2SC2655-O-AE3-R - Unisonic Technologies Co., Ltd.

UNISONIC TECHNOLOGIES CO., LTD

2SC2655 NPN SILICON TRANSISTOR

www.unisonic.com.tw 1 of 4

POWER AMPLIFIER

APPLICATIONS POWER

SWITCHING APPLICATIONS

 FEATURES

* Low saturation voltage: VCE(SAT)= 0.5V (Max.)

* High speed switching time: tstg=1.0μs (Typ.)

Lead-free: 2SC2655L

Halogen-free: 2SC2655G

 ORDERING INFORMATION

Ordering Number Pin Assignment

Normal Lead Free Halogen Free Package 1 2 3 Packing

2SC2655-x-AE3-R 2SC2655L-x-AE3-R 2SC2655Gx-AE3-R SOT-23 E B C Tape Reel

2SC2655-x-T9N-B 2SC2655L-x-T9N-B 2SC2655Gx-T9N-B TO-92NL E C B Tape Box

2SC2655-x-T9N-K 2SC2655L-x-T9N-K 2SC2655Gx-T9N-K TO-92NL E C B Bulk

2SC2655 NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 2 of 4

www.unisonic.com.tw QW-R211-013,E

 ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )

PARAMETER SYMBOL RATING UNIT

Collector-Base Voltage VCBO 50 V

Collector-Emitter Voltage VCEO 50 V

Emitter-Base Voltage VEBO 5 V

Collector Current Ic 2 A

Collector Current(Pulse) Icp(Note 1) 3 A

Base Current IB 0.5 A

SOT-23 350

Collector Power Dissipation TO-92NL Pc 900 mW

Junction Temperature TJ 150 °C

Storage Temperature TSTG -55 ~ +150 °C

Note: 1. PW≦16ms, Duty Cycle≦50%.

2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

Collector Emitter Breakdown Voltage BVCEO I

C= 10mA, IB= 0 50 V

Collector Cut-off Current ICBO V

CB=50V, IE= 0 1.0 μA

Emitter Cut-off Current IEBO V

EB= 5V, IC=0 1.0 μA

hFE(1) V

CE=2V, Ic=0.5A 70 240

DC Current Gain hFE(2) V

CE=2V, Ic=1.5A 40

Collector-Emitter Saturation Voltage VCE(SAT) I

C=1A, IB=0.05A 0.5 V

Base- Emitter Saturation Voltage VBE(SAT) I

C=1A, IB=0.05A 1.2 V

Transition Frequency fT V

CE=2V, IC=0.5A 100 MHz

Collector Output Capacitance Cob VCB= 10V, IE= 0, f=1MHz 30 pF

Switching Time(Turn-on Time) tON

10Ω

IB1= -IB2=0.05A

DUTY CYCLE≦1%

0.1 μS

 CLASSIFICATION OF hFE(1)

RANK O Y

RANGE 70-140 120-240