SD1224-02
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factor
y
direct.
DESCRIPTION:
The SD1224-02 is an epitaxial silicon NPN planar transistor designed
primarily for 28 V FM Class C RF amplifiers utilized in ground station
transmitters. This device utilizes ballasted emitter resistors and
improved metallization systems to achieve optimum load mismatch
capability.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 65 V
VCEO Collector-Emitter Voltage 35 V
VCES Collector-Emitter Voltage 65 V
VEBO Emitter-Base Voltage 4.0 V
IC Device Current 5.0 A
PDISS Power Dissipation 60 W
TJ Junction Temperature +200 °C
TSTG Storage Temperature -65 to +150 °C
Thermal Data
RTH(j-c) Junction-Case Thermal Resistance 2.9 °C/W
Features
175 MHz
28 VOLTS
CLASS C
COMMON EMITTER
EFFICIENCY 60% MIN.
POUT = 40 W MIN.
GP = 7.6 dB GAIN
RF AND MICROWAVE TRANSISTORS
VHF FM APPLICATIONS
SD1224-02
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factor
y
direct.
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC Value
Symbol Test Conditions
Min. Typ. Max.
Units
BVCBO IC = 200 mA IB = 0 mA 65 V
BVCES IC = 200 mA VBE = 0 V 65 V
BVCEO IC = 100 mA IB = 0 mA 35 V
BVEBO IE = 10 mA IC = 0 mA 4.0 V
ICBO VCB = 30 V IE = 0 mA 1 mA
hFE VCE = 5 V IC = 500 mA 20 200
DYNAMIC Value
Symbol Test Conditions
Min. Typ. Max.
Units
POUT f = 175 MHz PIN = 7.0 W VCE = 28 V 40 W
ηC f = 175 MHz PIN = 7.0 W VCE = 28 V 60 %
GP f = 175 MHz PIN = 7.0 W VCE = 28 V 7.6 dB
COB f = 1 MHz VCB = 30 V 65 pF
Revision A, October 2009
SD1224-02
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factor
y
direct.
TEST CIRCUIT
SD1224-02
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factor
y
direct.
PACKAGE MECHANICAL DATA