VS-54-94-104MT..KPbF Series www.vishay.com Vishay Semiconductors Three Phase AC Switch (Power Modules), 50 A to 100 A FEATURES * Package fully compatible with the industry standard INT-A-PAK power modules series * High thermal conductivity package, electrically insulated case * Outstanding number of power encapsulated components * Excellent power volume ratio * 4000 VRMS isolating voltage * UL E78996 approved MT-K * Designed and qualified for industrial level * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY IO 50 A to 100 A VRRM 800 V to 1600 V Package MT-K Circuit Three phase AC switch DESCRIPTION A range of extremely compact, encapsulated three phase AC switches offering efficient and reliable operation. They are intended for use in general purpose and heavy duty applications as control motor starter. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IO IFSM I2t VALUES 54MT.K VALUES 94MT.K VALUES 104MT.K UNITS 50 90 100 A TC 80 80 80 C 50 Hz 390 950 1130 60 Hz 410 1000 1180 50 Hz 770 4525 6380 60 Hz 700 4130 5830 7700 45250 63800 I2t A A2s A2s VRRM Range 800 to 1600 V TStg Range -40 to 125 C TJ Range -40 to 125 C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 80 100 120 140 160 80 100 120 140 160 800 1000 1200 1400 1600 800 1000 1200 1400 1600 VS-54MT..K VS-94/104MT..K VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 900 1100 1300 1500 1700 900 1100 1300 1500 1700 VDRM, MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE, GATE OPEN CIRCUIT V 800 1000 1200 1400 1600 800 1000 1200 1400 1600 IRRM/IDRM, MAXIMUM AT TJ = 125 C mA 20 (1) 40 (1) Note (1) For single AC switch Revision: 03-Mar-14 Document Number: 94351 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-54-94-104MT..KPbF Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER Maximum IRMS output current at case temperature SYMBOL IO TEST CONDITIONS For all conduction angle t = 10 ms Maximum peak, one-cycle forward, non-repetitive on state surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t VALUES 54MT.K VALUES 94MT.K VALUES 104MT.K 50 90 100 A 80 80 80 C No voltage reapplied 390 950 1130 410 1000 1180 100 % VRRM reapplied 330 800 950 345 840 1000 770 4525 6380 700 4130 5830 540 3200 4510 No voltage reapplied Initial TJ = TJ maximum 100 % VRRM reapplied 500 2920 4120 t = 0.1 ms to 10 ms, no voltage reapplied 7700 45 250 63 800 Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum 1.16 0.99 0.99 High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ maximum 1.44 1.19 1.15 UNITS A A2s A2s V Low level value on-state slope resistance rt1 16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum 12.54 4.16 3.90 High level value on-state slope resistance rt2 (I > x IT(AV)), TJ maximum 11.00 3.56 3.48 Maximum on-state voltage drop VTM Ipk = 150 A, TJ = 25 C tp = 400 s single junction 2.68 1.55 1.53 Maximum non-repetitive rate of rise of turned on current dI/dt TJ = 25 C, from 0.67 VDRM, ITM = x IT(AV), Ig = 500 mA, tr < 0.5 s, tp > 6 s 150 m Maximum holding current IH TJ = 25 C, anode supply = 6 V, resistive load, grate open circuit 200 Maximum latching current IL TJ = 25 C, anode supply = 6 V, resistive load 400 V A/s mA BLOCKING PARAMETER RMS isolation voltage Maximum critical rate of rise of off-state voltage SYMBOL VINS dV/dt (1) TEST CONDITIONS 54MT.K 94MT.K 104MT.K UNITS TJ = 25 C all terminal shorted f = 50 Hz, t = 1 s 4000 V TJ = TJ maximum, linear to 0.67 VDRM, gate open circuit 500 V/s Note (1) Available with dV/dt = 1000 V/s, to complete code add S90 i. e. 104MT160KBS90 TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage Maximum required DC gate voltage to trigger Maximum required DC gate current to trigger Maximum gate voltage that will not trigger Maximum gate current that will not trigger SYMBOL PGM PG(AV) IGM TEST CONDITIONS TJ = TJ maximum - VGT VGT IGT 54MT.K 94MT.K 10 2.5 2.5 104MT.K UNITS W A 10 TJ = 40 C TJ = 25 C TJ = 125 C TJ = -40 C TJ = 25 C TJ = 125 C Anode supply = 6 V, resistive load VGD 4.0 2.5 1.7 270 150 80 V mA 0.25 V 6 mA TJ = TJ maximum, rated VDRM applied IGD Revision: 03-Mar-14 Document Number: 94351 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-54-94-104MT..KPbF Series www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating and storage temperature range 54MT.K TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, case to heatsink Mounting torque 100 % TEST CONDITIONS to heatsink Approximate weight UNITS C DC operation per single AC switch 0.52 0.39 0.34 DC operation per junction 1.05 0.77 0.69 180 C sine cond. angle per single AC switch 0.56 0.40 0.36 180 C sine cond. angle per junction 1.12 0.80 0.72 K/W 0.03 4 to 6 A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. to terminal 104MT.K -40 to 125 Per module Mounting surface smooth, flat and grased RthCS 94MT.K Nm 3 to 4 225 g R CONDUCTION PER JUNCTION SINUSOIDAL CONDUCTION AT TJ MAXIMUM DEVICES RECTANGULAR CONDUCTION AT TJ MAXIMUM UNITS 180 120 90 60 30 180 120 90 60 30 54MT.K 0.072 0.085 0.108 0.152 0.233 0.055 0.091 0.117 0.157 0.236 94MT.K 0.033 0.039 0.051 0.069 0.099 0.027 0.044 0.055 0.071 0.100 104MT.K 0.027 0.033 0.042 0.057 0.081 0.023 0.037 0.046 0.059 0.082 K/W Note * Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Instantaneous On-State Current (A) Maximum Allowable Case Temperature (C) 130 54MT..K Series Device fully turned-on 120 110 100 90 Per single AC switch 80 IRMS ~ 70 For all conduction angles 60 0 10 20 30 40 50 RMS Output Current (A) Fig. 1 - Current Ratings Characteristic 60 1000 TJ = 25 C TJ = 125 C 100 10 54MT..K Series Per junction 1 0 1 2 3 4 5 6 Instantaneous On-State Voltage (V) Fig. 2 - Forward Voltage Drop Characteristics Revision: 03-Mar-14 Document Number: 94351 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-54-94-104MT..KPbF Series www.vishay.com K/ W 200 R 50 0.3 - Conduction angle 100 W W W K/ O 150 250 K/ K/ 05 0. O 200 1 0.2 = 250 0. 300 SA 300 180 120 90 60 30 R th 54MT..K Series TJ = 125 C Device fully turned-on Maximum Total Power Loss (W) (Per Total Module) 350 350 Maximum Total Power Loss (W) (Per Total Module) Vishay Semiconductors 0.5 K/W 0.7 K /W 1.0 K /W 150 100 2.0 K/W 50 0 0 0 10 20 30 40 50 0 60 25 50 100 75 125 Maximum Allowable Ambient Temperature (C) RMS Output Current (A) Fig. 3 - Total Power Loss Characteristics At any rated load condition and with rated VRRM applied following surge. Initial TJ = 125 C at 60 Hz 0.0083 s at 50 Hz 0.0100 s Peak Half Sine Wave On-State Current (A) 325 300 275 250 225 200 54MT..K Series Per junction 175 130 Maximum Allowable Case Temperature (C) 350 110 100 90 Per single AC switch IRMS ~ 80 70 60 For all conduction angles 150 50 1 10 100 0 20 40 60 80 100 RMS Output Current (A) Fig. 4 - Maximum Non-Repetitive Surge Current Fig. 6 - Current Ratings Characteristic Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 125 C No voltage reapplied Rated VRRM reapplied 350 300 250 200 54MT..K Series Per junction 150 0.01 0.1 1 Instantaneous On-State Current (A) Number of Equal Amplitude Half Cycle Current Pulses (N) 400 Peak Half Sine Wave On-State Current (A) 94MT..K Series Device fully turned-on 120 120 1000 100 TJ = 25 C 10 TJ = 125 C 94MT..K Series Per junction 1 0 1 2 3 4 5 Pulse Train Duration (s) Instantaneous On-State Voltage (V) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 7 - Forward Voltage Drop Characteristics Revision: 03-Mar-14 Document Number: 94351 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-54-94-104MT..KPbF Series www.vishay.com Vishay Semiconductors 450 250 K/W 100 0.5 K/W 0.7 K /W 1.0 K /W 50 1.5 K/W 200 150 R Maximum Total Power Loss (W) (Per Total Module) 0.3 - 50 300 W 100 K/ Conduction angle 150 03 200 W 0. O K/ = O 250 15 SA 300 0. 350 W 180 120 90 60 30 K/ 350 R th 400 400 05 94MT..K Series TJ = 125 C Device fully turned-on 0. Maximum Total Power Loss (W) (Per Total Module) 450 0 0 0 10 20 30 40 50 60 70 80 90 100 0 25 RMS Output Current (A) 50 75 100 125 Maximum Allowable Ambient Temperature (C) Fig. 8 - Total Power Loss Characteristics At any rated load condition and with rated VRRM applied following surge. Initial TJ = 125 C at 60 Hz 0.0083 s at 50 Hz 0.0100 s Peak Half Sine Wave On-State Current (A) 700 650 600 550 500 450 94MT..K Series Per junction 400 130 Maximum Allowable Case Temperature (C) 750 110 100 90 Per single AC switch IRMS ~ 80 70 For all conduction angles 350 60 1 10 100 0 20 40 60 100 80 RMS Output Current (A) Fig. 9 - Maximum Non-Repetitive Surge Current Fig. 11 - Current Ratings Characteristic Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 125 C No voltage reapplied Rated VRRM reapplied 900 800 700 600 500 400 94MT..K Series Per junction 300 0.01 0.1 1 Instantaneous On-State Current (A) Number of Equal Amplitude Half Cycle Current Pulses (N) 1000 Peak Half Sine Wave On-State Current (A) 104MT..K Series Device fully turned-on 120 120 1000 100 TJ = 25 C TJ = 125 C 10 104MT..K Series Per junction 1 0 1 2 3 4 5 Pulse Train Duration (s) Instantaneous On-State Voltage (V) Fig. 10 - Maximum Non-Repetitive Surge Current Fig. 12 - Forward Voltage Drop Characteristics Revision: 03-Mar-14 Document Number: 94351 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-54-94-104MT..KPbF Series www.vishay.com Vishay Semiconductors 500 Maximum Total Power Loss (W) (Per Total Module) 50 0 0.3 250 K/W R 100 W 300 - Conduction angle 150 K/ W K/ 200 15 03 0. O O 250 0. 350 = 300 400 SA 350 450 R th 400 180 120 90 60 30 W K/ 104MT..K Series TJ = 125 C Device fully turned-on 450 05 0. Maximum Total Power Loss (W) (Per Total Module) 500 0.5 200 100 K/W 0.7 K /W 1.0 K /W 50 1.5 K/W 150 0 0 20 40 60 80 100 0 120 25 50 75 100 125 Maximum Allowable Ambient Temperature (C) RMS Output Current (A) Fig. 13 - Total Power Loss Characteristics 1100 900 800 700 600 500 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 125 C No voltage reapplied Rated VRRM reapplied 1100 Peak Half Sine Wave On-State Current (A) 1000 Peak Half Sine Wave On-State Current (A) 1200 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 125 C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 104MT..K Series Per junction 1000 900 800 700 600 500 400 104MT..K Series Per junction 400 1 10 0.01 100 0.1 1 Number of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current 10 ZthJC - Transient Thermal Impedance (C/W) Steady state value RthJC = 1.05 K/W 1 54MT..K Series RthJC = 0.77 K/W 94MT..K Series RthJC = 0.69 K/W (DC operation) 104MT..K Series 0.1 0.01 Per junction 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 16 - Thermal Impedance ZthJC Characteristics Revision: 03-Mar-14 Document Number: 94351 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-54-94-104MT..KPbF Series www.vishay.com Vishay Semiconductors 10 Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 30 tr = 0.5 s, tp 6 s b) Recommended load line for 30 % rated dI/dt: 20 V, 65 tr = 1 s, tp 6 s (1) PGM = 100 W, tp = 500 s (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms (a) TJ = 25 C 1 TJ = -40 C (b) TJ = 125 C Instantaneous Gate Voltage (V) 100 (4) (3) (1) (2) VGD IGD 0.1 0.001 Frequency limited by PG(AV) 54/ 94/ 104MT..K Series 0.01 0.1 1 10 100 1000 Instantaneous Gate Current (A) Fig. 17 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- 10 4 MT 160 1 2 3 4 5 K PbF 6 1 - Vishay Semiconductors product 2 - Current rating code: 5 = 50 A (average) 9 = 90 A (average) 10 = 100 A (average) 3 - AC switch 4 5 - Essential part number Voltage code x 10 = VRRM (see Voltage Ratings table) 6 - PbF = Lead (Pb)-free Note * To order the optional hardware go to www.vishay.com/doc?95172 CIRCUIT CONFIGURATION A B C 1 3 5 2 4 6 D E F LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95004 Revision: 03-Mar-14 Document Number: 94351 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors MTK (with and without optional barrier) DIMENSIONS WITH OPTIONAL BARRIERS in millimeters (inches) Fast-on tab 2.8 x 0.8 (type 110) 8.5 0.5 (0.34 0.02) 30 0.5 (1.17 0.02) 24 0.5 (0.94 0.02) 38 0.5 (1.5 0.02) 25.5 0.5 (1.004 0.02) 28 1 (1.11 0.04) Screws M5 x 0.8 length 10 35 0.3 (1.38 0.01) 75 0.5 (2.95 0.02) A 2 3 4 B C 5 6 7 8 O 6.5 0.2 (O 0.26 0.01) 14 0.3 (0.55 0.01) 1 D 18 0.3 (0.71 0.01) 5 0.3 (0.2 0.01) F E 46 0.3 (1.81 0.01) 80 0.3 (3.15 0.01) 94 0.3 (3.7 0.01) Document Number: 95004 Revision: 27-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Outline Dimensions MTK (with and without optional barrier) Vishay Semiconductors DIMENSIONS WITHOUT OPTIONAL BARRIERS in millimeters (inches) Fast-on tab 2.8 x 0.8 (type 110) 24 0.5 (0.94 0.02) 8.5 0.5 (0.34 0.02) 30 0.5 (1.17 0.02) 25.5 0.5 (1.004 0.02) 28 1 (1.11 0.04) Screws M5 x 0.8 length 10 35 0.3 (1.38 0.01) 75 0.5 (2.95 0.02) A 2 3 4 B C 5 6 7 8 O 6.5 0.2 (O 0.26 0.01) 14 0.3 (0.55 0.01) 1 D 18 0.3 (0.71 0.01) 5 0.3 (0.2 0.01) F E 46 0.3 (1.81 0.01) 80 0.3 (3.15 0.01) 94 0.3 (3.7 0.01) www.vishay.com 2 For technical questions, contact: indmodules@vishay.com Document Number: 95004 Revision: 27-Aug-07 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: VS-104MT100KPBF VS-104MT160KPBF VS-104MT120KPBF