1 - 2
© 2000 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 500 V
VDGR TJ= 25°C to 150°C; RGS = 1 MW500 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C32A
IDM TC= 25 °C, pulse width limited by TJM 120 A
IAR TC= 25 °C32A
EAS TC= 25°C 1.5 J
EAR TC= 25°C45mJ
dv/dt IS£ IDM, di/dt £ 100 A/ms, VDD £ VDSS, 5 V/ns
TJ£ 150°C, RG = 2 W
PDTC= 25°C 360 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 3 00 °C
Weight 6 g
HiPerFETTM Power MOSFET
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
PLUS 247
Features
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Fast intrinsic rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
Advantages
• Easy assembly
• Space savings
• High power density
G = Gate D = Drain
S = Source
98719A (7/00)
IXFX 32N50 VDSS = 500 V
ID25 = 32 A
RDS(on) = 0.15 W
trr £ 250 ns
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS= 0 V, ID = 1 mA 500 V
VDSS temperature coefficient 0.102 %/K
VGS(th) VDS= VGS, ID = 4 mA 2 4 V
VGS(th) temperature coefficient -0.206 %/K
IGSS VGS= ±20 VDC, VDS = 0 ±100 nA
IDSS VDS= 0.8 • VDSS TJ = 25°C 200 mA
VGS= 0 V TJ = 125°C1mA
RDS(on) VGS = 10 V, ID = 15A 0.15 W
Pulse test, t £ 300 ms, duty cycle d £ 2 %
Preliminary data sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 2
© 2000 IXYS All rights reserved
IXFX 32N50
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
gfs VDS = 10 V; ID = 0.5 ID25, pulse test 1 8 2 8 S
Ciss 4950 5450 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 6 20 7 30 p F
Crss 240 310 pF
td(on) 35 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 42 ns
td(off) RG= 2 W (External) 1 10 ns
tf26 ns
Qg(on) 227 300 nC
Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 29 40 nC
Qgd 110 145 nC
RthJC 0.35 K/W
RthCK 0.15 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 32 A
ISM Repetitive; 128 A
pulse width limited by TJM
VSD IF = IS, VGS = 0 V, 1 .5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr 250 ns
QRM 0.85 mC
IRM 8A
IF = IS
-di/dt = 100 A/ms,
VR = 100 V
PLUS247TM Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
