MCH6608 Ordering number : EN7040A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6608 General-Purpose Switching Device Applications Features * * * * Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 Gate-to-Source Voltage VGSS 10 V ID 0.65 A Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation IDP PD V PW10s, duty cycle1% 2.6 A Mounted on a ceramic board (900mm20.8mm) 1unit 0.8 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Symbol Ratings min typ Unit max ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=8V, VDS=0V 30 VDS=10V, ID=100A VDS=10V, ID=150mA 0.4 Forward Transfer Admittance VGS(off) yfs RDS(on)1 RDS(on)2 ID=150mA, VGS=4V ID=80mA, VGS=2.5V 0.9 1.2 Static Drain-to-Source On-State Resistance 1.2 1.7 ID=10mA, VGS=1.5V VDS=10V, f=1MHz 2.6 5.2 Input Capacitance RDS(on)3 Ciss 30 pF VDS=10V, f=1MHz VDS=10V, f=1MHz 15 pF 10 pF Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS Conditions IDSS IGSS Output Capacitance Coss Reverse Transfer Capacitance Crss Marking : FH 400 V 1 A 10 A 1.3 560 V mS Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 70306 / 42806PE MS IM TB-00002283 / 82201 TS IM TA-2463 No.7040-1/5 MCH6608 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 32 Rise Time tr td(off) See specified Test Circuit. 110 ns See specified Test Circuit. 250 ns Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge See specified Test Circuit. 160 ns VDS=10V, VGS=10V, ID=300mA 2.34 nC 0.38 nC Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd VDS=10V, VGS=10V, ID=300mA VDS=10V, VGS=10V, ID=300mA Diode Forward Voltage VSD IS=300mA, VGS=0V Package Dimensions unit : mm 7022A-006 0.25 2.0 6 5 0.45 0.8 5 4 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 1 2 3 Top View 4 3 0.65 0.3 0.85 0.07 V 6 0.15 2.1 1.6 0.25 2 nC 1.2 Electrical Connection 0 to 0.02 1 ns 1 2 3 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 6 5 4 SANYO : MCPH6 Switching Time Test Circuit VDD=15V VIN 4V 0V ID=150mA RL=100 VOUT VIN D PW=10s D.C.1% G P.G 50 MCH6608 S No.7040-2/5 MCH6608 Drain Current, ID -- A V 3 .0 2.5 V 2.0 V 0.20 0.5 0.15 VGS=1.5V 0.10 0.05 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V 0.2 1.0 0 Static Drain-to-Source On-State Resistance, RDS(on) -- 150mA ID=80mA 1.0 0.5 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 10 3 Ta=75C 1.0 --25C 25C 7 5 3 2 0.1 0.01 2 3 5 7 2 0.1 3 5 Drain Current, ID -- A 7 --20 0 20 40 60 80 2 2 3 5 100 Ambient Temperature, Ta -- C 120 140 160 IT00230 7 2 0.1 3 5 7 1.0 IT00227 RDS(on) -- ID 7 5 Ta=75C 3 --25C 25C 2 2 3 5 7 2 0.01 Drain Current, ID -- A Forward Transfer Admittance, yfs -- S V =2.5 , VGS A m 0 I D=8 =4.0V A, V GS m 0 5 I D=1 --40 3 3 IT00229 yfs -- ID 10 0.5 0 --60 --25C 25C 5 IT00228 2.0 1.0 7 1.0 0.001 1.0 2.5 1.5 Ta=75C 1.0 VGS=1.5V RDS(on) -- Ta 3.0 2 10 Static Drain-to-Source On-State Resistance, RDS(on) -- 5 2 3 Drain Current, ID -- A VGS=2.5V 7 VGS=4V IT00226 RDS(on) -- ID 10 IT00225 5 0.1 0.01 0 2 2.5 2.0 7 2.0 1 1.5 RDS(on) -- ID 10 2.5 0 1.0 Gate-to-Source Voltage, VGS -- V Ta=25C 1.5 0.5 IT00224 RDS(on) -- VGS 3.0 Static Drain-to-Source On-State Resistance, RDS(on) -- 0.3 0 0 Static Drain-to-Source On-State Resistance, RDS(on) -- 0.4 0.1 0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ta= --25 C 75 C 3.5 V 4.0V VDS=10V 6.0V Drain Current, ID -- A 0.25 ID -- VGS 0.6 25 C ID -- VDS 0.30 VDS=10V 7 5 3 2 1.0 7 --25 Ta= 5 C 75C 3 C 2 0.1 0.01 25 2 3 5 7 0.1 2 Drain Current, ID -- A 3 5 7 1.0 IT00231 No.7040-3/5 MCH6608 IS -- VSD 1.0 7 Switching Time, SW Time -- ns Ta=7 5 C 25C --25C Source Current, IS -- A 3 0.1 7 5 3 2 0.2 0.4 0.6 0.8 1.0 1.4 1.2 Diode Forward Voltage, VSD -- V td(off) 2 tf tr 100 7 5 td(on) 3 2 Gate-to-Source Voltage, VGS -- V Ciss 2 Coss Crss 7 5 5 3 2 7 2 0.1 3 5 IT00233 VGS -- Qg VDS=10V ID=300mA 9 10 3 10 5 3 2 Drain Current, ID -- A f=1MHz 7 Ciss, Coss, Crss -- pF 3 IT00232 Ciss, Coss, Crss -- VDS 100 5 10 0.01 0.01 0 VDD=15V VGS=4V 7 5 2 SW Time -- ID 1000 VGS=0V 8 7 6 5 4 3 2 1 1.0 0 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W PW10s IDP=2.6A 1m Drain Current, ID -- A s 10 ID=0.65A ms DC 3 10 0m op s era 2 tio n 0.1 Operation in this area is limited by RDS(on). 7 5 3 2 Ta=25C Single pulse Mounted on a ceramic board(900mm20.8mm)1unit 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 1.5 1.0 2.0 2.5 Total Gate Charge, Qg -- nC IT00235 PD -- Ta 1.0 2 1.0 7 5 0.5 IT00234 ASO 5 3 0 30 0.8 M ou nt 0.6 ed on ac er am ic bo ar 0.4 d( 90 0m m2 0 .8m 0.2 m )1 un it 0 3 5 IT03638 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT03637 No.7040-4/5 MCH6608 Note on usage : Since the MCH6608 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2006. Specifications and information herein are subject to change without notice. PS No.7040-5/5