©2003 Fairchild Semiconductor Corporation Rev. A, June 2003
FQP4N90C/FQPF4N90C
QFETTM
FQP4N90C/FQPF4N90C
900V N-Ch annel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
• 4A, 900V, RDS(on) = 4.2Ω @VGS = 10 V
• Low gate charge ( typical 17nC)
• Low Crss ( typical 5.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximu m Ratings TC = 25°C unless otherwise noted
* Drain current limited by maximum junction temperature.
Thermal Characteri stics
Symbol Parameter FQP4N90C FQPF4N90C Units
VDSS Drain-Source Voltage 900 V
IDDrain Current - Continuous (TC = 25°C) 44 *A
- Continuous (TC = 100°C) 2.3 2.3 * A
IDM Drain Current - Pulsed (Note 1) 16 16 * A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 570 mJ
IAR Avalanche Current (Note 1) 4A
EAR Repetitive Avalanche Energy (Note 1) 14 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PDPower Dissipation (TC = 25°C) 140 47 W
- Derate above 25°C 1.12 0.38 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TLMaximum lead temperature for soldering purposes,
1/8" from case for 5 seconds 300 °C
Symbol Parameter FQP4N90C FQPF4N90C Units
RθJC Thermal Resistance, Junction-to-Case 0.89 2.66 °C/W
RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
TO-220
FQP Series
GSD TO-220F
FQPF Series
GS
D
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Rev. A, June 2003
FQP4N90C/FQPF4N90C
©2003 Fairchild Semiconductor Corporation
Electrical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 67 mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Symbol Parame ter Test Condit i ons Min Typ Max Units
Off Characteristics
BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = 250 µA900 -- -- V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C -- 1.05 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 900 V, VGS = 0 V -- -- 10 µA
VDS = 720 V, TC = 125°C -- -- 100 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteri st ics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA3.0 -- 5.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 2 A -- 3.5 4.2 Ω
gFS Forward Transconductance VDS = 50 V, ID = 2 A ( Note 4) -- 5 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 740 960 pF
Coss Output Capacitance -- 65 85 pF
Crss Reverse Transfer Capacitance -- 5.6 7. 3 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 450 V, ID = 4 A,
RG = 25 Ω
(Note 4, 5)
-- 25 60 ns
trTurn-On Rise Time -- 50 110 ns
td(off) Turn-Off D e l a y Time -- 40 90 ns
tfTurn -Off Fa ll Time -- 35 80 ns
QgTotal Gate Ch arge VDS = 720 V, ID = 4 A,
VGS = 10 V
(Note 4, 5)
-- 17 22 nC
Qgs Gate-Source Charge -- 4.5 -- nC
Qgd Gate-Drain Charge -- 7.5 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 4 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 16 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, I S = 4 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, I S = 4 A ,
dIF / dt = 100 A/µs (Note 4)
-- 450 -- ns
Qrr Reverse Recovery Charge -- 3.5 - - µC
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Rev. A, June 2003©2003 Fairchild Semiconductor Corporation
FQP4N90C/FQPF4N90C
02468
2
4
6
8
10
VGS = 20V
VGS = 10V
$ Note : TJ = 25%
RDS(ON) [&],
Drain-Source On-Resistance
ID, Drain Current [A]
10-1 100101
0
200
400
600
800
1000
1200 Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
$ Notes ;
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
0 5 10 15 20
0
2
4
6
8
10
12
VDS = 450V
VDS = 180V
VDS = 720V
$ Note : ID = 4A
VGS, Gate-Source Voltage [V]
QG, T otal Gate Ch ar g e [n C]
0.2 0.4 0.6 0.8 1.0 1.2 1.4
10-1
100
101
150%
$ Notes :
1. VGS = 0V
2. 250's Pulse Test
25%
IDR , Reverse Drain Current [A]
VSD, Source-Drain voltage [V]
246810
10-1
100
101
VGS, Gate-Source Voltage [V]
150oC
25oC-55oC
$ Notes :
1. VDS = 50V
2. 250's Pulse Te st
ID, Drain Current [A]
Typical Characteristics
Figure 5. Capacitanc e Ch a racteristics Figure 6. Gate Charge C haracteris tics
Figure 3. On-Resistanc e Variatio n vs
Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 1. On- R egi on Character ist ic s Figure 2. Transfe r Characteristics
10-1 100101
10-2
10-1
100
101 VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
$ No tes :
1. 250's Pulse Test
2. TC = 25%
ID, Drain Cur re n t [A]
VDS, D ra in-Sourc e Vo lta g e [V]
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Rev. A, June 2003
FQP4N90C/FQPF4N90C
©2003 Fairchild Semiconductor Corporation
25 50 75 100 125 150
0
1
2
3
4
5
ID, Drain Current [A ]
TC, Case Te mperature [%
]
100101102103
10-2
10-1
100
101
102
10 µs
100 ms
DC
10 ms
1 ms100 µs
Ope ration in This Area
is Limited by R DS(on)
$ Notes :
1. TC = 2 5 oC
2. TJ = 150 oC
3. Single Pulse
ID, D rain C urrent [A]
VDS, Drain-Source Voltage [V]
100101102103
10-2
10-1
100
101
102
100 ms
DC
10 ms
1 ms 100 µs
Operation in This Area
is Limited by R DS(on)
$ N o tes :
1. TC = 25 oC
2. TJ = 150 oC
3. Sin gle P uls e
ID, D rain C urrent [A]
VDS, Drain-S ource Vo ltage [V]
Typical Characteristics (Continued)
Figure 9 -1. M aximum Safe O per at in g A re a
for FQP4N90C
Figure 10. Maximu m Drain Current
vs Case Temperat ure
Figu re 7. Breakdown Voltage Variati on
vs Temperature Figure 8. On-Resistance Variation
vs Temperature
Figure 9-2. Ma xi m um Saf e O perating Area
for FQPF4N90C
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
$
N o te s :
1 . V GS = 0 V
2 . ID = 250 'A
BV DSS , (N ormalized)
D rain-Source Breakdow n Voltage
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
$ N o te s :
1. VGS = 10 V
2. ID = 2.0 A
RDS(ON) , (Normalized)
Drain-Source On-Resistance
TJ, Junction Tempe rature [oC]
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Rev. A, June 2003
FQP4N90C/FQPF4N90C
©2003 Fairchild Semiconductor Corporation
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
$ No te s :
1 . Z (JC(t) = 0.89 %/W Ma x .
2 . Du ty F a c to r, D= t1/t2
3 . T JM - T C = PDM * Z(JC(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Z(JC
(t), T he rmal R e sp on se
t1, S quare Wave Pulse D uration [sec]
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
$ No te s :
1 . Z (JC(t) = 2.66 %/W M a x .
2 . D u ty F a c tor , D = t1/t2
3 . T JM - T C = PDM * Z (JC(t)
s in g le p u ls e
D=0.5
0.02
0.2
0.05
0.1
0.01
Z(JC
(t), T h erma l R e sp o ns e
t1, S q u are W a ve P ulse D u ra tio n [se c]
Typical Characteristics (Continued)
Figure 11-1. Transient Th er m al Response Cur ve for FQP4N90C
Figure 11-2. Transient Thermal Res ponse Curve for FQPF4N90C
t1
PDM
t2
t1
PDM
t2
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Rev. A, June 2003
FQP4N90C/FQPF4N90C
©2003 Fairchild Semiconductor Corporation
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
Charge
VGS
10V Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50K)
200nF
12V
Same Type
as DUT
Charge
VGS
10V Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50K)
200nF
12V
Same Type
as DUT
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS RL
DUT
RG
VGS
EAS =LI
AS2
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
ID
t p
EAS =LI
AS2
----
2
1
EAS =LI
AS2
----
2
1
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
ID
ID
t p
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Rev. A, June 2003
FQP4N90C/FQPF4N90C
©2003 Fairchild Semiconductor Corporation
Peak Diode Recovery dv/dt Test Circuit & Waveform s
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD con troll ed by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pu lse P eri od
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD con troll ed by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pu lse P eri od
--------------------------
D = Gate Pulse Width
Gate Pu lse P eri od
--------------------------
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Rev. A, June 2003
FQP4N90C/FQPF4N90C
©2003 Fairchild Semiconductor Corporation
Package Dimensions
4.50 ±0.20
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10 2.40 ±0.20
10.00 ±0.20
1.27 ±0.10
ø3.60 ±0.10
(8.70)
2.80 ±0.1015.90 ±0.20
10.08 ±0.30 18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20 ±0.2013.08 ±0.20
1.30 ±0.10
1.30 +0.10
–0.05
0.50 +0.10
–0.05
2.54TYP
[2.54 ±0.20]2.54TYP
[2.54 ±0.20]
TO-220
Dimensions in Millimeters
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Rev. A, June 2003
FQP4N90C/FQPF4N90C
©2003 Fairchild Semiconductor Corporation
Package Dimensions (Continued)
(7.00) (0.70)
MAX1.47
(30°)
#1
3.30 ±0.10
15.80 ±0.20
15.87 ±0.20
6.68 ±0.20
9.75 ±0.30
4.70 ±0.20
10.16 ±0.20
(1.00x45°)
2.54 ±0.20
0.80 ±0.10
9.40 ±0.20
2.76 ±0.20
0.35 ±0.10
ø3.18 ±0.10
2.54TYP
[2.54 ±0.20]2.54TYP
[2.54 ±0.20]
0.50 +0.10
–0.05
TO-220F
Dimensions in Millimeters
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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