TM FQP4N90C/FQPF4N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. * * * * * * 4A, 900V, RDS(on) = 4.2 @VGS = 10 V Low gate charge ( typical 17nC) Low Crss ( typical 5.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! G! G DS TO-220 TO-220F GD S FQP Series FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current FQP4N90C FQPF4N90C 900 - Continuous (TC = 100C) Units V 4 4* A 2.3 2.3 * A 16 * A IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 4 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) (Note 1) 14 4.5 -55 to +150 mJ V/ns W W/C C 300 C dv/dt PD TJ, TSTG TL - Pulsed (Note 1) 16 (Note 3) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 30 V 570 mJ 140 1.12 47 0.38 * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol RJC Parameter Thermal Resistance, Junction-to-Case RCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- C/W RJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 C/W (c)2003 Fairchild Semiconductor Corporation FQP4N90C 0.89 FQPF4N90C 2.66 Units C/W Rev. A, June 2003 http://store.iiic.cc/ FQP4N90C/FQPF4N90C QFET Symbol TC = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units 900 -- -- V -- 1.05 -- V/C VDS = 900 V, VGS = 0 V -- -- 10 A VDS = 720 V, TC = 125C -- -- 100 A Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 3.0 -- 5.0 V -- 3.5 4.2 -- 5 -- S -- 740 960 pF -- 65 85 pF -- 5.6 7.3 pF Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C IDSS IGSSF IGSSR Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 2 A gFS Forward Transconductance VDS = 50 V, ID = 2 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 450 V, ID = 4 A, RG = 25 (Note 4, 5) VDS = 720 V, ID = 4 A, VGS = 10 V (Note 4, 5) -- 25 60 ns -- 50 110 ns -- 40 90 ns -- 35 80 ns -- 17 22 nC -- 4.5 -- nC -- 7.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 4 A ISM -- -- 16 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 4 A Drain-Source Diode Forward Voltage -- -- 1.4 V trr Reverse Recovery Time -- 450 -- ns Qrr Reverse Recovery Charge -- 3.5 -- C VGS = 0 V, IS = 4 A, dIF / dt = 100 A/s (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 67 mH, IAS = 4A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 4A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2003 Fairchild Semiconductor Corporation Rev. A, June 2003 http://store.iiic.cc/ FQP4N90C/FQPF4N90C Electrical Characteristics FQP4N90C/FQPF4N90C Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] 0 10 1 10 ID, Drain Current [A] 1 10 -1 10 o 150 C 0 10 o -55 C o 25 C Notes : 1. 250 s Pulse Test 2. TC = 25 Notes : 1. VDS = 50V 2. 250 s Pulse Test -2 -1 10 -1 0 10 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 10 1 10 IDR , Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance 8 VGS = 10V 6 4 VGS = 20V 2 Note : TJ = 25 0 10 150 Notes : 1. VGS = 0V 2. 250 s Pulse Test 25 -1 0 2 4 6 10 8 0.2 0.4 0.6 ID, Drain Current [A] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 1.0 1.2 1.4 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 12 1200 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss 800 600 Coss Notes ; 1. VGS = 0 V 2. f = 1 MHz 400 200 Crss VDS = 180V 10 VGS , Gate-Source Voltage [V] 1000 Capacitance [pF] 0.8 VSD, Source-Drain voltage [V] VDS = 450V VDS = 720V 8 6 4 2 Note : ID = 4A 0 -1 10 0 10 0 1 0 10 5 10 15 20 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics (c)2003 Fairchild Semiconductor Corporation Figure 6. Gate Charge Characteristics Rev. A, June 2003 http://store.iiic.cc/ FQP4N90C/FQPF4N90C Typical Characteristics (Continued) 3.0 1.2 2.5 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 2.0 A 0.5 0.0 -100 200 -50 0 150 200 Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 2 2 10 10 Operation in This Area is Limited by R DS(on) Operation in This Area is Limited by R DS(on) 100 s 1 ms 10 ms 100 ms DC 0 10 Notes : -1 10 10 s 100 s 1 10 ID, Drain Current [A] 1 10 ID, Drain Current [A] 100 o TJ, Junction Temperature [ C] o 1 ms 10 ms 100 ms 0 10 DC Notes : -1 10 o 1. TC = 25 C 1. TC = 25 C o o 2. TJ = 150 C 3. Single Pulse 2. TJ = 150 C 3. Single Pulse -2 -2 10 50 TJ, Junction Temperature [ C] o 10 0 1 10 2 10 3 10 10 0 10 1 10 2 10 3 10 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 9-1. Maximum Safe Operating Area for FQP4N90C Figure 9-2. Maximum Safe Operating Area for FQPF4N90C 5 ID, Drain Current [A] 4 3 2 1 0 25 50 75 100 125 150 TC, Case Temperature [] Figure 10. Maximum Drain Current vs Case Temperature (c)2003 Fairchild Semiconductor Corporation Rev. A, June 2003 http://store.iiic.cc/ (Continued) 0 10 (t), T h e rm a l R e s p o n s e FQP4N90C/FQPF4N90C Typical Characteristics D = 0 .5 0 .2 10 -1 N o te s : 1 . Z J C( t ) = 0 . 8 9 / W M a x . 2 . D u t y F a c t o r , D = t1 / t 2 3 . T J M - T C = P D M * Z J C( t ) 0 .1 0 .0 5 0 .0 2 PDM JC 0 .0 1 Z s in g le p u ls e 10 t1 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] 10 D = 0 .5 0 0 .2 N o te s : 1 . Z J C ( t ) = 2 .6 6 / W M a x . 2 . D u t y F a c to r , D = t 1 / t 2 3 . T J M - T C = P D M * Z JC( t ) 0 .1 0 .0 5 10 -1 0 .0 2 PDM 0 .0 1 t1 JC ( t) , T h e r m a l R e s p o n s e Figure 11-1. Transient Thermal Response Curve for FQP4N90C Z t2 s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11-2. Transient Thermal Response Curve for FQPF4N90C (c)2003 Fairchild Semiconductor Corporation Rev. A, June 2003 http://store.iiic.cc/ FQP4N90C/FQPF4N90C Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50K Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V ID (t) VDS (t) VDD tp tp (c)2003 Fairchild Semiconductor Corporation Time Rev. A, June 2003 http://store.iiic.cc/ FQP4N90C/FQPF4N90C Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop (c)2003 Fairchild Semiconductor Corporation Rev. A, June 2003 http://store.iiic.cc/ TO-220 4.50 0.20 2.80 0.10 (3.00) +0.10 1.30 -0.05 18.95MAX. (3.70) o3.60 0.10 15.90 0.20 1.30 0.10 (8.70) (1.46) 9.20 0.20 (1.70) 9.90 0.20 1.52 0.10 10.08 0.30 (1.00) 13.08 0.20 ) (45 1.27 0.10 0.80 0.10 2.54TYP [2.54 0.20] +0.10 0.50 -0.05 2.40 0.20 2.54TYP [2.54 0.20] 10.00 0.20 Dimensions in Millimeters (c)2003 Fairchild Semiconductor Corporation Rev. A, June 2003 http://store.iiic.cc/ FQP4N90C/FQPF4N90C Package Dimensions (Continued) 3.30 0.10 TO-220F 10.16 0.20 2.54 0.20 o3.18 0.10 (7.00) (1.00x45) 15.87 0.20 15.80 0.20 6.68 0.20 (0.70) 0.80 0.10 ) 0 (3 9.75 0.30 MAX1.47 #1 +0.10 0.50 -0.05 2.54TYP [2.54 0.20] 2.76 0.20 2.54TYP [2.54 0.20] 9.40 0.20 4.70 0.20 0.35 0.10 Dimensions in Millimeters (c)2003 Fairchild Semiconductor Corporation Rev. A, June 2003 http://store.iiic.cc/ FQP4N90C/FQPF4N90C Package Dimensions TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet SeriesTM BottomlessTM FAST CoolFETTM FASTrTM CROSSVOLTTM FRFETTM DOMETM GlobalOptoisolatorTM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I3 http://store.iiic.cc/