N-Channel JFET
High Frequency Amplifier
J308 – J310 / SST308 – SST310
FEATURES
••Indu st ry Standard Part in Low Cost Plastic Pa ckag e
••High Pow e r Gai n
••Low Noise
••Dyn am ic Range G reat er Than 10 0 dB
••Easily Matched to 75Ω Input
APPLICATIONS
••VHF/UHF Am plifiers
••Oscillators
••Mixers
ABSOLUTE M AXIM UM R A T INGS
(TA = 25oC unless o th erw ise specified)
Drain- G ate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25 V
Drain- Sour ce Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . -25V
Continuo us For ward Gat e Curr ent . . . . . . . . . . . . . . . . -10 m A
Stor age Temper at ure R a nge. . . . . . . . . . . . . - 55oC t o +150oC
Oper at ing Temper atur e Ra nge . . . . . . . . . . . -55oC to +135oC
Lead Tem peratu re (So ld er ing, 10se c). . . . . . . . . . . . . +300oC
Power Dissipat ion . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . 3.27mW /oC
NOTE: Stresses above those listed under "Absolute Maxi mum
Ratings " may cause permanent damage to the device. These are
stress ratings only and fu nctional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating con ditions for extended peri ods may affec t device r eliability.
ORDERING INFORMATION
Part Package Temperature Range
J308- 310 Plastic T O -9 2 -55oC to +135oC
SST308- 310 Plastic SO T-23 -55oC to +135oC
For Sor ted Chips in Car rie rs see U308 series.
LLC
PIN CONFIGUR ATI O N
TO-92
SG
D
5021
SOT-23
G
S
D
PRODUCT MARKIN G (SOT-23 )
SST308 Z08
SST309 Z09
SST310 Z10
CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX DDS044 REV A
ELECTRICA L CHARACTERI STIC S (Continued) (TA = 2 5oC unless otherwise specified)
SYMBOL PARAMETER 308 309 310 UNITS TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
Cgd Gate-Drain Capacitance 1.8 2.5 1.8 2.5 1.8 2.5 pF VDS = 10V,
VGS = -10 f = 1MHz
(No te 2)
Cgs Gate-Source Capacitance 4.3 5.0 4. 3 5.0 4.3 5. 0
enEquivalent Short-Circuit
Input Noise Voltage 10 10 10 nV
√
Hzü⁄
ç
4«
ónVçXIÇÀçXäBÇÇG
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çQXóHzâÏé
VDS = 10V,
ID = 1 0mA f = 100Hz
(No te 2)
Re(Vfs) Common-Source Forward
Transconductance 12 12 12
µS
VDS = 10V,
ID = 1 0mA
(Note 2)
f = 105MHz
Re(Vfg) Commo n-G ate Input
Conductance 14 14 14
Re(Vis) Common-Source Input
Conductance 0.4 0.4 0.4
Re(Vos) Common-Source Output
Conductance 0.15 0.15 0.15
Gpg Common-Gate Power Gain
at Noise Ma tch 16 16 16
dB
NF Noise Figure 1.5 1.5 1.5
Gpg Common-Gate Power Gain
at Noise Ma tch 11 11 11 f = 450MHz
NF Noise Figure 2.7 2.7 2.7
NOTES: 1. Pulse test PW 300µs, duty cycle ≤3%.
2. For design reference only, not 100% tested.
J308 – J310 / SST308 – SST310
LLC
ELECTRICA L CHARACTERI STIC S (TA = 2 5oC unle ss otherwise sp ecif ie d)
SYMBOL PARAMETER 308 309 310 UNITS TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
BVGSS Gate-Source Breakdown
Voltage -25 -25 -25 V IG = -1µA, VDS = 0
IGSS Gate Reverse Current -1.0 -1.0 -1.0 nA VGS = -15V,
-1.0 -1.0 -1.0 µAV
DS = 0 TA = 125o
VGS(off) Gate-Source
Cutoff Voltage -1.0 -6.5 -1.0 -4.0 -2.0 -6.5 V VDS = 10V, ID = 1nA
IDSS Saturation Drain Current
(Note 1) 12 60 12 30 24 60 mA VDS = 10V, VGS = 0
VGS(f) Gate-Source
Forward Volt age 1.0 1.0 1.0 V VDS = 0, IG = 1mA
gfs Co mmon-Sourc e Forward
Transconductance 8,000 17,000 10,000 17,000 8,000 17,000
µSVDS = 10V
ID = 10mA
(Note 2) f = 1kHz
gos Common-Source Output
Conductance 250 250 250
gfg Common-Gate For war d
Transconductance 13,000 13,000 12,000
gog Common Gate Output
Conductance 150 150 150
CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX DS044 REV A
