an AMP company Zero Bias Detector Diodes Features Can Be Used Without External DC Bias @ Exhibit Uniform Rv Characteristics High Voltage Sensitivity e Available in Packages, Chips and Beam Leads Description This family of Zero Bias Detector (ZBD) diodes is designed for use in video detectors and power monitors eliminating the need to provide external DC bias to the diode. These diodes offer good output sensitivity and low junc- tion capacitance. M/A-COMs Zero Bias Detector diodes are available in two hermetic packages, and as bondable chips and beam leads. This series of diodes are offered with video imped- ances of 0.5 to 15 k Ohms at zero bias. Applications This series of diodes is useful as video detectors and power monitors through K-band and do not require exter- nal DC bias. Specifications Subject to Change Without Notice. -56 V 2.00 Case Styles (See appendix for complete dimen- sions) e 965A CATHODE Oo oO Oo _ 119 135A eel 186 M/A-COM, Inc. North America: Tel. (800) 366-2266 ~ Fax (800) 618-8883 a Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 m Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020Zero Bias Detector Diodes For case style 119 (1mm from package) 200C for 5 sec (maximum) Specifications Subject to Change Without Notice. M/A-COM, Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 = Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 V 2.00 Schottky ZBD Beam Lead Diodes (Case Style 965A) Test Minimum? Rv34.5 Model Frequency Tss Minimum2 (k Ohms) Number Band (-dBm) Eo, mV (Minimum) (Maximum) MA40186 x 48 2 0.5 1.0 MA40186B X 50 8 2.0 5.0 MA40186C xX 52 10 5.0 10.0 MA40187D Ku 49 8 10.0 15.0 Silicon Packaged and Chip ZBD Diodes Minimum2:6 Rv3.4.5 Model! Case Tss Minimum? (k Ohms) Number Style ( -dBm) Eo, mV (Minimum) (Maximum) MA4E929 119 46 2 0.5 1.0 MA4E929A 419 48 5 1.0 2.0 MA4E929B 119 50 8 2.0 5.0 MA4E929C 119 50 10 5.0 10.0 MA4E929D 119 50 10 10.0 15.0 MA4E931A 135A 52 8 1.0 2.0 MA4E931C 135A 56 15 5.0 10.0 MA4E932 186 47 3 0.5 1.0 MA4E932A 186 48 5 1.0 2.0 MA4E932B 186 50 8 2.0 5.0 MA4E932C 186 50 10 5.0 10.0 MA4E932D 186 50 10 10.0 15.0 Notes: og: . _ 1. Schottky barrier diodes are thermocompression bonded in case Specifications @ Ta = +25C styles 119 and 186. Case style 135A is a bondabie chip. Other case styles may be available. For additional information, contact the factory. Maximum Ratings To order chip parts add 135A as the suffix to the part number, i.e., MA4E929A-135A. Only the MA4E929 series is available as a chip. Temperature Ratings: 2. Test conditions: Operating and Storage Temperature -65C to +150C For Tgs: Video Bandwidth = 1 MHz Noise Amplifier = 3.5 dB Power Ratings: Test Frequency: X-Band = 10 GHz Maxi ident RF 5W fi Ku-Band = 16 GHz aximum Peak incident RF Power 0.5 atts for Voltage Sensitivity: PIN = -30 dBm 1 usec maximum R, = 1M (Ohms) Maximum Peak CW RF Power 100 mW Test Frequency = as stated Both ratings at 25C. Derate linearly to 3. Higher Rv values are available on request. Contact the factory. 4. The nominal junction capacitance values are as follows: zero at maximum operating temperature. Diodes with Rv ~0.5 to 2.0 k Ohms, Cj ~0.30 pF (maximum) . . Diodes with Rv ~2.0 to 5.0 k Ohms, Cj ~0.25 pF (maximum) Solder Temperature Ratings: Diodes with Rv ~5.0 to 15.0 k Ohms, Cj ~0.20 pF (maximum) For case style 54, 186 230C for 5 sec 5. The nominal R, is ~30 Ohms maximum. 6. Test frequency band is X-Band. 5-57 wa Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020Zero Bias Detector Diodes Typical Performance Curves ZERO BIAS SCHOTTKY DETECTOR DIODE NOMINAL OUTPUT VOLTAGE AT 25C AND 10 GHZ WITH A FIXED TUNED HOLDER AN R, = 10K OHMS. 10V , > = 100 mV g < OlODES WITH a 2 somv Ay=0.5-1K OHMS > 5 = = DIODES WITH 2 Ay=1-2K OHMS 1mv 7; t } AL DIODES WITH Ry=10-15K OHMS 0.1 mV . 60 -60 -60 -30 -20 -10 0 10 2 INCIDENT POWER IN dBm AT 10 GHz V 2.00 ZERO BIAS SCHOTTKY DETECTOR VOLTAGE SENSITIVITY FOR DIODES WITH 2-8K OHM VIDEO IMPEDANCE. 1v = Sy >; 100 mv % 2 &. 5 3 & MV 10 mV = g o a T 4 5 imv CL LOL g = TEST CONDITIONS 28C F=10 GHz 100 uV NO DC BIAS = IN HOLDER FIX TUNE F FOR OPTIMUM TSS AT 25C AND 10K R 10: 10KQ Re 60 -50 -40 -30 -20 -10 0 POWER (dBm) ZERO BIAS SCHOTTKY DETECTOR VOLTAGE SENSITIVITY CHARACTERISTICS UNDER TEMP FOR DIODE WITH 2-8K OHM VIDEO IMPEDANCE. 1v 100 mV 10 mV tmv VOLTAGE OUTPUT 100 LV 100 80C CF=10GHz PR_=10 kN IN HOLDER FIX TUNED = FOR OPTIMUM TSS AT 25 C AND 10 K2 LOAD = Lf 10 nV 60 -50 40 -30 -20 -10 0 POWER (d3m) TSS CONVERSION FOR BANDWIDTHS OTHER THAN +10 +20 +10 +20 ZERO BIAS SCHOTTKY DETECTOR DYNAMIC RESISTANCE (RV) TEST BANDWIDTH. s vs POWER FOR DIODES OF DIFFERENT IMPEDANCE RANGES. a4 3 3 TEST CONDITIONS 5 ATSS (d8)=10 LOG. /BW/EW Feo GHz f,=10 KA | 5 2 IN HOLDER F1X TUNED a = FOR OPTIMUM TSS AT 3 g : ae 10K 0 o | : s | ap 1 z 2 - 2 2 2 6 4 1K : . | 2 4 | & os a 6 { Z 0.4 5 10 5.0 10.0 40 -30 -20 -10 0 +10 +20 | BANDWIDTH (MHz) POWER (dBm) Specifications Subject to Change Without Notice. 5-58 M/A-COM, inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 a Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 w Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020