54 DEPesezses ooosbin a . 6427525 N E C ELECTRONICS INC see TENTATIVE SPECIFICATION 59C 05611 D T-41-05 ~~ wwe ELECTRON DEVICE DAD,VD APPLICATION AlGaAs DOUBLE HETEROSTRUCTURE LASER DIODE LASER DIODE NDL3000 DESCRIPTION NDL3000 laser diode is developed for DAD(Digital Audio Disk), Video Disk optical head and non impact laser printer. The PCW(Plano Convex Waveguide) structure can achieve stable single-mode operation both longitudinal and transverse mode, PACKAGE DIMENSIONS in millimeters x Junction Chip Location [4X], [4]<0.05 |4Z|<0.05 [467], |4611<2" Kovar Glass (N= 1.53) (4540.1) 1540.1 12.5 MIN. P.C.D. 2.54 w 1. PD (negative bias) PD?LD 2, LD (negative bias) 1 2 3. Case (positive bias) ELECTRO-OPTICAL CHARACTERISTICS (Ta=25 C) FEATURES @ Accurate chip location. Visible wavelength, A\g=780 nm. @ Internal PIN detecter. @ Single mode. ABSOLUTE MAXIMUM RATINGS (Tg=25 C) Optical Output Power Po 8.0 mW Reverse Voltage VR 2.0 Vv Operating Temperature Typ, 10 to +70 c Storage Temperature Tstg 55to+125 C Monitor PD Reverse Voltage Vr 30 Vv Forward Current . lp 100 mA CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Forward Voltage VE 19 25 Vv IF =lih+20 mA Threshold Current lth 50 80 mA Optical Output Power Po 3.0 5.0 mw Ip = ly, + 20 MA Monitor Current Im 0.5 1.0 2.0 mA Po= 3.0 mW, VR = 16 V Center Wavelength do 760 780 800 nm Po=3.0 mW Half Power Spectral Width Ar 1.0 nm Po=3.0 mW Beam Spread (Vertical) 204 40 .- 50 Deg. Beam Spread (Lateral) 204 10 -12 Deg. a a acitance of C 5 10 pF VR=15V Dark Current of Monitor PD -Ip 100 nA VR=15V NEC cannot assume any responsibility for any circuits shown or represent that they are free from patent infringament. NEC reserves the right to make changes at any time without notice in order to improve design and supply the best product possible. NEC Corporation 1983 NEC CorporationNDL3000 S41 DeBfeue7ses ooosue o N: E Cc ELECTRON DEVICE "6427525 NE C ELECTRONICS INC 59C 05612 D_ T-41-05 TYPICAL CHARACTERISTICS (Ta= 25 c) OPTICAL OUTPUT POWER vs. FORWARD CURRENT >) 25 45 65 Te=15 GC | 35 55 2 E L g o a ~ 3 Qa = o 3 s a ra 0 20 40 60 80 100 120 140 Ip Forward CurrentmA o) FORWARD CURRENT vs. Mo . FORWARD VOLTAGE PORWARD CURRENT 100 2500 80 . 2000 | | i / # L / 60 1500 ) B 5 oO 3 . Zz - 2 40 = 1000 oO v = L 20 / 500 9 05 10 15 2.0 2.5 0 20 40 60 80 VeForward VoltageV INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER WAVLENGTH CLASS Illb LASER PRODUCT 100 ) \pForward CurrentmA NEC Corporation . INTERNATIONAL ELECTRON DEVICES DIV. SUMITOMO MITA Building, 37-8, Shiba Gochome, Minato-ku, Tokyo 108, Japan Tel: Tokyo 456-3111, Telex Address: NECTOK J22686 Cable Address: NEC TOKYO LD1104B JUNE2084M Printed in Japan