High Voltage Transistors
MAXIMUM RATINGS
Rating Symbol 2N6515 2N6517
2N6520 Unit
Collector–Emitter Voltage VCEO 250 350 Vdc
Collector–Base Voltage VCBO 250 350 Vdc
Emitter–Base Voltage
2N6515, 2N6516, 2N6517
2N6519, 2N6520
VEBO 6.0
5.0
Vdc
Base Current IB250 mAdc
Collector Current –
Continuous IC500 mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD625
5.0 mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD1.5
12 Watts
mW/°C
Operating and Storage
Junction
Temperature Range
TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RJA 200 °C/W
Thermal Resistance, Junction to Case RJC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0 ) 2N6515
2N6517, 2N6520
V(BR)CEO 250
350 –
–
Vdc
Collector–Base Breakdown Voltage
(IC = 100 µAdc, IE = 0 ) 2N6515
2N6517, 2N6520
V(BR)CBO 250
350 –
–
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 µAdc, IC = 0) 2N6515, 2N6517
2N6520
V(BR)EBO 6.0
5.0 –
–
Vdc
1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
October, 2001 – Rev. 3 97 Publication Order Number:
2N6515/D
NPN
2N6515
2N6517
PNP
2N6520
CASE 29–04, STYLE 1
T O–92 (TO–226AA)
123
Voltage and current are negative
for PNP transistors
COLLECTOR
3
2
BASE
1
EMITTER COLLECTOR
3
2
BASE
1
EMITTER
NPN
PNP
NPN 2N6515 2N6517 PNP 2N6520
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS (Continued)
Collector Cutoff Current
(VCB = 150 Vdc, IE = 0) 2N6515
(VCB = 250 Vdc, IE = 0) 2N6517, 2N6520
ICBO –
–50
50
nAdc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0) 2N6515, 2N6517
(VEB = 4.0 Vdc, IC = 0 ) 2N6520
IEBO –
–50
50
nAdc
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc) 2N6515
2N6517, 2N6520
(IC = 10 mAdc, VCE = 10 Vdc) 2N6515
2N6517, 2N6520
(IC = 30 mAdc, VCE = 10 Vdc) 2N6515
2N6517, 2N6520
(IC = 50 mAdc, VCE = 10 Vdc) 2N6515
2N6517, 2N6520
(IC = 100 mAdc, V CE = 10 Vdc) 2N6515
2N6517, 2N6520
hFE 35
20
50
30
50
30
45
20
25
15
–
–
–
–
300
200
220
200
–
–
–
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat) –
–
–
–
0.30
0.35
0.50
1.0
Vdc
Base–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
VBE(sat) –
–
–
0.75
0.85
0.90
Vdc
Base–Emitter On Voltage
(IC = 100 mAdc, V CE = 10 Vdc) VBE(on) – 2.0 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product(1)
(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) fT40 200 MHz
Collector–Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Ccb – 6.0 pF
Emitter–Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2N6515, 2N6517
2N6520
Ceb –
–80
100
pF
SWITCHING CHARACTERISTICS
Turn–On Time
(VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc) ton – 200 µs
Turn–Off Time
(VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc) toff – 3.5 µs
1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.
NPN 2N6515 2N6517 PNP 2N6520
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Figure 1. DC Current Gain – NPN 2N6515
IC, COLLECTOR CURRENT (mA)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
hFE, DC CURRENT GAIN
200
100
20
30
50
70
VCE = 10 V TJ = 125°C
25°C
-55°C
Figure 2. DC Current Gain – NPN 2N6517
IC, COLLECTOR CURRENT (mA)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
200
100
10
20
50
70
VCE = 10 V TJ = 125°C
25°C
-55°C
IC, COLLECTOR CURRENT (mA)
-100-1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70
VCE = -10 V TJ = 125°C
25°C
-55°C
IC, COLLECTOR CURRENT (mA)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
100
20
30
50
70
IC, COLLECTOR CURRENT (mA)
-100-1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70
f, CURRENT-GAIN  BANDWIDTH PRODUCT (MHz)
T
f, CURRENT-GAIN  BANDWIDTH PRODUCT (MHz)
T
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
10
100
20
30
50
70
10
TJ = 25°C
VCE = 20 V
f = 20 MHz
TJ = 25°C
VCE = -20 V
f = 20 MHz
30
200
100
10
20
50
70
30
Figure 3. DC Current Gain – PNP 2N6520
Figure 4. Current–Gain – Bandwidth Product – NPN
2N6515, 2N6517 Figure 5. Current–Gain – Bandwidth Product – PNP
2N6520
NPN 2N6515 2N6517 PNP 2N6520
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Figure 6. “On” Voltages – NPN 2N6515, 2N6517 Figure 7. “On” Voltages – PNP 2N6520
Figure 8. Temperature Coefficients – NPN 2N6515,
2N6517 Figure 9. Temperature Coefficients – PNP 2N6520
IC, COLLECTOR CURRENT (mA)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
V, VOLTAGE (VOLTS)
1.4
1.2
0
0.6
0.8
1.0
NPN
IC, COLLECTOR CURRENT (mA)
-100-1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70
IC, COLLECTOR CURRENT (mA)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
2.5
IC, COLLECTOR CURRENT (mA)
-100-1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70
Figure 10. Capacitance – NPN 2N6515, 2N6517
VR, REVERSE VOLTAGE (VOLTS)
2000.2 0.5 1.0 2.0 5.0 10 20 50 100
100
2.0
3.0
5.0
70
VR, REVERSE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
1.0
V, VOLTAGE (VOLTS)
0.4
0.2
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
VCE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 5.0
-1.4
-1.2
0
-0.6
-0.8
-1.0
-0.4
-0.2
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = -10 V
VCE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 5.0
RV, TEMPERATURE COEFFICIENTS (mV/ C)°
θ
RV, TEMPERATURE COEFFICIENTS (mV/ C)°
θ
2.0
1.5
1.0
0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
RθVC for VCE(sat)
RθVB for VBE
25°C to 125°C
-55°C to 25°C
-55°C to 125°C
IC
IB 10
RθVC for VCE(sat)
RθVB for VBE
25°C to 125°C
-55°C to 25°C
-55°C to 125°C
IC
IB 10
C, CAPACITANCE (pF)
7.0
10
20
30
50
-200-0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100
TJ = 25°C TJ = 25°C
Ccb
Ceb
Ccb
Ceb
2.5
2.0
1.5
1.0
0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
100
2.0
3.0
5.0
70
1.0
7.0
10
20
30
50
Figure 11. Capacitance – PNP 2N6520
NPN 2N6515 2N6517 PNP 2N6520
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Figure 12. Turn–On Time – NPN 2N6515, 2N6517
IC, COLLECTOR CURRENT (mA)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
t, TIME (ns)
1.0k
20
10
IC, COLLECTOR CURRENT (mA)
-100-1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70
IC, COLLECTOR CURRENT (mA)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
IC, COLLECTOR CURRENT (mA)
-100-1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70
30
50
70
100
200
300
500
700
t, TIME (ns)
td @ VBE(off) = 2.0 V
tr
VCE(off) = 100 V
IC/IB = 5.0
TJ = 25°C
td @ VBE(off) = 2.0 V
tr
VCE(off) = -100 V
IC/IB = 5.0
TJ = 25°C
t, TIME (ns)
10k
100
200
300
500
700
1.0k
2.0k
3.0k
5.0k
7.0k
20
30
50
70
100
200
300
500
700
1.0k
2.0k
VCE(off) = 100 V
IC/IB = 5.0
IB1 = IB2
TJ = 25°C
VCE(off) = -100 V
IC/IB = 5.0
IB1 = IB2
TJ = 25°C
ts
tf
ts
tf
1.0k
20
10
30
50
70
100
200
300
500
700
Figure 13. Turn–On Time – PNP 2N6520
Figure 14. Turn–Off Time – NPN 2N6515, 2N6517 Figure 15. Turn–Off Time – PNP 2N6520
NPN 2N6515 2N6517 PNP 2N6520
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Figure 16. Switching Time Test Circuit
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
10k0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k
t, TIME (ms)
Figure 17. Thermal Response
500
200
100
50
20
10
5.0
2.0
1.0
0.5
IC, COLLECTOR CURRENT (mA)
0.5 1.0 2.0 5.0 10 20 50 100 200 500
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 18. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data
FIGURE A
tP
PPPP
t1
1/f
DUTYCYCLE t1f t1
tP
PEAK PULSE POWER = PP
TA = 25°C
1.0 ms
10 µs
TC = 25°C
100 µs
100 ms
+10.8 V
-9.2 V
+VCC
2.2 k 20 k
50
50 Ω SAMPLING SCOPE
1/2MSD7000
1.0 k
VCC ADJUSTED
FOR VCE(off) = 100 V
APPROXIMATELY
-1.35 V (ADJUST FOR V(BE)off = 2.0 V)
PULSE WIDTH ≈ 100 µs
tr, tf ≤ 5.0 ns
DUTY CYCLE ≤ 1.0%
FOR PNP TEST CIRCUIT,
REVERSE ALL VOLTAGE POLARITIES
D = 0.5
0.2
0.1 0.05 SINGLE PULSE
SINGLE PULSE
ZθJC(t) = r(t) • RθJC TJ(pk) - TC = P(pk) ZθJC(t)
ZθJA(t) = r(t) • RθJA TJ(pk) - TA = P(pk) ZθJA(t)
CURRENT LIMIT
THERMAL LIMIT
(PULSE CURVES @ TC = 25°C)
SECOND BREAKDOWN LIMIT
CURVES APPLY
BELOW RATED VCEO
2N6515
2N6517, 2N6520