
CMFSH-3i
SURFACE MOUNT
DUAL, ISOLATED
SILICON SCHOTTKY DIODES
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMFSH-3i
consists of two electrically isolated silicon Schottky
diodes packaged in an epoxy molded SOT-143 surface
mount case. This devices is designed fast switching
applications requiring a low forward voltage drop.
MARKING CODE: C3I
SOT-143 CASE
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 30 V
Continuous Forward Current IF 100 mA
Peak Repetitive Forward Current IFRM 200 mA
Peak Forward Surge Current, tp=10ms IFSM 750 mA
Power Dissipation PD 350 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 357 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IR V
R=25V 90 500 nA
IR V
R=25V, TA=100°C 25 100 μA
BVR I
R=100μA 30 V
VF I
F=2.0mA 0.29 0.33 V
VF I
F=15mA 0.40 0.45 V
VF I
F=100mA 0.74 1.00 V
CT V
R=1.0V, f=1.0MHz 7.0 pF
trr I
F=IR=10mA, Irr=1.0mA, RL=100Ω 5.0 ns
R5 (13-August 2010)
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