SD1224-02
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DESCRIPTION:
The SD1224-02 is an epitaxial silicon NPN planar transistor designed
primarily for 28 V FM Class C RF amplifiers utilized in ground station
transmitters. This device utilizes ballasted emitter resistors and
improved metallization systems to achieve optimum load mismatch
capability.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 65 V
VCEO Collector-Emitter Voltage 35 V
VCES Collector-Emitter Voltage 65 V
VEBO Emitter-Base Voltage 4.0 V
IC Device Current 5.0 A
PDISS Power Dissipation 60 W
TJ Junction Temperature +200 °C
TSTG Storage Temperature -65 to +150 °C
Thermal Data
RTH(j-c) Junction-Case Thermal Resistance 2.9 °C/W
Features
• 175 MHz
• 28 VOLTS
• CLASS C
• COMMON EMITTER
• EFFICIENCY 60% MIN.
• POUT = 40 W MIN.
• GP = 7.6 dB GAIN
RF AND MICROWAVE TRANSISTORS
VHF FM APPLICATIONS