Rev.2.00 Sep 07, 2005 page 1 of 6
2SK2225
Silicon N Channel MOS FET REJ03G1005-0200
(Previous: ADE-208-140)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
• High breakdown voltage (VDSS = 1500 V)
• High speed switching
• Low drive current
• No Secondary b reakdown
• Suitable for sw i t c hi ng re gul ator, DC-DC con vert er
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
1. Gate
2. Drain
3. Source
123
D
G
S
2SK2225
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 1500 V
Gate to source voltage VGSS ±20 V
Drain current ID 2 A
Drain peak current ID(pulse)*1 7 A
Body to drain diode reverse drain current IDR 2 A
Channel dissipation Pch*2 50 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V(BR)DSS 1500 — — V ID = 10 mA, VGS = 0
Gate to source leak current IGSS — — ±1 µA VGS = ±20 V, VDS = 0
Zero gate voltage drain current IDSS — — 500 µA VDS =1200 V, VGS = 0
Gate to source cutoff voltage VGS(off) 2.0 — 4.0 V ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance RDS(on) — 9 12 Ω I
D = 1 A, VGS = 15 V*3
Forward transfer admittance |yfs| 0.45 0.75 — S ID = 1 A, VDS = 20 V*3
Input capacitance Ciss — 990 — pF
Output capacitance Coss — 125 — pF
Reverse transfer capacitance Crss — 60 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time td(on) — 17 — ns
Rise time tr — 50 — ns
Turn-off delay time td(off) — 150 — ns
Fall time tf — 50 — ns
ID = 1 A, VGS = 10 V,
RL = 30 Ω
Body to drain diode forward v oltage VDF — 0.9 — V IF = 2 A, VGS = 0
Body to drain diode reverse
recovery time trr — 1750 — ns
IF = 20 A, VGS = 0,
diF / dt = 100 A / µs
Note: 3. Pulse Test
2SK2225
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
Case Temperature TC (°C)
Channel Dissipation Pch (W)
Power vs. Temperature Derating
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Drain Current ID (A)
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage VDS (on) (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain Current ID (A)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State
Resistance vs. Drain Current
80
60
40
20
050 100 150 200
10
3
1
0.3
0.1
0.03
0.01
10 30 100 300 1000 3000 1000
0
1 ms
Operation in
this area is
limited by R
DS(on)
Ta = 25°C
100 µs
10
µ
s
PW = 10 ms (1shot)
DC Operation (Tc = 25
°
C)
5
4
3
2
1
020 40 60 80 100
15 V 10 V
7 V
6 V
5 V
Pulse Test
V
GS
= 4 V
8 V
2.0
1.6
1.2
0.8
0.4
0
Tc = 75°C
25°C
–25°C
V
DS
= 25 V
Pulse Test
246810
50
40
30
20
10
04 8 12 16 20
2 A
1 A
I
D
= 3 A
0.5 A
Pulse Test
0.1
50
20
10
2
5
1
0.5
0.2 0.5 1 2 5 10
V
GS
= 10 V
15 V
Pulse Test
2SK2225
Rev.2.00 Sep 07, 2005 page 4 of 6
Case Temperature TC (°C)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State
Resistance vs. Temperature
Drain Current ID (A)
Forward Transfer Admittance yfs (S)
Forward Transfer Admittance
vs. Drain Current
Reverse Drain Current IDR (A)
Reverse Recovery Time trr (ns)
Body to Drain Diode Reverse
Recovery Time
Drain to Source Voltage VDS (V)
Capacitance C (pF)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Switching Time t (ns)
Switching Characteristics
20
16
12
8
4
–40 0 40 80 120 160
0
0.5 A, 1 A
I
D
= 2 A
V
GS
= 15 V
Pulse Test
10
2
5
1
0.2
0.5
0.1
0.05 0.1 0.2 0.5 1 2 5
Tc = –25°C
25°C
75°C
V
DS
= 25 V
Pulse Test
5000
2000
1000
200
500
100
50
0.05 0.1 0.2 0.5 1 2 5
di / dt = 100 A / µs, Ta = 25°C
V
GS
= 0, Pulse Test
10000
1000
100
10
0
Ciss
Coss
Crss
V
GS
= 0
f = 1 MHz
10 20 30 40 50
1000
800
600
400
200
0
20
16
12
8
4
0
20 40 60 80 100
V
DD
= 250 V
400 V
600 V
V
DD
= 250 V
400 V
600 V
I
D
= 2.5 A
V
GS
V
DS
1000
200
500
100
20
10
50
0.05 0.1 0.2 0.5 1 2 5
tf
tr
td(on)
td(off)
V
GS
= 10 V
PW = 2 µs
duty < 1 %
2SK2225
Rev.2.00 Sep 07, 2005 page 5 of 6
Source to Drain Voltage VSD (V)
Reverse Drain Current IDR (A)
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Width PW (s)
Normalized Transient Thermal Impedance γS (t)
Normalized Transient Thermal Impedance vs. Pulse Width
Switching Time Test Circuit Waveforms
5
4
3
2
1
00.4 0.8 1.2 1.6 2.0
Pulse Test
V
GS
= 0, –5 V
10 V, 15 V
3
1
0.3
0.1
0.03
0.01
10 µ100 µ1 m 10 m 100 m 1 10
DM
P
PW
T
D = PW
T
ch – c(t) = s (t) • ch – c
ch – c = 2.50°C/W, Tc = 25°C
θ γ θ
θ
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
DD
= 30 V
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor
50 Ω
90%
10%
tf
2SK2225
Rev.2.00 Sep 07, 2005 page 6 of 6
Package Dimensions
0.66
15.6 ± 0.3 5.5 ± 0.3
3.2 ± 0.3
5.45 ± 0.5
4.0 ± 0.3
5.0 ± 0.3
2.7 ± 0.3
19.9 ± 0.3
21.0 ± 0.5
1.6
0.86
φ3.2
+ 0.4
– 0.2
2.6
0.86
5.45 ± 0.5
5.0 ± 0.3
+ 0.2
– 0.1
2.0 ± 0.3
0.9
+ 0.2
– 0.1
Package Name
PRSS0003ZA-A TO-3PFM / TO-3PFMV
MASS[Typ.]
5.2gSC-93
RENESAS CodeJEITA Package Code
Unit: mm
Ordering Information
Part Name Quantity Shipping Container
2SK2225-E 360 pcs Box (Tube)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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