MP4305
2002-11-20
1
TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1)
MP4305
High Power Switching Applications.
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching.
• Small package by full molding (SIP 12 pin)
• High collector power dissipation (4 devices operation)
: PT = 4.4 W (Ta = 25°C)
• High collector current: IC (DC) = −5 A (max)
• High DC current gain: hFE = 2000 (min) (VCE = −5 V, IC = −3 A)
• Diode included for absorbing fly-back voltage.
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO −100 V
Collector-emitter voltage VCEO −100 V
Emitter-base voltage VEBO −6 V
DC IC −5
Collector current
Pulse ICP −8
A
Continuous base current IB −0.5 A
Collector power dissipation
(1 device operation)
PC 2.2 W
Collector power dissipation
(4 devices operation)
PT 4.4 W
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C
Array Configuration
Industrial Applications
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-32C1E
Weight: 3.9 g (typ.)
2 4 9
R1 ≈ 4.5 kΩ R2 ≈ 300 Ω
1
5 8
R1 R2
12
11
6 7
3 10
MP4305
2002-11-20
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Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance of junction to
ambient
(4 devices operation, Ta = 25°C)
ΣRth (j-a) 28.4 °C/W
Maximum lead temperature for
soldering purposes
(3.2 mm from case for 10 s)
TL 260 °C
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO VCB = −100 V, IE = 0 A ― ― −10 µA
Collector cut-off current ICEO VCE = −100 V, IB = 0 A ― ― −10 µA
Emitter cut-off current IEBO VEB = −6 V, IC = 0 A −0.6 ― −2.0 mA
Collector-base breakdown voltage V (BR) CBO IC = −1 mA, IE = 0 A −100 ― ― V
Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 A −100 ― ― V
hFE (1) V
CE = −5 V, IC = −3 A 2000 ― 15000
DC current gain
hFE (2) V
CE = −5 V, IC = −5 A 1000 ― ―
―
Collector-emitter VCE (sat) IC = −3 A, IB = −6 mA ― ― −1.5
Saturation voltage
Base-emitter VBE (sat) IC = −3 A, IB = −6 mA ― ― −2.0
V
Transition frequency fT VCE = −2 V, IC = −0.5 A ― 40 ― MHz
Collector output capacitance Cob VCB = −10 V, IE = 0 A, f = 1 MHz ― 55 ― pF
Turn-on time ton ― 0.3 ―
Storage time tstg ― 2.0 ―
Switching time
Fall time tf
−IB1 = IB2 = 6 mA, duty cycle ≤ 1%
― 0.4 ―
µs
Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Maximum forward current IFM ― ― ― 3 A
Surge current IFSM t = 1 s, 1 shot ― ― 6 A
Forward voltage VF IF = 1 A, IB = 0 A ― ― 2.0 V
Reverse recovery time trr ― 1.0 ― µs
Reverse recovery charge Qrr
IF = 3 A, VBE = 3 V, dIF/dt = −50 A/µs
― 8 ― µC
IB1
VCC = −30 V
Output
10 Ω
IB1
IB2
Input
20 µs
IB2
MP4305
2002-11-20
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Flyback-Diode Rating and Charac teristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Maximum forward current IFM ― ― ― 3 A
Reverse current IR VR = 110 V ― ― 0.4 µA
Reverse voltage VR IR = 100 µA 100 ― ― V
Forward voltage VF IF = 1 A ― ― 1.5 V
MP4305
2002-11-20
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Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
Base-emitter voltage VBE (V)
IC – VBE
Collector current IC (A)
Collector current IC (A)
hFE – IC
DC current gain hFE
Base current IB (mA)
VCE – IB
Collector-emitter voltage VCE (V)
Collector current IC (A)
VCE (sat) – IC
Collector-emitter saturation voltage
VCE (sat) (V)
Collector current IC (A)
VBE (sat) – IC
Base-emitter saturation voltage
VBE (sat) (V)
0
0
−2
−4
−6
−8
−0.8 −1.6 −2.4 −3.2 −4.0
Common emitter
VCE = −5 V
25
−55
Ta = 100°C
0
0
−0.5
IB = −0.2 mA
Common emitter
Ta = 25°C
−0.3
−1.0
−1.5
−2
−4
−6
−8
−2 −4 −6 −8 −10
−0.7
−3 −10
200
−0.05
25
Ta = 100°C
−55
−0.1 −0.3 −1 −3 −10 −20
500
1000
3000
5000
10000
30000
Common emitter
VCE = −5 V
Common emitter
Ta = 25°C
−0.4
−0.1
−5
IC = −8 A
−7
−6
−2
−1
−0.5
−4
−3
−0.1
−1 −10 −100 −1000
−0.8
−1.2
−1.6
−2.0
−2.4
−2.8
−0.1
−0.3
Common emitter
IC/IB = 500
−0.5
−1
−3
−5
−10
−0.3 −1 −3 −10
25
Ta = −55°C
100
−0.3
−0.3
Common emitter
IC/IB = 500
−0.1 −1 −3 −10
−0.5
−1
−3
−5
−10
25
Ta = −55°C
100
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2002-11-20
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Ambient temperature Ta (°C)
PT – Ta
Total power dissipation PT (W)
Total power dissipation PT (W)
∆Tj – PT
Junction temperature increase ∆Tj (°C)
Pulse width tw (s)
Collector-emitter voltage VCE (V)
Safe Operating Area
Collector current IC (A)
0
0
Circuit board
Attached on a circuit board
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
40
80
120
160
200
1 2 3 4 5
(4)
(2)
(1) (3)
rth – tw
Transient thermal resistance rth (°C/W)
0.001 0.01 0.1 1 10 100 1000
0.3
-No heat sink and attached on a circuit board-
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation Circuit board
Curves should be applied in thermal
limited area. (single nonrepetitive pulse)
Below figure show thermal resistance per
1 unit versus pulse width.
(4)
(2)
(1)
1
3
10
30
100
300
(3)
0
0
Attached on a circuit board
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
Circuit board
2
4
6
8
10
40 80 120 160 200
(4)
(2)
(1)
(3)
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
−0.01
−1
−3 −10 −30 −100 −300
−0.03
−0.05
−0.1
−0.3
−0.5
−1
−3
−5
−10
−20
IC max (pulsed)*
10 ms*
1 ms* 100 µs*
VCEO max
MP4305
2002-11-20
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000707EA
A
RESTRICTIONS O N PRODUCT USE
