2N3553
Document Number 5619
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
ABSOLUTE MAXIMUM RATINGS(TA= 25°c unless otherwise stated)
NPN SILICON HIGH
FREQUENCY TRANSISTOR
VCEO Collector – Emitter Voltage
VCBO Collector – Base Voltage
VEBO Emitter – Base Voltage
ICContinuous Collector Current
PDTotal Device Disipation @ TCase = 25°C
Derate above 25°C
Tj, Tstg Operating and Storage Junction Temperature Range
40V
65V
4.0V
1A
7W
40mW/°C
–65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
0.89
(0.035)max.
12.70
(0.500)
min. 0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
123
0.74 (0.029)
1.14 (0.045)
TO-39 (TO - 205AD)
Pin 1 – Emitter Pin 2 – Base Pin 3 – Collector
FEATURES
• Fast Switching
• Low Leakage Current
APPLICATIONS
The 2N3553 is designed for amplifier and
oscillator applications in military and
industrial equipment. Suitable for use as
output, driver or pre-driver stages in VHF
equipment.
2N3553
Document Number 5619
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter Test Conditions Min. Typ. Max. Unit
V
mA
—
V
MHz
pF
W
dB
%
40
4.0 0.1
5.0
1.0
0.1
10 1.0
500
8.0 10
0.25
10
50
VCEO(sus)
V(BR)EBO
ICEO
ICEX
IEBO
hFE
VCE(sat)
fT
Cobo
Pin
Gpe
N
Collector Emitter Sustaining Voltage
Emitter Base Breakdown Voltage
Collector Cut Off Current
Collector Cut Off Current
VBE(off) = 1.5V
Emitter Cut Off Current
DC Current Gain
Collector Emitter Saturation Voltage
Current Gain - Bandwidth Product
Output Capacitance
Power Input
Common Emitter Amplifier Power
Gain
Collector Efficiency
IC= 200mA IB= 0
IE= 0.1mA IC= 0
VCE = 30V IB= 0
VCE = 30V TC= 200°C
VCE = 65V
VBE = 4V IC= 0
IC= 250mA VCE = 1.0V
IC= 250mA IB= 50mA
IC= 100mA VCE = 28V
f = 100MHz
IE= 0 VCB = 30V
f = 100kHz
Pout = 2.5W VCE = 28V
f =175MHz
Pout = 2.5W VCE = 28V
f =175MHz
Pout = 2.5W VCE = 28V
f =175MHz
ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise stated)
