R1180x SERIES
150mA LDO REGULATOR
NO.EA-105-111027
1
OUTLINE
The R1180x Series are CMOS-based voltage regulator ICs with high output voltage accuracy, extremely low
supply current, and low ON-resistance. Each of these ICs consists of a volt age reference unit, an error amplifier,
resistor-net for volt age setting, a cu rrent limit circuit wh ich prevent s the destru ction by excess current, and so on.
The output voltage of these ICs is fixed with high accuracy. B version has a chip enable pin, therefore ultra-low
consumption current standby mode can be realized with the pin.
Since the packages for these ICs are SOT-23-5 (R1180N Series), SC-82AB (R1180Q Series), and SON1612-6
(R1180D Series), therefore high density mounting of the ICs on boards is possible.
FEATURES
• Supply Current......................................................... Typ. 1μA
(Except the current through CE pull-down circuit)
• Standby Mode.......................................................... Typ. 0.1μA
• Dropout Voltage....................................................... Typ. 0.25V (IOUT=150mA 3.0V Output type)
• Temperature-Drift Coefficient of Output Voltage...... Typ. ±100ppm/°C
• Line Regulation........................................................ Typ. 0.05%/V
• Output Voltage Accuracy.......................................... ±2.0%
• Packages ................................................................ SON1612-6, SC-82AB, SOT-23-5
• Output Voltage Range.............................................. 1.2V to 3.6V (0.1V steps)
(For other voltages, please refer to MARK INFORMATIONS.)
• Built-in Fold Back Protection Circuit ........................Typ. 40mA (Current at short mode)
• Ceramic capacitors are recommended to be used with this IC.....0.1μF
APPLICATIONS
• Stable voltage reference.
• Power source for electrical appliances such a s cameras, VCRs and camcorde rs.
• Power source for battery-powered equipment.
R1180x
2
BLOCK DIAGRAMS
R1180xxx1B R1180xxx1C
V
DD
V
OUT
GND
Vref
Current L imit
CE
V
DD
V
OUT
GND
Vref
Current Limit
SELECTION GUIDE
The output voltage, CE pin polarity, package, etc. for the ICs can be selected at the user’s request.
Product Name Package Quantity per Reel Pb Free Halogen Free
R1180Dxx1∗-TR-FE SON1612-6 4,000 pcs Yes Yes
R1180Qxx1∗-TR-FE SC-82AB 3,000 pcs Yes Yes
R1180Nxx1∗-TR-FE SOT-23-5 3,000 pcs Yes Yes
xx : The output voltage can be designated in the range from 1.2V(12) to 3.6V(36) in 0.1V steps.
(For other voltages, please refer to MARK INFORMA TIONS.)
∗ : CE pin polarity are options as follows.
(B) "H" Active
(C) without CE pin
R1180x
3
PIN CONFIGURATION
z SON1612-6 z SC-82AB z SOT-23-5
1 2 3
6 5 4
43
12
(m ark side)
(Mark side)
2 1 3
5 4
PIN DESCRIPTIONS
• SON1612-6
Pin No Symbol Pin Description
1 VDD Input Pin
2 GND Ground Pin
3 VOUT Output pin
4 NC No Connection
5 GND Ground Pin
6 CE or NC Chip Enable Pin or No Connection
• SC-82AB
Pin No Symbol Pin Description
1 CE or NC Chip Enable Pin or No Connection
2 GND Ground Pin
3 VOUT Output pin
4 VDD Input Pin
• SOT-23-5
Pin No Symbol Pin Description
1 VDD Input Pin
2 GND Ground Pin
3 CE or NC Chip Enable Pin or No Connection
4 NC No Connection
5 VOUT Output pin
R1180x
4
ABSOLUTE MAXIMUM RATINGS
Symbol Item Rating Unit
VIN Input Voltage 6.5 V
VCE Input Voltage (CE Pin) 6.5 V
VOUT Output Voltage −0.3 to VIN+0.3 V
IOUT Output Current 180 mA
Power Dissipation (SON1612-6)* 500
Power Dissip ation (SC-82AB)* 380
PD
Power Dissipation (SOT-23-5)* 420
mW
Topt Operating Temperature Range −40 to 85 °C
Tstg Storage Temperature Range −55 to 125 °C
∗) For Power Dissipation, please refer to PACKAGE INFORMATION.
ABSOLUTE MAXIMUM RATINGS
Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the
permanent damages and may degrade the life time and safety for both device and system u sing the device
in the field.
The functional operation at or over these absolute maximum ratings is not assured.
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)
All of electronic equipment sho uld b e designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the
recommended operating conditions, even if when they are used over such conditions by momentary
electronic noise or su rge. And the semicondu ctor devices may receive seriou s damage whe n they continue
to operate over the recommended operating conditions.
R1180x
5
ELECTRICAL CHARACTERISTICS
• R1180xxx1B/C
Topt=25°C
Symbol Item Conditions Min. Typ. Max. Unit
VOUT Output Voltage VIN=Set VOUT+1V
1μA ≤ IOUT ≤ 30mA ×0.980 ×1.020 V
IOUT Output Current VIN−VOUT=1.0V(VOUT ≥ 1.5V)
VIN=2.4V(VOUT<1.5V) 150 mA
ΔVOUT/ΔIOUT Load Regulation VIN−VOUT=1.0V(VOUT ≥ 1.5V)
VIN=2.4V(VOUT<1.5V)
1μA ≤ IOUT ≤ 150mA 20 40 mV
VDIF Dropout Voltage Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT
VOLTAGE
ISS Supply Current VIN−VOUT=1.0V,IOUT=0mA 1.0 1.5
μA
Istandby Supply Current (Standby) VIN−VOUT=1.0V,VCE=GND 0.1 1.0
μA
ΔVOUT/ΔVIN Line Regulation
IOUT=30mA
VOUT＋0.5V ≤ VIN ≤ 6.0V
(VOUT ≥ 1.5V)
2.0V ≤ VIN ≤ 6.0V
(1.2V ≤ VOUT ≤ 1.4V)
0.05 0.20 %/V
VIN Input Voltage 1.7 6.0 V
ΔVOUT/
ΔTopt Output Voltage
Temperature Coefficient IOUT=30mA
−40°C ≤ Topt ≤ 85°C ±100 ppm
/°C
ISC Short Current Limit VOUT=0V 40 mA
IPD CE Pull-down Constant
Current (R1180xxx1B) 0.35
μA
VCEH CE Input Voltage "H" (R1180xxx1B) 1.2 6.0 V
VCEL CE Input Voltage "L" (R1180xxx1B) 0.0 0.3 V
• ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE
Topt = 25°C
Dropout Voltage VDIF (V)
Output Voltage
VOUT (V) Condition Typ. Max.
1.2
<
=
VOUT < 1.3 0.85 1.20
1.3
<
=
VOUT < 1.4 0.75 1.10
1.4
<
=
VOUT < 1.5 0.65 1.00
1.5
<
=
VOUT < 1.7 0.60 0.90
1.7
<
=
VOUT < 1.9 0.50 0.75
1.9
<
=
VOUT < 2.1 0.40 0.65
2.1
<
=
VOUT < 2.8 0.35 0.55
2.8
<
=
VOUT
<
=
3.6
IOUT=150mA
0.25 0.40
R1180x
6
TYPICAL APPLICATION
C1 C2
OUT IN
R1180x
Series
VDD VOUT
CE/NC GND
(External Components)
Output Capacitor
Ceramic Cap acitor 0.1μF
TECHNICAL NOTES
When using these ICs, consider the following p oints:
Phase Compensation
In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For
this purpose, use a capacitor C2 with good frequency characteristics and ESR (Equivalent Seri es Resista nce).
(Note: If additional ceramic capacitors are connected with parallel to the output pin with an output capacitor for
phase compensation, the operation might be unstable. Because of this, test these ICs with as same external
component s as ones to be used on the PCB.)
PCB Layout
Make VDD and GND lines sufficient. If their impedance is high, noise pickup or unstable operation may result.
Connect a capacitor C1 with a capacitance value as much as 0.1μF or more between VDD and GND pin, and as
close as possible to the pins.
Set external component s, e specially the output capacitor C2, as close as possible to the ICs, and ma ke wiring
as short as possible.
R1180x
7
TEST CIRCUITS
C1 V
C2 V
OUT
I
OUT
C1= Cer am ic 1. 0
μ
F
C2= Cer am ic 0.1μF
↓
R1180x
Series
V
DD
V
OUT
CE/NC GND
Standard test Circuit
C1 C2A I
SS
C1=Cer amic 1.0
μ
F
C2=Cer amic 0.1μF
R1180x
Series
V
DD
V
OUT
CE/NC GND
Supply Current Test Circuit
C2
Pulse
Generator ↓I
OUT
C2=Cer a m ic 0.1
μ
F
R1180x
Series
V
DD
V
OUT
CE/NC GND
Ripple Rejection, Line Transient Response Test Circuit
R1180x
8
TYPICAL CHARACTERISTICS
1) Output Voltage vs. Output Current (Topt=25°C)
R1180x121x R1180x281x
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0 100 200 300 400 500
Output Current I
OUT
[mA]
Output Voltage V
OUT
[V]
V
IN
=2.0V
V
IN
=2.2V
V
IN
=3.5V
V
IN
=2.5V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 100 200 300 400 500
Output Current IOUT[mA]
Output Voltage VOUT[V]
V
IN
=3.1V
V
IN
=3.3V
V
IN
=3.8V
R1180x361x
0.0
1.0
2.0
3.0
4.0
0 100 200 300 400 500
Output Current I
OUT
[mA]
Output Voltage V
OUT
[V]
V
IN
=3.9V
V
IN
=4.6V
2) Output Voltage vs. Input Voltage (Topt=25°C)
R1180x121x R1180x281x
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
1.25
1.30
123456
Input Voltage V
IN
[V]
Output Voltage V
OUT
[V]
1mA
30mA
50mA
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
123456
Input Voltage V
IN
[V]
Output Voltage V
OUT
[V]
1mA
30mA
50mA
R1180x
9
R1180x361x
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
123456
Input Voltage VIN[V]
Output Voltage V
OUT
[V]
1mA
30mA
50mA
3) Dropout Voltage vs. Output Current
R1180x121x R1180x281x
㪇㪅㪇
㪇㪅㪈
㪇㪅㪉
㪇㪅㪊
㪇㪅㪋
㪇㪅㪌
㪇㪅㪍
㪇㪅㪎
㪇㪅㪏
㪇㪅㪐
㪈㪅㪇
0 25 50 75 100 125 15
0
Output Current IOUT(mA)
Dropout Voltage VDIF(V)
85
25
−40
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0 25 50 75 100 125 150
Output Current I
OUT
(mA)
Dropout Voltage V
DIF
(V)
85
25
−
40
R1180x361x
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0 25 50 75 100 125 15
0
Output Current IOUT(mA)
Dropout Voltage VDIF(V)
85
25
−40
R1180x
10
4) Output Voltage vs. Temperature (IOUT=30mA)
R1180x121x (VIN=2.2V) R1180x281x (VIN=3.8V)
1.16
1.17
1.18
1.19
1.20
1.21
1.22
1.23
1.24
−
40
−
15 10 35 60 85
Temperature Topt[]
Output Voltage V
OUT
[V]
2.74
2.76
2.78
2.80
2.82
2.84
2.86
−
40
−
15 10 35 60 85
Temperature Topt[]
Output Voltage VOUT[V]
R1180x361x (VIN=4.6V)
3.52
3.54
3.56
3.58
3.60
3.62
3.64
3.66
3.68
−
40
−
15 10 35 60 8
5
Temperature Topt[]
Output Voltage V
OUT
[V]
5) Supply Current vs. Input Voltage (Topt=25°C)
R1180x121x R1180x281x
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0123456
Input Voltage V
IN
[V]
Supply Current I
SS
[μA]
0.0
0.2
0.4
0.6
0.8
1.0
1.2
012345
6
Input Voltage VIN[V]
Supply Current ISS[μA]
R1180x
11
R1180x361x
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0123456
Input Voltage V
IN
[V]
Supply Current I
SS
[μA]
6) Supply Current vs. Temp erature
R1180x121x(VIN=2.2V) R1180x281x(VIN=3.8V)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
−
40
−
15 10 35 60 8
5
Temperature Topt[]
Supply Current ISS[μA]
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
−
50
−
25 0 25 50 75 100
Temperature Topt[]
Supply Current I
SS
[μA]
R1180x361x(VIN=4.6V)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
−
50
−
25 0 25 50 75 100
Temperature Topt[]
Supply Current I
SS
[μA]
R1180x
12
7) Dropout Voltage vs. Set Output Voltage (Topt=25°C)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1234
Set Output Voltage Vreg[V]
Dropout Voltage V
DIF
[V]
10mA
30mA
50mA
150mA
8) Ripple Rejection vs. Frequen cy (CIN=none)
R1180x121x R1180x121x
I
OUT
=50mA
I
OUT
=1mA
I
OUT
=30mA
0
10
20
30
40
50
60
70
0.1 1 10 100
Frequency f[kHz]
Ripple Rejection RR[dB]
V
IN
=2.4V
DC
+0.5p-p
C
OUT
=Ceramic0.1μF
I
OUT
=50mA
I
OUT
=1mA
I
OUT
=30mA
V
IN
=2.4V
DC
+0.5p-p
C
OUT
=Ceramic1μF
0
10
20
30
40
50
60
70
0.1 1 10 100
Frequency f[kHz]
Ripple Rejection RR[dB]
R1180x281x R1180x281x
IOUT=50mA
IOUT=1mA
IOUT=30mA
VIN=3.8VDC+0.5p-p
COUT=Ceramic0.1μF
0
10
20
30
40
50
60
70
0.1 1 10 100
Frequency f[kHz]
Ripple Rejection RR[dB]
I
OUT
=50mA
I
OUT
=1mA
I
OUT
=30mA
V
IN
=3.8V
DC
+0.5p-p
C
OUT
=Ceramic1μF
0
10
20
30
40
50
60
70
0.1 1 10 100
Frequency f[kHz]
Ripple Rejection RR[dB]
R1180x
13
R1180x361x R1180x361x
IOUT=50mA
IOUT=1mA
IOUT=30mA
VIN
=
4.6VDC+0.5p-p
C
OUT=
Ceramic0.1
μ
F
0
10
20
30
40
50
60
70
0.1 1 10 100
Frequency f[kHz]
Ripple Rejection RR[dB]
I
OUT
=50mA
I
OUT
=1mA
I
OUT
=30mA
V
IN
=4.6V
DC
+0.5p-p
C
OUT
=Ceramic1μF
0
10
20
30
40
50
60
70
0.1 1 10 100
Frequency f[kHz]
Ripple Rejection RR[dB]
9) Ripple Rejection vs. Input Bias Voltage (Topt=25°C, CIN=none, COUT=Ceramic0.1μF)
R1180x281x(IOUT=1mA) R1180x281x(IOUT=30mA)
Input Voltage VIN[V]
0
5
10
15
20
25
30
35
40
45
50
2.9 3.2 3.5 3.8
Ripple Rejection RR[dB]
f=600Hz
f=1kHz
f=10kHz
f=100kHz
0
5
10
15
20
25
30
35
40
45
50
2.9 3.2 3.5 3.8
Input Voltage V
IN
[V]
Ripple Rejection RR[dB]
f=600Hz
f=1kHz
f=10kHz
f=100kHz
R1180x281x(IOUT=50mA)
0
5
10
15
20
25
30
35
40
45
50
2.9 3.2 3.5 3.8
Input Voltage V
IN
[V]
Ripple Rejection RR[dB]
f=600Hz
f=1kHz
f=10kHz
f=100kHz
R1180x
14
10) Input Transient Response (CIN=none, tr=tf=5μs)
R1180x281x
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0 100 200 300 400 500 600 700 800 900 1000
Time T[μs]
Output Voltage V
OUT
[V]
−1
0
1
2
3
4
5
6
Input Voltage V
IN
[V]
I
OUT
=1mA
C
OUT
=Ceramic1μF
Input Voltage
Output Voltage
R1180x281x
I
OUT
=30mA
C
OUT
=Ceramic0.1μF
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0 20 40 60 80 100 120 140 160 180 200
Time T[μs]
Output Voltage V
OUT
[V]
−1
0
1
2
3
4
5
6
Input Voltage V
IN
[V]
Input Voltage
Output Voltage
R1180x281x
I
OUT
=30mA
C
OUT
=Ceramic0.47μF
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0 20 40 60 80 100 120 140 160 180 200
Time T[μs]
Output Voltage V
OUT
[V]
−1
0
1
2
3
4
5
6
Input Voltage V
IN
[V]
Input Voltage
Output Voltage
R1180x
15
R1180x281x
I
OUT
=30mA
C
OUT
=Ceramic1μF
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0 20 40 60 80 100 120 140 160 180 200
Time T[μs]
Output Voltage V
OUT
[V]
−1
0
1
2
3
4
5
6
Input Voltage V
IN
[V]
Input Voltage
Output Voltage
11) Load Transient Respo nse (tr=tf=0.5μs VIN=3.8V)
R1180x281x
C
OUT
=Ceramic0.1μF
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0 100 200 300 400 500 600 700 800 900 1000
Time T[μs]
Output Voltage VOUT[V]
−
40
−
30
−
20
−
10
0
10
20
Output Current IOUT[mA]
Output Current
Output Voltage
R1180x281x
C
OUT
=Ceramic1μF
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0 100 200 300 400 500 600 700 800 900 1000
Time T[μs]
Output Voltage V
OUT
[V]
−
40
−
30
−
20
−
10
0
10
20
Output Current I
OUT
[mA]
Output Current
Output Voltage
R1180x
16
R1180x281x
C
OUT
=Ceramic10μF
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0 100 200 300 400 500 600 700 800 900 1000
Time T[μs]
Output Voltage VOUT[V]
−40
−30
−20
−10
0
10
20
Output Current IOUT[mA]
Output Current
Output Voltage
R1180x281x
C
OUT
=Ceramic0.1μF
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0 20 40 60 80 100 120 140 160 180 200
Time T[μs]
Output Voltage V
OUT
[V]
−150
−100
−50
0
50
100
150
Output Current I
OUT
[mA]
Output Current
Output Voltage
R1180x281x
COUT=Ceramic0.47μF
2.0
2.5
3.0
3.5
4.0
4.5
5.0
㪇 㪉㪇 㪋㪇 㪍㪇 㪏㪇 㪈㪇㪇 㪈㪉㪇 㪈㪋㪇 㪈㪍㪇 㪈㪏㪇 㪉㪇㪇
Time T[μs]
Output Voltage V
OUT
[V]
−150
−100
−50
0
50
100
150
Output Current I
OUT
[mA]
Output Current
Output Voltage
R1180x
17
R1180x281x
COUT=Ceramic1.0μF
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0 20 40 60 80 100 120 140 160 180 200
Time T[μs]
Output Voltage V
OUT
[V]
−150
−100
−50
0
50
100
150
Output Current I
OUT
[mA]
Output Current
Output Voltage
R1180x
18
ESR vs. Output Current
The relations between IOUT (Output Current) and ESR of an output capacitor are shown above. The conditions
when the white noise level is under 40μV (Avg.) are marked as the hatched area in the graph.
<Measureme nt conditions>
(1) VIN=VOUT+1V
(2) Frequency Band: 10Hz to 2MHz (BW=30Hz)
(3) Temperature: −40°C to 85°C
R1180x121x R1180x281x
CIN =Ceramic 1.0μA, COUT =Ceramic 0.1μF CIN =Ceramic 1.0μA, COUT =Ceramic 0.1μF
0.01
0.1
1
10
100
1000
0 50 100 150
Output Current IOUT [mA]
ESR[Ω]
0.01
0.1
1
10
100
1000
0 50 100 150
Output Current IOUT [mA]
ESR [Ω]