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1
2
3
4
PNP Silicon AF Transistor
• For general AF applications
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary type: BCP68 (NPN)
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
Type Marking Pin Configuration Package
BCP69-25 ...-25* 1=B 2=C 3=E 4=C - - SOT223
* Marking is the same than type-name
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 20 V
Collector-emitter voltage VCES 25
Collector-base voltage VCBO 25
Emitter-base voltage VEBO 5
Collector current IC1 A
Peak collector current, t
p
≤ 10 ms ICM 2
Base current IB100 mA
Peak base current IBM 200
Total power dissipation-
TS ≤ 114 °C
Ptot 3 W
Junction temperature T
j
150 °C
Storage temperature Tst
g
-65 ... 150
1Pb-containing package may be available upon special request
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Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 12 K/W
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 30 mA, IB = 0
V(BR)CEO 20 - - V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO 25 - -
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0
V(BR)CES 25 - -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 5 - -
Collector-base cutoff current
VCB = 25 V, IE = 0
VCB = 25 V, IE = 0 , TA = 150 °C
ICBO
-
-
-
-
0.1
100
µA
DC current gain2)
IC = 5 mA, VCE = 10 V
IC = 500 mA, VCE = 1 V, BCP69-16
IC = 500 mA, VCE = 1 V, BCP69-25
IC = 1 A, VCE = 1 V
hFE
50
100
160
60
-
160
250
-
-
250
375
-
-
Collector-emitter saturation voltage2)
IC = 1 A, IB = 100 mA
VCEsat - - 0.5 V
Base-emitter voltage2)
IC = 5 mA, VCE = 10 V
IC = 1 A, VCE = 1 V
VBE(ON)
-
-
0.6
-
-
1
AC Characteristics
Transition frequency
IC = 100 mA, VCE = 5 V, f = 100 MHz
fT- 100 - MHz
1For calculation of RthJA please refer to Application Note Thermal Resistance
2Pulse test: t < 300µs; D < 2%
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DC current gain hFE = ƒ(IC)
VCE = 1 V
10
EHP00285BCP 69
04
10
mA
0
10
3
10
5
5
101102
101
C
FE
h
Ι
2
10
˚C
5
100
25 ˚C
˚C
-50
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
0
10
EHP00286BCP 69
CEsat
V
0.4 V 0.8
0
101
102
4
10
5
5
Ι
C
mA
5
3
10
0.2 0.6
˚C
100
25
˚C
-50
˚C
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 10
0
10
EHP00287BCP 69
BEsat
V
0
4
10
Ι
C
mA
0.2
1
10
2
10
3
10
0.4 0.6 0.8 1.2V
˚C
100
25
˚C
-50
˚C
Collector cutoff current ICBO = ƒ(TA)
VCBO = 25 V
0
10
EHP00284BCP 69
A
T
150
0
5
10
Ι
CBO
nA
50 100
1
10
2
10
4
10
˚C
typ
max
10
3
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Transition frequency fT = ƒ(IC)
VCE = 5 V
10
EHP00283BCP 69
03
10mA
1
10
3
10
5
5
10
1
10
2
10
2
C
T
fMHz
Ι
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
ts
0
0.5
1
1.5
2
2.5
W
3.5
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
RthJS
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
-
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
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Package SOT223
Package Outline
Foot Print
Marking Layout (Example)
Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
2005, 24 CW
Date code (YYWW)
BCP52-16
Type code
Pin 1
123
3
4
±0.1
±0.04
0.5 MIN.
0.28
0.1 MAX.
15˚ MAX.
6.5
±0.2
A
4.6
2.3
0.7
±0.1
0.25
M
A
1.6
±0.1
7
±0.3
B0.25
M
±0.2
3.5
B
3.5
1.4 4.8 1.4
1.11.2
80.3 MAX.
6.8
7.55
12
1.75
Pin 1
Manufacturer
0...10˚
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Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
