MP4305 TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) MP4305 Industrial Applications High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. * Small package by full molding (SIP 12 pin) * High collector power dissipation (4 devices operation) * High collector current: IC (DC) = -5 A (max) Unit: mm : PT = 4.4 W (Ta = 25C) * High DC current gain: hFE = 2000 (min) (VCE = -5 V, IC = -3 A) * Diode included for absorbing fly-back voltage. Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -100 V Collector-emitter voltage VCEO -100 V Emitter-base voltage VEBO -6 V DC IC -5 Pulse ICP -8 IB -0.5 A PC 2.2 W PT 4.4 W Tj 150 C Tstg -55 to 150 C Collector current Continuous base current Collector power dissipation (1 device operation) Collector power dissipation (4 devices operation) Junction temperature Storage temperature range A JEDEC JEITA TOSHIBA 2-32C1E Weight: 3.9 g (typ.) Array Configuration R1 R2 6 7 5 1 2 8 3 4 12 9 10 11 R1 4.5 k R2 300 1 2002-11-20 MP4305 Thermal Characteristics Characteristics Thermal resistance of junction to ambient Symbol Max Unit Rth (j-a) 28.4 C/W TL 260 C (4 devices operation, Ta = 25C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = -100 V, IE = 0 A -10 A Collector cut-off current ICEO VCE = -100 V, IB = 0 A -10 A Emitter cut-off current IEBO VEB = -6 V, IC = 0 A -0.6 -2.0 mA Collector-base breakdown voltage V (BR) CBO IC = -1 mA, IE = 0 A -100 V Collector-emitter breakdown voltage V (BR) CEO IC = -10 mA, IB = 0 A -100 V hFE (1) VCE = -5 V, IC = -3 A 2000 15000 hFE (2) VCE = -5 V, IC = -5 A 1000 Collector-emitter VCE (sat) IC = -3 A, IB = -6 mA -1.5 Base-emitter VBE (sat) IC = -3 A, IB = -6 mA -2.0 VCE = -2 V, IC = -0.5 A 40 MHz VCB = -10 V, IE = 0 A, f = 1 MHz 55 pF 0.3 2.0 0.4 Transition frequency Collector output capacitance Cob ton IB1 Turn-on time fT Switching time Storage time tstg Input 20 s Output IB2 10 Saturation voltage IB2 DC current gain IB1 V s VCC = -30 V Fall time tf -IB1 = IB2 = 6 mA, duty cycle 1% Emitter-Collector Diode Ratings and Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Maximum forward current IFM 3 A Surge current IFSM t = 1 s, 1 shot 6 A IF = 1 A, IB = 0 A 2.0 V 1.0 s 8 C Forward voltage VF Reverse recovery time trr Reverse recovery charge Qrr IF = 3 A, VBE = 3 V, dIF/dt = -50 A/s 2 2002-11-20 MP4305 Flyback-Diode Rating and Characteristics (Ta = 25C) Characteristics Maximum forward current Symbol Test Condition Min Typ. Max Unit IFM 3 A Reverse current IR VR = 110 V 0.4 A Reverse voltage VR IR = 100 A 100 V Forward voltage VF IF = 1 A 1.5 V 3 2002-11-20 MP4305 IC - VCE IC - VBE -8 -8 -10 -3 (A) IC -4 -0.7 -0.5 Collector current Collector current VCE = -5 V Ta = 25C -1.0 IC (A) -6 Common emitter Common emitter -1.5 -0.3 -2 IB = -0.2 mA -6 -4 -2 Ta = 100C -55 25 0 0 -2 -4 -6 -8 Collector-emitter voltage VCE 0 0 -10 -0.8 (V) -1.6 -2.4 -3.2 Base-emitter voltage VBE hFE - IC -4.0 (V) VCE - IB 30000 Common emitter -2.8 5000 3000 Ta = 100C 25 -55 1000 500 200 -0.05 -0.1 Common emitter (V) 10000 Collector-emitter voltage VCE DC current gain hFE VCE = -5 V -0.3 -1 Collector current -3 IC -10 -20 Ta = 25C -2.4 IC = -8 A -2.0 -7 -6 -1.6 -5 -4 -3 -2 -1 -0.5 -0.1 -1.2 -0.8 -0.4 -0.1 (A) -1 -10 Base current VCE (sat) - IC -1000 (mA) VBE (sat) - IC -10 -10 Common emitter Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) -100 IB IC/IB = 500 -5 -3 Ta = -55C -1 25 -0.5 100 -0.3 -0.1 -0.3 -1 Collector current -3 IC Common emitter -3 Ta = -55C 25 -1 (A) 100 -0.5 -0.3 -0.1 -10 IC/IB = 500 -5 -0.3 -1 Collector current 4 -3 IC -10 (A) 2002-11-20 MP4305 rth - tw Transient thermal resistance rth (C/W) 300 100 Curves should be applied in thermal limited area. (single nonrepetitive pulse) Below figure show thermal resistance per 1 unit versus pulse width. (4) 30 (1) (3) (2) 10 3 -No heat sink and attached on a circuit board(1) 1 device operation (2) 2 devices operation (3) 3 devices operation Circuit board (4) 4 devices operation 1 0.3 0.001 0.01 0.1 1 10 Pulse width tw 100 1000 (s) PT - Ta Safe Operating Area -20 10 (W) -10 IC max (pulsed)* 10 ms* 1 ms* 100 s* -1 -0.5 -0.3 8 6 (4) 4 Circuit board (3) (2) 2 (1) 0 0 -0.1 40 80 120 160 200 Ambient temperature Ta (C) -0.05 VCEO max -30 Collector-emitter voltage VCE -100 -300 (V) Tj - PT 200 (C) *: Single nonrepetitive pulse Ta = 25C -0.03 Curves must be derated linearly with increase in temperature. -0.01 -1 -3 -10 Junction temperature increase Tj Collector current IC (A) -3 Total power dissipation PT -5 Attached on a circuit board (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation 160 Circuit board (2) (1) (4) 80 Attached on a circuit board (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation 40 0 0 1 2 3 Total power dissipation PT 5 (3) 120 4 5 (W) 2002-11-20 MP4305 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-11-20