© Semiconductor Components Industries, LLC, 2007
July, 2007 - Rev. 13
1Publication Order Number:
MUN2211T1/D
MUN2211T1 Series
Preferred Devices
Bias Resistor Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC-59 package which is designed for low power surface
mount applications.
Features
•Simplifies Circuit Design
•Reduces Board Space
•Reduces Component Count
•Moisture Sensitivity Level: 1
•ESD Rating - Human Body Model: Class 1
- Machine Model: Class B
•The SC-59 Package can be Soldered Using Wave or Reflow
•The Modified Gull-Winged Leads Absorb Thermal Stress During
Soldering Eliminating the Possibility of Damage to the Die
•Pb-Free Packages are Available
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector‐Base Voltage VCBO 50 Vdc
Collector‐Emitter Voltage VCEO 50 Vdc
Collector Current IC100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD230 (Note 1)
338 (Note 2)
1.8 (Note 1)
2.7 (Note 2)
mW
°C/W
Thermal Resistance, Junction‐to‐Ambient RqJA 540 (Note 1)
370 (Note 2)
°C/W
Thermal Resistance, Junction‐to‐Lead RqJL 264 (Note 1)
287 (Note 2)
°C/W
Junction and Storage Temperature
Range
TJ, Tstg -55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR-4 @ Minimum Pad.
2. FR-4 @ 1.0 x 1.0 inch Pad.
SC-59
CASE 318D
STYLE 1
Preferred devices are recommended choices for future use
and best overall value.
NPN SILICON
BIAS RESISTOR
TRANSISTORS
3
1
2
PIN 3
COLLECTOR
(OUTPUT)
PIN 1
EMITTER
(GROUND)
PIN 2
BASE
(INPUT)
R1
R2
MARKING DIAGRAM
DEVICE MARKING INFORMATION
See specific marking information in the Device Marking and
Resistor Values table on page 2 of this data sheet.
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See detailed ordering and shipping information in the table on
page 2 of this data sheet.
ORDERING INFORMATION
8x = Device Code (Refer to page 2)
M = Date Code*
G= Pb-Free Package
(Note: Microdot may be in either location)
8xMG
G
*Date Code orientation may vary depending
upon manufacturing location.
1
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2
DEVICE MARKING AND RESISTOR VALUES
Device Package Marking R1 (K) R2 (K) Shipping†
MUN2211T1 SC-59 8A 10 10 3000/Tape & Reel
MUN2211T1G SC-59
(Pb-Free)
8A 10 10 3000/Tape & Reel
MUN2211T3 SC-59 8A 10 10 10,000/Tape & Reel
MUN2211T3G SC-59
(Pb-Free)
8A 10 10 10,000/Tape & Reel
MUN2212T1 SC-59 8B 22 22 3000/Tape & Reel
MUN2212T1G SC-59
(Pb-Free)
8B 22 22 3000/Tape & Reel
MUN2213T1 SC-59 8C 47 47 3000/Tape & Reel
MUN2213T1G SC-59
(Pb-Free)
8C 47 47 3000/Tape & Reel
MUN2214T1 SC-59 8D 10 47 3000/Tape & Reel
MUN2214T1G SC-59
(Pb-Free)
8D 10 47 3000/Tape & Reel
MUN2214T3 SC-59 8D 10 47 10,000/Tape & Reel
MUN2214T3G SC-59
(Pb-Free)
8D 10 47 10,000/Tape & Reel
MUN2215T1 SC-59 8E 10 ∞3000/Tape & Reel
MUN2215T1G SC-59
(Pb-Free)
8E 10 ∞3000/Tape & Reel
MUN2216T1 SC-59 8F 4.7 ∞3000/Tape & Reel
MUN2216T1G SC-59
(Pb-Free)
8F 4.7 ∞3000/Tape & Reel
MUN2230T1 SC-59 8G 1.0 1.0 3000/Tape & Reel
MUN2230T1G SC-59
(Pb-Free)
8G 1.0 1.0 3000/Tape & Reel
MUN2231T1 (Note 3) SC-59 8H 2.2 2.2 3000/Tape & Reel
MUN2231T1G (Note 3) SC-59
(Pb-Free)
8H 2.2 2.2 3000/Tape & Reel
MUN2232T1 SC-59 8J 4.7 4.7 3000/Tape & Reel
MUN2232T1G SC-59
(Pb-Free)
8J 4.7 4.7 3000/Tape & Reel
MUN2233T1 SC-59 8K 4.7 47 3000/Tape & Reel
MUN2233T1G SC-59
(Pb-Free)
8K 4.7 47 3000/Tape & Reel
MUN2234T1 (Note 3) SC-59 8L 22 47 3000/Tape & Reel
MUN2234T1G (Note 3) SC-59
(Pb-Free)
8L 22 47 3000/Tape & Reel
MUN2236T1 SC-59 8N 100 100 3000/Tape & Reel
MUN2236T1G SC-59
(Pb-Free)
8N 100 100 3000/Tape & Reel
MUN2237T1 SC-59 8P 47 22 3000/Tape & Reel
MUN2237T1G SC-59
(Pb-Free)
8P 47 22 3000/Tape & Reel
MUN2240T1 (Note 3) SC-59 8T 47 ∞3000/Tape & Reel
MUN2240T1G (Note 3) SC-59
(Pb-Free)
8T 47 ∞3000/Tape & Reel
MUN2241T1 (Note 3) SC-59 8U 100 ∞3000/Tape & Reel
MUN2241T1G (Note 3) SC-59
(Pb-Free)
8U 100 ∞3000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
3. New devices. Updated curves to follow in subsequent data sheets.
MUN2211T1 Series
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3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector‐Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - - 100 nAdc
Collector‐Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO - - 500 nAdc
Emitter‐Base Cutoff Current MUN2211T1, G
(VEB = 6.0 V, IC = 0) MUN2212T1, G
MUN2213T1, G
MUN2214T1, G
MUN2215T1, G
MUN2216T1, G
MUN2230T1, G
MUN2231T1, G
MUN2232T1, G
MUN2233T1, G
MUN2234T1, G
MUN2236T1, G
MUN2237T1, G
MUN2240T1, G
MUN2241T1, G
IEBO -
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.05
0.13
0.2
0.1
mAdc
Collector‐Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 - - Vdc
Collector‐Emitter Breakdown Voltage (Note 4)
(IC = 2.0 mA, IB = 0)
V(BR)CEO 50 - - Vdc
ON CHARACTERISTICS (Note 4)
DC Current Gain MUN2211T1, G
(VCE = 10 V, IC = 5.0 mA) MUN2212T1, G
MUN2213T1, G
MUN2214T1, G
MUN2215T1, G
MUN2216T1, G
MUN2230T1, G
MUN2231T1, G
MUN2232T1, G
MUN2233T1, G
MUN2234T1, G
MUN2236T1, G
MUN2237T1, G
MUN2240T1, G
MUN2241T1, G
hFE 35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
160
160
60
100
140
140
350
350
5.0
15
30
200
150
150
140
350
350
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Collector‐Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA) MUN2211T1, G
MUN2212T1, G
MUN2213T1, G
MUN2214T1, G
MUN2233T1, G
MUN2236T1, G
(IC = 10 mA, IB = 5 mA) MUN2230T1, G
MUN2231T1, G
MUN2237T1, G
MUN2241T1, G
(IC = 10 mA, IB = 1 mA) MUN2215T1, G
MUN2216T1, G
MUN2232T1, G
MUN2234T1, G
MUN2240T1, G
VCE(sat) -
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Vdc
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS (Note 5) (Continued)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) MUN2211T1, G
MUN2212T1, G
MUN2214T1, G
MUN2215T1, G
MUN2216T1, G
MUN2230T1, G
MUN2231T1, G
MUN2232T1, G
MUN2233T1, G
MUN2234T1, G
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) MUN2213T1, G
MUN2240T1, G
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) MUN2236T1, G
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) MUN2237T1, G
(VCC = 5.0 V, VB = 5.0 V, RL = 1.0 kW) MUN2241T1, G
VOL -
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) MUN2211T1, G
MUN2212T1, G
MUN2213T1, G
MUN2214T1, G
MUN2233T1, G
MUN2234T1, G
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) MUN2230T1, G
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) MUN2215T1, G
MUN2216T1, G
MUN2231T1, G
MUN2232T1, G
MUN2236T1, G
MUN2237T1, G
MUN2240T1, G
MUN2241T1, G
VOH 4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Vdc
Input Resistor MUN2211T1, G
MUN2212T1, G
MUN2213T1, G
MUN2214T1, G
MUN2215T1, G
MUN2216T1, G
MUN2230T1, G
MUN2231T1, G
MUN2232T1, G
MUN2233T1, G
MUN2234T1, G
MUN2236T1, G
MUN2237T1, G
MUN2240T1, G
MUN2241T1, G
R17.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
70
32.9
32.9
70
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
100
47
47
100
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
130
61.1
61.1
130
kW
Resistor Ratio MUN2211T1, G
MUN2212T1, G
MUN2213T1, G
MUN2214T1, G
MUN2215T1, G
MUN2216T1, G
MUN2230T1, G
MUN2231T1, G
MUN2232T1, G
MUN2233T1, G
MUN2234T1, G
MUN2236T1, G
MUN2237T1, G
MUN2240T1, G
MUN2241T1, G
R1/R20.8
0.8
0.8
0.17
-
-
0.8
0.8
0.8
0.055
0.38
0.8
1.7
-
-
1.0
1.0
1.0
0.21
-
-
1.0
1.0
1.0
0.12
0.47
1.0
2.15
-
-
1.2
1.2
1.2
0.25
-
-
1.2
1.2
1.2
0.185
0.56
1.2
2.6
-
-
5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
MUN2211T1 Series
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5
Figure 1. Derating Curve
350
200
150
100
50
0
-50 0 50 100 150
TA, AMBIENT TEMPERATURE (°C)
RqJA = 370°C/W
250
PD, POWER DISSIPATION (mW)
300
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TYPICAL ELECTRICAL CHARACTERISTICS - MUN2211T1
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN
Figure 2. VCE(sat) versus IC
1002030
IC, COLLECTOR CURRENT (mA)
10
1
0.1
VO = 0.2 V TA=-25°C
75°C
25°C
40 50
Figure 3. DC Current Gain
Figure 4. Output Capacitance
1
0.1
0.01
0.001 0204060 80
IC, COLLECTOR CURRENT (mA)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1000
100
10 1 10 100
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
-25°C
TA=-25°C
25°C
IC/IB = 10
Figure 5. Output Current versus Input Voltage
75°C
25°C
TA=-25°C
100
10
1
0.1
0.01
0.001 01 2 34
Vin, INPUT VOLTAGE (VOLTS)
5678910
Figure 6. Input Voltage versus Output Current
50
010203040
4
3
1
2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
75°C
VCE = 10 V
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
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TYPICAL ELECTRICAL CHARACTERISTICS - MUN2212T1
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN
Figure 7. VCE(sat) versus ICFigure 8. DC Current Gain
Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage
1000
10
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
-25°C
100
101 100
75°C 25°C
100
0
Vin, INPUT VOLTAGE (VOLTS)
10
1
0.1
0.01
0.001 246 810
TA=-25°C
0
IC, COLLECTOR CURRENT (mA)
100
VO = 0.2 V
TA=-25°C
75°C
10
1
0.1 10 20 30 40 50
25°C
Figure 11. Input Voltage versus Output Current
0.001
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
25°C
IC/IB = 10
0.01
0.1
1
40
IC, COLLECTOR CURRENT (mA)
020 6080
50
010203040
4
3
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
VCE = 10 V
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
TA=-25°C
75°C
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TYPICAL ELECTRICAL CHARACTERISTICS - MUN2213T1
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN
Figure 12. VCE(sat) versus IC
0246810
100
10
1
0.1
0.01
0.001
Vin, INPUT VOLTAGE (VOLTS)
TA=-25°C
75°C25°C
Figure 13. DC Current Gain
Figure 14. Output Capacitance
100
10
1
0.1
010 2030 40 50
IC, COLLECTOR CURRENT (mA)
Figure 15. Output Current versus Input Voltage
1000
10
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
-25°C
100
10 1 100
Figure 16. Input Voltage versus Output Current
0204060 80
10
1
0.1
0.01
IC, COLLECTOR CURRENT (mA)
TA=-25°C
25°C75°C
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TA=-25°C
25°C
75°C
50
010203040
1
0.8
0.6
0.4
0.2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
VCE = 10 V
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10
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TYPICAL ELECTRICAL CHARACTERISTICS - MUN2214T1
10
1
0.1 01020304050
100
10
10246810
4
3.5
3
2.5
2
1.5
1
0.5
00 2 4 6 8101520253035404550
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN
Figure 17. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
02040 60 80
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
Figure 18. DC Current Gain
1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
Figure 21. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
-25°C
25°C
TA=75°C
VCE = 10
300
250
200
150
100
50
02468 1520405060708090
f = 1 MHz
lE = 0 V
TA = 25°C
TA=-25°C
25°C
75°C
IC/IB = 10
75°C25°C
TA=-25°C
VO = 5 V
VO= 0.2 V
TA=-25°C
25°C
75°C
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN2215T1
75°C
25°C
-25°C
Figure 22. VCE(sat) versus ICFigure 23. DC Current Gain
Figure 24. Output Capacitance Figure 25. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
Figure 26. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020
10
0
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
1000
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = -25°C
75°C
25°C
TA = -25°C
75°C
25°C
TA = -25°C
0.01
0.01
0.1
30
VR, REVERSE BIAS VOLTAGE (VOLTS)
4.5
1.5
45 50403020100
0
Cob, CAPACITANCE (pF)
0.5
1
2
4
3525155
3.5
3
2.5
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10 VCE = 10 V
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN2216T1
75°C
25°C
-25°C
Figure 27. VCE(sat) versus ICFigure 28. DC Current Gain
Figure 29. Output Capacitance Figure 30. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
Figure 31. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020
10
0
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
1000
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = -25°C
75°C
25°C
TA = -25°C
75°C
25°C
TA = -25°C
0.01
0.01
0.1
30
VR, REVERSE BIAS VOLTAGE (VOLTS)
4.5
1.5
45 50403020100
0
Cob, CAPACITANCE (pF)
0.5
1
2
4
3525155
3.5
3
2.5
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10 VCE = 10 V
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN2230T1
75°C
25°C
-25°C
Figure 32. VCE(sat) versus ICFigure 33. DC Current Gain
Figure 34. Output Capacitance Figure 35. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 36. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020100
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
4.5
1.5
45 50403020100
0
Cob, CAPACITANCE (pF)
0.5
1
2
4
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = -25°C
75°C
25°C
TA = -25°C
75°C
25°C
TA = -25°C
0.01
3525155
0.01
0.1
30
3.5
3
2.5
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10
VCE = 10 V
MUN2211T1 Series
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN2232T1
75°C
25°C
-25°C
Figure 37. VCE(sat) versus ICFigure 38. DC Current Gain
Figure 39. Output Capacitance Figure 40. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 41. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020100
IC, COLLECTOR CURRENT (mA)
100101
1000
10
1
0.001
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
45 50403020100
0
Cob, CAPACITANCE (pF)
1
2
4
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = -25°C
75°C
25°C
TA = -25°C
75°C25°C
TA = -25°C
0.01
3525155
0.01
0.1
30
3
100
5
6
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10 VCE = 10 V
MUN2211T1 Series
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14
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2233T1
75°C
25°C
-25°C
Figure 42. VCE(sat) versus ICFigure 43. DC Current Gain
Figure 44. Output Capacitance Figure 45. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 46. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
302515100
IC, COLLECTOR CURRENT (mA)
100101
1000
10
1
0.001
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
1.5
45 50403020100
0
Cob, CAPACITANCE (pF)
0.5
1
2
4100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
151050
0.1
1
20 25
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = -25°C
75°C
25°C
TA = -25°C
75°C25°C
TA = -25°C
0.01
3525155
0.01
0.1
20
3.5
3
2.5
100
5
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10 VCE = 10 V
MUN2211T1 Series
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15
TYPICAL ELECTRICAL CHARACTERISTICS - MUN2236T1
100
1
0.1 0102030355
100
10
0510
4
3.5
3
2.5
2
1.5
1
0.5
0
0 5 10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 47. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
0 10 20 30 40
Figure 48. DC Current Gain
0.1 1 100
IC, COLLECTOR CURRENT (mA)
Figure 49. Output Capacitance Figure 50. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
Figure 51. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
VCE = 10 V
1000
100
10 10
f = 1 MHz
lE = 0 V
TA = 25°C
TA=-25°C
25°C
75°C
75°C
25°C
TA=-25°C
VO = 5 V
VO = 0.2 V
TA=-25°C
25°C
75°C
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
IC/IB = 10
hFE, DC CURRENT GAIN
TA=-25°C
25°C
75°C
Cob, CAPACITANCE (pF)
5
4.5
15 20 25 30 35 40
1
0.1
IC, COLLECTOR CURRENT (mA)
15 25
10
Vin, INPUT VOLTAGE (VOLTS)
5 15 25 35
MUN2211T1 Series
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16
TYPICAL ELECTRICAL CHARACTERISTICS - MUN2237T1
100
10102030405
100
10
024
1.4
1
0.6
0.2
0
0 5 10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 52. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
0 10 20 30 40
Figure 53. DC Current Gain
1 100
IC, COLLECTOR CURRENT (mA)
Figure 54. Output Capacitance Figure 55. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
Figure 56. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
VCE = 10 V
1000
100
110
f = 1 MHz
lE = 0 V
TA = 25°C
TA=-25°C
25°C
75°C
75°C
25°C
TA=-25°C
VO = 5 V
VO = 0.2 V
TA=-25°C
25°C75°C
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
IC/IB = 10
hFE, DC CURRENT GAIN
TA=-25°C25°C
75°C
Cob, CAPACITANCE (pF)
1.8
6 8 10 12 14 16
1
0.001
IC, COLLECTOR CURRENT (mA)
15 25
10
Vin, INPUT VOLTAGE (VOLTS)
5 15 25 35
10
1.6
1.2
0.8
0.4
2
0.1
0.01
35
MUN2211T1 Series
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17
TYPICAL APPLICATIONS FOR NPN BRTs
LOAD
+12 V
Figure 57. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
IN
OUT
VCC
ISOLATED
LOAD
FROM mP OR
OTHER LOGIC
+12 V
Figure 58. Open Collector Inverter:
Inverts the Input Signal
Figure 59. Inexpensive, Unregulated Current Source
MUN2211T1 Series
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18
PACKAGE DIMENSIONS
SC-59
CASE 318D-04
ISSUE G
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
2.4
0.094
0.95
0.037
0.95
0.037
1.0
0.039
0.8
0.031
ǒmm
inchesǓ
SCALE 10:1
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
e
A1
b
A
E
D
1
3
2
C
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
HEDIM
A
MIN NOM MAX MIN
MILLIMETERS
1.00 1.15 1.30 0.039
INCHES
A1 0.01 0.06 0.10 0.001
b0.35 0.43 0.50 0.014
c0.09 0.14 0.18 0.003
D2.70 2.90 3.10 0.106
E1.30 1.50 1.70 0.051
e1.70 1.90 2.10 0.067
L0.20 0.40 0.60 0.008
2.50 2.80 3.00 0.099
0.045 0.051
0.002 0.004
0.017 0.020
0.005 0.007
0.114 0.122
0.059 0.067
0.075 0.083
0.016 0.024
0.110 0.118
NOM MAX
HE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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