© Semiconductor Components Industries, LLC, 2013
July, 2018 − Rev. 0
1Publication Order Number:
FDMS86581/D
FDMS86581
MOSFET, N-Channel,
POWERTRENCH),
60 V, 30 A, 15 mW
Features
•Typical RDS(on) = 12.5 mW at VGS = 10 V, ID = 30 A
•Typical QG(tot) = 13 nC at VGS = 10 V, ID = 25 A
•UIS Capability
•RoHS Compliant
Applications
•DC−DC Power Supplies
•AC−DC Power Supplies
•Motor Control
•Load Switching
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol Parameter Ratings Unit
VDSS Drain−to−Source Voltage 60 V
VGS Gate−to−Source Voltage ±20 V
IDDrain Current − Continuous
(VGS = 10) TC = 25°C (Note 1)
30 A
Pulsed Drain Current, TC = 25°CSee Figure 4
EAS Single Pulse Avalanche Energy
(Note 2)
13.5 mJ
PDPower Dissipation 50 W
Derate Above 25°C0.33 W/°C
TJ, TSTG Operating and Storage Temperature −55 to +175 °C
RqJC Thermal Resistance, Junction to Case 3°C/W
RqJA Maximum Thermal Resistance,
Junction to Ambient (Note 3)
50 °C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Current is limited by bondwire configuration.
2. Starting TJ = 25°C, L = 40 mH, IAS = 26 A, VDD = 60 V during inductor charging
and VDD = 0 V during time in avalanche.
3. RqJA is the sum of the junction−to−case and case−to−ambient thermal
resistance, where the case thermal reference is defined as the solder
mounting surface of the drain pins. RqJC is guaranteed by design, while RqJA
is determined by the board design. The maximum rating presented here is
based on mounting on a 1 in2 pad of 2 oz copper.
Power 56
(PQFN8 5x6)
CASE 483AE
See detailed ordering and shipping information on page 2
of this data sheet.
ORDERING INFORMATION
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N-Channel MOSFET
MARKING DIAGRAM
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FDMS86581 = Specific Device Code
$Y&Z&3&K
FDMS
86581
ELECTRICAL CONNECTION
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
Bottom
Top
Pin 1
S
GSS
D
DDD
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2
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking Device Package Shipping†
FDMS86581 FDMS86581 Power 56 3000 Units/
Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol Parameter Test Conditions Min Typ. Max. Units
OFF CHARACTERISTICS
BVDSS Drain−to−Source Breakdown Voltage ID = 250 mA, VGS = 0 V 60 − − V
IDSS Drain−to−Source Leakage Current VDS = 60 V,
VGS = 0 V
TJ = 25°C− − 1 A
TJ = 175°C (Note 4) − − 1 mA
IGSS Gate−to−Source Leakage Current VGS = ±20 V − − ±100 nA
ON CHARACTERISTICS
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 mA2.0 2.7 4.0 V
RDS(on) Drain to Source On Resistance ID = 30 A,
VGS = 10 V
TJ = 25°C−12.5 15.0 mW
TJ = 175°C (Note 4) −25.1 30.1 mW
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 30 V, VGS = 0 V, f = 1 MHz −881 −pF
Coss Output Capacitance −281 −pF
Crss Reverse Transfer Capacitance −15 −pF
RGGate Resistance f = 1 MHz −3.1 −W
Qg(ToT) Total Gate Charge VGS = 0 to 10 V, VDD = 30 V, ID = 25 A −13 19 nC
Qg(th) Threshold Gate Charge VGS = 0 to 2 V, VDD = 30 V, ID = 25 A −2−nC
Qgs Gate−to−Source Gate Charge VDD = 30 V, ID = 25 A −4−nC
Qgd Gate−to−Drain “Miller” Charge −3−nC
SWITCHING CHARACTERISTICS
ton Turn−On Time VDD = 30 V, ID = 30 A, VGS = 10 V,
RGEN = 6 W
−−20 ns
td(on) Turn−On Delay −9−ns
trRise Time −5−ns
td(off) Turn−Off Delay −15 −ns
tfFall Time −4−ns
toff Turn−Off Time − − 28 ns
DRAIN−SOURCE DIODE CHARACTERISTICS
VSD Source−to−Drain Diode Voltage ISD = 30 A, VGS = 0 V − − 1.25 V
ISD = 15 A, VGS = 0 V − − 1.2 V
trr Reverse−Recovery Time IF = 30 A, dlSD/dt = 100 A/ms, VDD = 48 V −37 55 ns
Qrr Reverse Recovery Charge −22 33 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
FDMS86581
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3
Figure 1. Normalized Power Dissipation
vs. Case Temperature
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (5C)
POWER DISSIPATION MULTIPLIER
0 50 75 100 125 150 175 200
ID, DRAIN CURRENT (A)
0
10
20
30
40
50
TC, CASE TEMPERATURE (5C)
CURRENT LIMITED
BY SILICON
CURRENT LIMITED
BY PACKAGE
VGS = 10 V
Figure 2. Maximum Continuous Drain Current
vs. Case Temperature
NORMALIZED THERMAL IMPED-
ANCE, ZqJC
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
DUTY CYCLE − DESCENDING ORDER
SINGLE PULSE
D = 0.50
0.20
0.10
0.05
0.02
0.01
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM ×ZqJC ×RqJC + TC
10−510−410−310−210−1100101
0.01
0.1
1
2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
TYPICAL CHARACTERISTICS
FDMS86581
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IDM, PEAK CURRENT (A)
t, RECTANGULAR PULSE DURATION (s)
Figure 4. Peak Current Capability
VGS = 10 V
FOR TEMPERATURES ABOVE
25°C DERATE PEAK CURRENT
AS FOLLOWS:
10−510−410−310−210−1100101
10
100
1000
TYPICAL CHARACTERISTICS (continued)
TC = 25°C
I = I25
175 − TC
150
0.1
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
0.01
0.1
1
10
100
1000
1 10 100 500
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
TC = 25°C
100 ms
1 ms
10 ms
100 ms
Figure 5. Forward Bias Safe Operating Area
1
10
100
STARTING TJ = 25°C
0.001 0.01 0.1 1 10
tAV, TIME IN AVALANCHE (ms)
IAS, AVALANCHE CURRENT (A)
STARTING TJ = 150°C
If R = 0
tAV = (L)(IAS)/(1.3 × RATED BVDSS − VDD)
If R ≠ 0
tAV = (L/R)In[(IAS × R)/(1.3 × RATED BVDSS − VDD) + 1]
Figure 6. Unclamped Inductive
Switching Capability
NOTE: Refer to ON Semiconductor Application Notes
AN7514 and AN7515.
TJ = 175°C TJ = 25°C
TJ = −55°C
PULSE DURATION = 250 ms
DUTY CYCLE = 0.5% MAX
VDD = 5 V
345 678910
0
20
40
60
80
100
VGS, GATE TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 7. Transfer Characteristics
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.1
1
10
100
VSD, BODY DIODE FORWARD VOLTAGE (V)
IS, REVERSE DRAIN CURRENT (A)
VGS = 0 V
TJ = 175°CTJ = 25°C
Figure 8. Forward Diode Characteristics
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TYPICAL CHARACTERISTICS (continued)
100
Figure 9. Saturation Characteristics
80
60
40
20
0
012345
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
250 ms PULSE WIDTH
TJ = 25°C
VGS
15 V Top
10 V
8 V
7 V
6 V
5.5 V
5 V Bottom
100
Figure 10. Saturation Characteristics
80
60
40
20
0
012345
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
250 ms PULSE WIDTH
TJ = 175°C
VGS
15 V Top
10 V
8 V
7 V
6 V
5.5 V
5 V Bottom
PULSE DURATION = 250 ms
DUTY CYCLE = 0.5% MAX
ID = 30 A
TJ = 175°C
TJ = 25°C
100
80
60
40
20
056 7
VGS, GATE TO SOURCE VOLTAGE (V)
rDS(on), DRAIN TO SOURCE ON−
RESISTANCE (mW)
120
140
8910
Figure 11. RDSON vs. Gate Voltage
PULSE DURATION = 250 ms
DUTY CYCLE = 0.5% MAX
1.5
1.0
0.5
NORMALIZED DRAIN TO SOURCE
ON−RESISTANCE
2.0
2.5
−80 −40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (5C)
ID = 30 A
VGS = 10 V
Figure 12. Normalized RDSON vs. Junction
Temperature
−80 −40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (5C)
NORMALIZED GATE
THRESHOLD VOLTAGE
1.3
1.1
0.9
0.7
0.5
0.3
VGS = VDS
ID = 250 mA
Figure 13. Normalized Gate Threshold Voltage
vs. Temperature
1.5
1.0
0.5
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
2.0
2.5
−80 −40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (5C)
ID = 5 mA
Figure 14. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
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TYPICAL CHARACTERISTICS (continued)
Figure 15. Capacitance vs. Drain
to Source Voltage
10
1
0.1 1 024
Qg, GATE CHARGE (nC)
VGS, GATE TO SOURCE VOLTAGE (V)
10
8
6
4
2
0
ID = 25 A
10 100
100
1000
10000
VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
f = 1 MHz
VGS = 0 V
Ciss
Coss
Crss
6 8 10 12 14
VDD = 30 V
VDD = 24 V
VDD = 36 V
Figure 16. Gate Charge vs. Gate to Source
Voltage
FDMS86581
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