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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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BC327 — PNP Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC327 Rev. 1.1.0
October 2014
BC327
PNP Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for AF-Driver Stages and Low-Power Output Stages
• Complement to BC337 / BC338
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
BC327BU BC327 TO-92 3L Bulk
BC32716BU BC32716 TO-92 3L Bulk
BC32716TA BC32716 TO-92 3L Ammo
BC32725BU BC32725 TO-92 3L Bulk
BC32725TA BC32725 TO-92 3L Ammo
BC32740BU BC32740 TO-92 3L Bulk
BC32740TA BC32740 TO-92 3L Ammo
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage -50 V
VCEO Collector-Emitter Voltage -45 V
VEBO Emitter-Base Voltage -5 V
ICCollector Current (DC) -800 mA
TJJunction Temperature 150 °C
TSTG Storage Temperature -55 to 150 °C
1. Collector 2. Base 3. Emitter
TO-92
1
BC327 — PNP Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC327 Rev. 1.1.0 2
Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
hFE Classification
Symbol Parameter Value Unit
PDPower Dissipation 625 mW
Derate Above 25°C5.0mW/°C
RθJA Thermal Resistance, Junction-to-Ambient 200 °C/W
Symbol Parameter Conditions Min. Typ. Max. Unit
BVCEO Collector-Emitter Breakdown Voltage IC = -10 mA, IB = 0 -45 V
BVCES Collector-Emitter Breakdown Voltage IC = -0.1 mA, VBE = 0 -50 V
BVEBO Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 -5 V
ICES Collector Cut-Off Curren t VCE = -45 V, IB = 0 -2 -100 nA
hFE1 DC Current Gain VCE = -1 V, IC = -1 00 mA 100 630
hFE2 VCE = -1 V, IC = -300 mA 60
VCE(sat) Collector-Emitter Saturation Voltage IC = -500 mA, IB = -50 mA -0.7 V
VBE(on) Base-Emitter On Voltage VCE = -1 V, IC = -300 mA -1.2 V
fTCurrent Gain Bandwidth Product VCE = -5 V, IC = -10 mA,
f = 20 MHz 100 MHz
Cob Output Capacitance VCB = -10 V, IE = 0,
f = 1 MHz 12 pF
Classification 16 25 40
hFE1 100 ~ 250 160 ~ 400 250 ~ 630
hFE2 60 ~ 100 ~ 170 ~
BC327 — PNP Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC327 Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. Static Characteristic
Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 5. Base-Emitter On Voltage Figure 6. Gain Bandwidth Product
-1 -2 -3 -4 -5
-0
-100
-200
-300
-400
-500
P
T
= 600mW
I
B
= - 3.0mA
I
B
= - 2.0mA
I
B
= - 3.5mA
IB = - 1.0mA
I
B
= - 1.5mA
IB = - 0.5mA
I
B
= - 4.0mA
I
B
= - 2.5mA
I
B
= - 4.5mA
I
B
= - 5.0mA
IB = 0
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-10 -20 -30 -40 -50
-4
-8
-12
-16
-20
P
T
= 600mW
I
B
= - 80
μ
A
I
B
= - 70
μ
A
I
B
= - 60
μ
A
I
B
= - 50
μ
A
I
B
= - 40
μ
A
I
B
= - 30μA
I
B
= - 20
μ
A
I
B
= - 10
μ
A
IB = 0
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-0.1 -1 -10 -100 -1000
1
10
100
1000 PULSE
- 1.0V
VCE = - 2.0V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-0.1 -1 -10 -100 -1000
-0.01
-0.1
-1
-10
IC = 10 IB
PULSE
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
-0.4 -0.5 -0.6 -0.7 -0.8 -0.9
-0.1
-1
-10
-100
-1000
VCE = -1V
PULSE
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
-1 -10 -100
10
100
1000
VCE = -5.0V
fT[MHz], GAIN-BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
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1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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