
2SC2655 NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 4
www.unisonic.com.tw QW-R211-013,E
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER SYMBOL RATING UNIT
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Collector Current Ic 2 A
Collector Current(Pulse) Icp(Note 1) 3 A
Base Current IB 0.5 A
SOT-23 350
Collector Power Dissipation TO-92NL Pc 900 mW
Junction Temperature TJ 150 °C
Storage Temperature TSTG -55 ~ +150 °C
Note: 1. PW≦16ms, Duty Cycle≦50%.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Emitter Breakdown Voltage BVCEO I
C= 10mA, IB= 0 50 V
Collector Cut-off Current ICBO V
CB=50V, IE= 0 1.0 μA
Emitter Cut-off Current IEBO V
EB= 5V, IC=0 1.0 μA
hFE(1) V
CE=2V, Ic=0.5A 70 240
DC Current Gain hFE(2) V
CE=2V, Ic=1.5A 40
Collector-Emitter Saturation Voltage VCE(SAT) I
C=1A, IB=0.05A 0.5 V
Base- Emitter Saturation Voltage VBE(SAT) I
C=1A, IB=0.05A 1.2 V
Transition Frequency fT V
CE=2V, IC=0.5A 100 MHz
Collector Output Capacitance Cob VCB= 10V, IE= 0, f=1MHz 30 pF
Switching Time(Turn-on Time) tON
10Ω
IB1= -IB2=0.05A
DUTY CYCLE≦1%
0.1 μS
CLASSIFICATION OF hFE(1)
RANK O Y
RANGE 70-140 120-240