Absolute Maximum Ratings
Parameter Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 43
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 27
IDM Pulsed Drain Current ➀172
PD @ TC = 25°C Max. Power Dissipation 300 W
Linear Derating Factor 2.4 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy ➁500 mJ
IAR Avalanche Current ➀43 A
EAR Repetitive Avalanche Energy ➀30 mJ
dv/dt Peak Diode Recovery dv/dt ➂5.7 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Pckg. Mounting Surface Temp. 300 ( for 5s)
Weight 3.3 (Typical) g
PD - 91397B
Pre-Irradiation
International Rectifier’s RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both T otal Dose and Single Ev ent Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
oC
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
5/4/2000
www.irf.com 1
Product Summary
Part Number Radiation Level RDS(on) IDQPL Part Number
IRHNA7260 100K Rads (Si) 0.07Ω43A JANSR2N7433U
IRHNA3260 300K Rads (Si) 0.07Ω43A JANSF2N7433U
IRHNA4260 600K Rads (Si) 0.07Ω43A JANSG2N7433U
IRHNA8260 1000K Rads (Si) 0.07Ω43A JANSH2N7433U
Features:
nSingle Event Effect (SEE) Hardened
nLow RDS(on)
nLow Total Gate Charge
nProton Tolerant
nSimple Drive Requirements
nEase of Paralleling
nHermetically Sealed
nSurface Mount
nLight Weight
For footnotes refer to the last page
IRHNA7260
200V, N-CHANNEL
REF: MIL-PRF-19500/664
RAD-Hard
™
HEXFET
®
MOSFET TECHNOLOGY
SMD - 2
2www.irf.com
IRHNA7260 Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units T est Conditions
BVDSS Drain-to-Source Breakdown Voltage 200 — — V VGS =0 V, ID = 1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.26 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source — — 0.070 VGS = 12V, ID = 27A
On-State Resistance — — 0.077 ΩVGS = 12V, ID = 43A
VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 1.0mA
gfs Forward Transconductance 9.0 — — S ( )V
DS > 15V, IDS = 27A
IDSS Zero Gate Voltage Drain Current — — 25 VDS= 160V,VGS=0V
— — 250 VDS = 160V
VGS = 0V, T J = 125°C
IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V
QgTotal Gate Charge — — 290 VGS = 12V, ID = 43A
Qgs Gate-to-Source Charge — — 42 nC VDS = 100V
Qgd Gate-to-Drain (‘Miller’) Charge — — 120
td(on) Turn-On Delay Time — — 50 VDD = 100V, ID = 43A,
trRise Time — — 200 RG = 2.35Ω
td(off) Turn-Off Delay Time — — 200
tfFall Time — — 130
LS + LDTotal Inductance — 4.0 —
Ciss Input Capacitance — 5300 — VGS = 0V, VDS = 25V
Coss Output Capacitance — 1200 — pF f = 1.0MHz
Crss Reverse Transfer Capacitance — 360 —
nA
Ω
nH
ns
µA
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Thermal Resistance
Parameter Min Typ Max Units T est Conditions
RthJC Junction-to-Case — — 0.42
RthJPCB Junction-to-PC Board — 1.6 — Solder to a 1” sq. copper clad PC Board
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units T est Conditions
ISContinuous Source Current (Body Diode) — — 43
ISM Pulse Source Current (Body Diode) ➀— — 172
VSD Diode Forward Voltage — — 1.8 V Tj = 25°C, IS = 43A, VGS = 0V ➃
trr Reverse Recovery Time — — 820 nS Tj = 25°C, IF = 43A, di/dt ≥ 100A/µs
QRR Reverse Recovery Charge — — 8.5 µC VDD ≤ 25V ➃
ton Forward Turn-On Time Intrinsic tur n-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Measured from center of drain
pad to center of source pad
www.irf.com 3
Pre-Irradiation IRHNA7260
T able 1. Electrical Characteristics @ Tj = 25°C, Post T otal Dose Irradiation ➄➅
Parameter 100K Rads(Si)1 600 to 1000K Rads (Si)2
Units
Test Conditions
Min Max Min Max
BVDSS Drain-to-Source Breakdown Voltage 200 — 200 — V VGS = 0V, ID = 1.0mA
VGS(th) Gate Threshold V oltage ➃ 2.0 4.0 1.25 4.5 VGS = VDS, ID = 1.0mA
IGSS Gate-to-Source Leakage Forward — 100 — 100 nA VGS = 20V
IGSS Gate-to-Source Leakage Reverse — -100 — -100 V GS = -20 V
IDSS Zero Gate Voltage Drain Current — 25 — 50 µA VDS=160V, V GS =0V
RDS(on) Static Drain-to-Source ➃ — 0.075 — 0.16 Ω VGS = 12V, ID =27A
On-State Resistance (TO-3)
RDS(on) Static Drain-to-Source ➃ — 0.07 — 0.11 Ω VGS = 12V, ID =27A
On-State Resistance (SMD-2)
International Rectifier Radiation Hardened MOSFETs are tested to v erify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufactur ing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part number IRHNA7260 (JANSR2N7433U)
2. Part numbers IRHNA3260 (JANSF2N7433U), IRHNA4260 (JANSG2N7433U) and IRHNA8260 (JANSH2N7433U)
Fig a. Single Event Effect, Safe Operating Area
VSD Diode Forward Voltage ➃ — 1.8 — 1.8 V VGS = 0V, IS = 43A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
0
50
100
150
200
0 -5 -10 -15 -20
VGS
VDS
Cu
Br
I on LET Energy Range VDS(V)
MeV/(mg/cm2)) (MeV) (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Cu 28 285 43 190 180 170 125 —
B r 36.8 305 39 100 100 100 50 —
4www.irf.com
IRHNA7260 Pre-Irradiation
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
10
100
1000
5 6 7 8 9 10 11 12
V = 50V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
10
100
1000
1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
10
100
1000
1 10 100
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
12V
43A
www.irf.com 5
Pre-Irradiation IRHNA7260
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
0
2000
4000
6000
8000
10000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
0.1
1
10
100
1000
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 150 C
J°
T = 25 C
J°
040 80 120 160 200 240
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
43 A
V = 40V
DS
V = 100V
DS
V = 160V
DS
1
10
100
1000
1 10 100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C
°°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
6www.irf.com
IRHNA7260 Pre-Irradiation
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RGD.U.T.
12V
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150
0
10
20
30
40
50
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectan
g
ular Pulse Duration
(
sec
)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
www.irf.com 7
Pre-Irradiation IRHNA7260
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
12V
25 50 75 100 125 150
0
200
400
600
800
1000
1200
Starting T , Junction Temperature( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
19A
27A
43A
8www.irf.com
IRHNA7260 Pre-Irradiation
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
➅ Total Dose Irradiation with VDS Bias.
160 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD = 25V, starting TJ = 25°C, L= 0.54mH
Peak IL = 43A, VGS = 12V
➂ ISD ≤43A, di/dt ≤ 410A/µs,
VDD ≤ 200V, TJ ≤ 150°C
Case Outline and Dimensions — SMD-2
Foot Notes:
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: + + 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 5/00
