:
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25°C.
3. NC pins are not connected to the die.
4. E3 (DNU) can be left as NC or VSS to ensure proper operation. (Expansion Pins on FBGA Package: E4 - 2M, D3 - 4M, H1 - 8M, G2 - 16M, H6 - 32M).
Product Range VCC Range (V) Speed
(ns)
Power Dissipation
Operating, ICC (mA) Standby, ISB2
(µA)f = 1 MHz f = fMAX
Min. Typ. Max. Typ.[2] Max. Typ.[2] Max. Typ.[2] Max.
CY62126DV30L Industrial 2.2 3.0 3.6 45 0.85 1.5 6.5 13 1.5 5
CY62126DV30LL Industrial 45 0.85 1.5 6.5 13 1.5 4
CY62126DV30L Industrial 2.2 3.0 3.6 55 0.85 1.5 510 1.5 5
CY62126DV30L Automotive 55 0.85 1.5 510 1.5 15
CY62126DV30LL Industrial 55 0.85 1.5 510 1.5 4
CY62126DV30L Industrial 2.2 3.0 3.6 70 0.85 1.5 510 1.5 5
CY62126DV30LL Industrial 70 0.85 1.5 510 1.5 4
WE
A11
A10
A6
A0
A3CE
I/O10
I/O8
I/O9
A4
A5
I/O11
I/O13
I/O12
I/O14
I/O15
VSS
A9
A8
OE
VSS
A7
I/O0
BHE
NC
A2
A1
BLE
VCC
I/O2
I/O1
I/O3
I/O4
I/O5I/O6
I/O7
A15
A14
A13
A12
NC
NC NC
3
26
5
4
1
D
E
B
A
C
F
G
H
FBGA (Top View)
NC
DNU
VCC
NC
WE
1
2
3
4
5
6
7
8
9
10
11
14 31
32
36
35
34
33
37
40
39
38
Top View
TSOP II (Forward)
12
13
41
44
43
42
16
15 29
30
VCC
A15
A14
A13
A12
NC
A4
A3
OE
VSS
A5
I/O15
A2
CE
I/O2
I/O0
I/O1
BHE
NC
A1
A0
18
17
20
19
I/O3
27
28
25
26
22
21 23
24 NC
VSS
I/O6
I/O4
I/O5
I/O7
A6
A7
BLE
VCC
I/O14
I/O13
I/O12
I/O11
I/O10
I/O9
I/O8
A8
A9
A10
A11
CY62126DV30
MoBL®
Document #: 38-05230 Rev. *G Page 3 of 13
Pin Configurations (continued)
28
27
26
25
24
23
22
21
20
19
18
17
16
15
43
44
45
46
47
48
49
50
51
52
53
54
55
56
1
2
3
4
5
6
7
8
9
10
11
12
13
14
42
41
40
39
38
37
36
35
34
33
32
31
30
29
BLE
I/O15
I/O14
I/O13
I/O12
VSS
VCC
I/O11
I/O10
I/O9
I/O8
A7
A6
NC
CE
I/O0
I/O1
I/O2
I/O3
VCC
VSS
I/O4
I/O5
I/O6
I/O7
WE
A0
A1
BHE
OE
A8
A9
NC
A10
A11
NC
A12
A13
A14
A15
NC
NC
NC
NC
NC
A5
NC
NC
A4
DNU
NC
NC
A3
NC
NC
A2
56-pin QFN
CY62126DV30
MoBL®
Document #: 38-05230 Rev. *G Page 4 of 13
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage to Ground
Potential..............................................................−0.3 to 3.9V
DC Voltage Applied to Outputs
in High-Z S tate[6]....................................−0.3V to VCC + 0.3V
DC Input Voltage[6] ................................−0.3V to VCC + 0.3V
Output Current into Outputs (LOW).............................20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ....................................................> 200 mA
Operating Range
Range Ambient Temperature (TA) VCC[7]
Industrial −40°C to +85°C 2.2V to 3.6V
Automotive −40°C to +125°C 2.2V to 3.6V
DC Electrical Characteristics (Over the Operating Range)
Parameter Description Test Conditions
CY62126DV30-45 CY62126DV30-55 CY62126DV30-70
UnitMin. Typ.[5] Max. Min. Typ.[5] Max. Min Typ.[5] Max.
VOH Output HIGH
Voltage 2.2 < VCC <
2.7 IOH = −0.1 mA 2.0 2.0 2.0 V
2.7 < VCC <
3.6 IOH = −1.0 mA 2.4 2.4 2.4
VOL Output LOW
Voltage 2.2 < VCC <
2.7 IOL = 0.1 mA 0.4 0.4 0.4 V
2.7 < VCC <
3.6 IOL = 2.1 mA 0.4 0.4 0.4
VIH Input HIGH
Voltage 2.2 < VCC < 2.7 1.8 VCC +
0.3 1.8 VCC
+ 0.3 1.8 VCC
+ 0.3 V
2.7 < VCC < 3.6 2.2 VCC +
0.3 2.2 VCC
+ 0.3 2.2 VCC
+ 0.3
VIL Input LOW
Voltage 2.2 < VCC < 2.7 −0.3 0.6 −0.3 0.6 −0.3 0.6 V
2.7 < VCC < 3.6 −0.3 0.8 −0.3 0.8 −0.3 0.8
IIX Input Leakage
Current GND < VI < VCC Ind’l −1+1 −1+1 −1+1 µA
Auto −4+4 µA
IOZ Output
Leakage
Current
GND < VO < VCC,
Output Disabled Ind’l −1+1 −1+1 −1+1 µA
Auto −4+4 µA
ICC VCC Operating
Supply Current f = fMAX =
1/tRC VCC = 3.6V,
IOUT = 0 mA,
CMOS level
6.5 13 510 510 mA
f = 1 MHz 0.85 1.5 0.85 1.5 0.85 1.5
ISB1 Automatic CE
Power-down
Current—
CMOS Inputs
CE > VCC − 0.2V,
VIN > VCC − 0.2V,
VIN < 0.2V,
f = fMAX (Address
and Data Only),
f = 0 (OE, WE,
BHE and BLE)
LInd’l 1.5 51.5 51.5 5µA
Auto 1.5 15
LL 1.5 41.5 41.5 4
ISB2 Automatic CE
Power-down
Current—
CMOS Inputs
CE > VCC − 0.2V,
VIN > VCC − 0.2V
or
VIN < 0.2V,
f = 0, VCC = 3.6V
LInd’l 1.5 51.5 51.5 5µA
Auto 1.5 15
LL 1.5 41.5 41.5 4
Notes:
5. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25°C.
6. VIL(min.) = −2.0V for puls e du r a ti o ns less than 20 ns., VIH(max.) = VCC + 0.75V for pulse durations less than 20 ns.
7. Full device operation requires linear ramp of VCC from 0V to VCC(min) & VCC must be stable at VCC(min) for 500 µs.
CY62126DV30
MoBL®
Document #: 38-05230 Rev. *G Page 5 of 13
AC Test Loads and Waveforms[9]
Data Retention Waveform
Notes:
8. Tested initially and after any design or proces changes that may affect these paramete rs.
9. Test condition for the 45-ns part is a load capacitance of 30 pF.
10.Full device operation requires linear VCC ramp from VDR to VCC(min.) >100 µs.
Capacitance[8]
Parameter Description Test Conditions Max. Unit
CIN Input Capacit ance TA = 25°C, f = 1 MHz
VCC = VCC(typ) 8pF
COUT Output Capacitance 8pF
Thermal Resistance
Parameter Description Test Conditions QFN TSOP FBGA Unit
θJA Thermal Resistance (Junction to Ambient)[8] Still Air, soldered on a 3 x 4.5 inch,
two-layer printed circuit board 22.08 55 76 °C/W
θJC Thermal Resistance (Junction to Case)[8] 5.03 12 11 °C/W
Data Retention Characteristics
Parameter Description Conditions Min. Typ.[2] Max. Unit
VDR VCC for Data Retention 1.5 V
ICCDR Data Retention Curren t VCC=1.5V, CE > VCC − 0.2V,
VIN > VCC − 0.2V or VIN < 0.2V LInd’l 4µA
LAuto 10
LL Ind’l 3
tCDR[8] Chip Deselect to Data
Retention Time 0ns
tR[10] Operation Recovery Time 100 µs
VCC Typ
VCC
OUTPUT
R2
50 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10% 90%
10%
OUTPUT VTH
Equivalent to: THÉ VENIN EQUIVALENT
ALL INPUT PULSES
RTH
R1
Rise TIme: 1 V/ns Fall Time: 1 V/ns
Parameters 2.5V 3.0V Unit
R1 16600 1103 Ohms
R2 15400 1554 Ohms
RTH 8000 645 Ohms
VTH 1.2 1.75 Volts
VCC(min)
VCC(min)
tCDR
VDR >1.5 V
DATA RETENTION MODE
tR
CE
VCC
CY62126DV30
MoBL®
Document #: 38-05230 Rev. *G Page 6 of 13
Switching Characteristics (Over the Operating Range)[11]
Parameter Description
CY62126DV30-45[9] CY62126DV30-55 CY62126DV30-70
UnitMin. Max. Min. Max. Min. Max.
Read Cycle
tRC Read Cycle Time 45 55 70 ns
tAA Address to Data Valid 45 55 70 ns
tOHA Data Hold from Address Change 10 10 10 ns
tACE CE LOW to Data Valid 45 55 70 ns
tDOE OE LOW to Data Valid 25 25 35 ns
tLZOE OE LOW to Low Z[12] 5 5 5 ns
tHZOE OE HIGH to High Z[12, 13] 15 20 25 ns
tLZCE CE LOW to Low Z[12] 10 10 10 ns
tHZCE CE HIGH to High Z[12, 13] 20 20 25 ns
tPU CE LOW to Power-up 0 0 0 ns
tPD CE HIGH to Power-down 45 55 70 ns
tDBE BLE/BHE LOW to Data Valid 25 25 35 ns
tLZBE BLE/BHE LOW to Low Z[12] 5 5 5 ns
tHZBE BLE/BHE HIGH to High-Z[12, 13] 15 20 25 ns
Write Cycle[14]
tWC Write Cycle Time 45 55 70 ns
tSCE CE LOW to Write End 40 40 60 ns
tAW Address Set-up to Write End 40 40 60 ns
tHA Address Hold from Write End 0 0 0 ns
tSA Address Set-up to Write Start 0 0 0 ns
tPWE WE Pulse Width 35 40 50 ns
tBW BLE/BHE LOW to Write End 40 40 60 ns
tSD Data Set-up to Write End 25 25 30 ns
tHD Data Hold from Write End 0 0 0 ns
tHZWE WE LOW to High Z[12, 13] 15 20 25 ns
tLZWE WE HIGH to Low Z[12] 10 10 5ns
Notes:
11.Test conditions a ssume signal tra nsition time of 1V/ns or less, timing reference levels of VCC(typ.)/2, input pulse levels of 0 to VCC(typ.), and ou tput loading of the
specified IOL.
12.At any given temperature and voltag e condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE.
13.tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high-impedance state.
14.The internal W rite t ime of the memor y is defined by the overlap of WE, CE = VIL, BHE and/or BL E = VIL. All signals must be ACTIVE to init iate a write and any
of these signals can terminate a write by going INACTIVE . The data inp ut set-up and hold timing should be r eferenced to t he edge of the signal tha t terminates
the write.
CY62126DV30
MoBL®
Document #: 38-05230 Rev. *G Page 7 of 13
Switching Waveforms
Read Cycle No. 1 (Address Transition Controlled)[15, 16]
Read Cycle No. 2 (OE Controlled)[16, 17]
Notes:
15.Device is continuously selected. OE, CE = VIL, BHE, BLE = VIL.
16.WE is HIGH for Read cycle.
17.Address valid prior to or coincident with CE, BHE, BLE transition LOW.
ADDRESS
DATA OUT PREVIOUS DATA VALID DATA VALID
tRC
tAA
tOHA
50%
50%
DATA VALID
t
RC
t
ACE
t
LZBE
t
LZCE
t
PU
DATA OUT HIGH IMPEDANCE IMPEDANCE
I
CC
I
SB
t
HZOE
t
HZCE
t
PD
OE
CE
HIGH
V
CC
SUPPLY
CURRENT
t
HZBE
BHE/BLE t
LZOE
ADDRESS
t
DOE
t
LZOE
tDBE
CY62126DV30
MoBL®
Document #: 38-05230 Rev. *G Page 8 of 13
Write Cycle No. 1 (WE Controlled[13, 14, 17, 18, 19]
Write Cycle No. 2 (CE Controlled)[13, 14, 17, 18, 19]
Notes:
18.Data I/O is high-impedance if OE = VIH.
19.If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state.
20.During the DON'T CARE period in the DATA I/O waveform, the I/Os are in output state and input signals should not be applied.
Switching Waveforms(continued)
tHD
tSD
tPWE
tSA
tHA
tAW
tWC
DATA I/O
ADDRESS
CE
WE
OE
tHZOE
DATAIN VALID
NOTE20
BHE/BLE tBW
tSCE
tHD
tSD
tPWE
tHA
tAW
tSCE
tWC
tHZOE
DATAIN VALID
CE
ADDRESS
WE
DATA I/O
OE
NOTE 20
BHE/BLE tBW
tSA
CY62126DV30
MoBL®
Document #: 38-05230 Rev. *G Page 9 of 13
Write Cycle No. 3 (WE Controlled, OE LOW)[18, 19]
Write Cycle No. 4 (BHE-/BLE-controlled, OE LOW)[17, 18]
Switching Waveforms(continued)
DATAIN VALID
tHD
tSD
tLZWE
tPWE
tSA
tHA
tAW
tSCE
tWC
tHZWE
CE
ADDRESS
WE
DATAI/O NOTE 20
tBW
BHE/BLE
DATA I/O
ADDRESS
t
HD
t
SD
t
SA
t
HA
t
AW
tWC
CE
WE
DATA
IN
VALID
NOTE 20
t
BW
BHE/BLE
tSCE
t
PWE
CY62126DV30
MoBL®
Document #: 38-05230 Rev. *G Page 10 of 13
Truth Table
CE WE OE BHE BLE Inputs/Outputs Mode Power
H X X X X High Z Deselect/Power-Down Standby (ISB)
L X X H H High Z Output Disabled Active (ICC)
L H L L L Data Out (I/OO–I/O15)Read Active (ICC)
L H L H L Data Out (I/OO–I/O7);
I/O8–I/O15 in High Z Read Active (ICC)
L H L L H Data Out (I/O8–I/O15);
I/O0–I/O7 in High Z Read Active (ICC)
L H H L L High Z Output Disabled Active (ICC)
L H H H L High Z Output Disabled Active (ICC)
L H H L H High Z Output Disabled Active (ICC)
L L X L L Data In (I/OO–I/O15)Write Active (ICC)
L L X H L Data In (I/OO–I/O7);
I/O8–I/O15 in High Z Write Active (ICC)
L L X L H Data In (I/O8–I/O15);
I/O0–I/O7 in High Z Write Active (ICC)
Ordering Information
Speed
(ns) Ordering Code Package
Name Package Type Operating
Range
45 CY62126DV30LL-45BVI BV48A 48-ball Fine Pitch BGA (6 mm x 8 mm x 1 mm) Industrial
CY62126DV30LL-45BVXI BV48A 48-ball Fine Pitch BGA (6 mm x 8 mm x 1 mm) (Pb-free)
CY62126DV30LL-45ZXI Z44 44-Lead TSOP Type II (Pb-free)
CY62126DV30LL-45LFXI LF56 56-pin QFN (Pb-free)
55 CY62126DV30L-55BVI BV48A 48-ball Fine Pitch BGA (6 mm x 8 mm x 1 mm) Industrial
CY62126DV30LL-55BVI BV48A 48-ball Fine Pitch BGA (6 mm x 8 mm x 1 mm)
CY62126DV30LL-55BVXI BV48A 48-ball Fine Pitch BGA (6 mm x 8 mm x 1 mm) (Pb-Free)
CY62126DV30L-55ZI Z44 44-Lead TSOP Type II
CY62126DV30LL-55ZI Z44 44-Lead TSOP Type II
CY62126DV30LL-55ZXI Z44 44-Lead TSOP Type II (Pb-Free)
CY62126DV30L-55ZSE Z44 44-Lead TSOP Type II Automotive
CY62126DV30L-55ZSXE Z44 44-Lead TSOP Type II (Pb-Free)
CY62126DV30L-55BVXE BV48A 48-ball Fine Pitch BGA (6 mm x 8 mm x 1 mm) (Pb-Free)
CY62126DV30LL-55LFXI LF56 56-pin QFN (Pb-free) Industrial
70 CY62126DV30L-70BVI BV48A 48-ball Fine Pitch BGA (6 mm x 8 mm x 1 mm) Industrial
CY62126DV30LL-70BVI BV48A 48-ball Fine Pitch BGA (6 mm x 8 mm x 1 mm)
CY62126DV30LL-70BVXI BV48A 48-ball Fine Pitch BGA (6 mm x 8 mm x 1 mm) (Pb-Free)
CY62126DV30L-70ZI Z44 44-Lead TSOP Type II
CY62126DV30LL-70ZI Z44 44-Lead TSOP Type II
CY62126DV30LL-70ZXI Z44 44-Lead TSOP Type II (Pb-Free)
CY62126DV30LL-70LFXI LF56 56-pin QFN (Pb-free)
CY62126DV30
MoBL®
Document #: 38-05230 Rev. *G Page 11 of 13
Package Diagrams
48-Lead VFBGA (6 x 8 x 1 mm) BV48A
51-85150-*B
44-pin TSOP II Z44
51-85087-*A
CY62126DV30
MoBL®
Document #: 38-05230 Rev. *G Page 12 of 13
© Cypress Semi con duct or Cor po rati on , 20 05 . The information con t a in ed he re i n is su bject to change without notice. C ypr ess S em icon ductor Corporation assumes no resp onsib ility for the u se
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypres s. Furthermore, Cypress does no t authorize i ts
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant inju ry to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Package Diagrams (continued)
MoBL is a registered tra demark, and MoBL2 and More Battery Life are trademarks of Cypress Semiconductor. All product and
company names mentioned in this document are the trademarks of their respective holders.
0.80[0.031]
7.70[0.303]
7.90[0.311]
A
C
1.00[0.039] MAX.
N
SEATING
PLANE
N
2
0.18[0.007]
0.50[0.020]
11
0.08[0.003]
0.50[0.020]
0.05[0.002] MAX.
2
(4X)
C
0.24[0.009]
0.20[0.008] REF.
0.80[0.031] MAX.
PIN1 ID
0°-12°
6.45[0.254]
8.10[0.319]
7.80[0.307]
6.55[0.258]
0.45[0.018]
0.20[0.008] R.
8.10[0.319]
7.90[0.311]
7.80[0.307]
7.70[0.303]
DIA.
0.28[0.011]
0.30[0.012]
6.55[0.258]
6.45[0.254]
0.60[0.024]
TOP VIEW BOTTOM VIEW
SIDE VIEW
E-PAD
(PAD SIZE VARY
BY DEVICE TYPE)
51-85144-*D
56-Lead QFN 8 x 8 MM LF56A
CY62126DV30
MoBL®
Document #: 38-05230 Rev. *G Page 13 of 13
Document History Page
Document Title: CY62126DV30 MoBL® 1- Mbit (64K x 16) Static RAM
Document Number: 38-05230
REV. ECN NO. Issue Date Orig. of
Change Description of Change
** 117689 08/27/02 JUI New Data Sheet
*A 127313 06/13/03 MPR Changed From Advanced S tatus to Preliminary.
Changed ISB2 to 5 µA (L), 4 µA (LL)
Changed ICCDR to 4 µA (L), 3 µA (LL)
Changed CIN from 6 pF to 8 pF
*B 128340 07/22/03 JUI Changed from Preliminary to Final
Add 70-ns speed, updated ordering information
*C 129002 08/29/03 CDY Changed ICC 1 MHz typ from 0.5 mA to 0.85 mA
*D 238050 See ECN AJU Fixed typo: Changed tDBE from 70 ns to 35 ns
*E 316039 See ECN PCI Added 45-ns Speed Bin in AC, DC and Ordering Information tables
Added Footnote #8 on page #4
Added Pb-Free package ordering information on page # 9
Changed 44-pin TSOP-II package name from Z44 to ZS44
*F 335861 See ECN SYT Added Temperature Ranges in the Features Section on Page # 1
Added Automotive Product Information for CY62126DV30-L for 55 ns
Added ISB1 and ISB2 va lues for Automotive range of CY62126DV30-L for 55 ns
Added Automotive Information for ICCDR in the Data Retention Characteristics table
Added Pb-Free packages in the ordering information
Changed 44-pin TSOP-II package name from ZS44 to Z44
*G 357256 See ECN PCI Added Pin Configuration and Package Diagram for 56-Lead QFN Package
Updated Thermal Characteristics and Ordering Information Table
Added Automotive Specs for IIX and IOZ in the DC Electrical Characteristics table on
Page# 4
