COMSET SEMICONDUCT ORS 1/3
2N3442
2N4347
NPN silicon transistors designed for applications in industrial and commercial equipment including high
fidelity audio amplifiers, series and shunts regulators and power switches.
• Low Collector-Emitter Saturation Voltage –
VCE(sat) = 1.0 Vdc (Max) @ IC = 2.0 Adc – 2N4347
• Collector-Emitter Sustaining Voltage-
VCEO(sus) = 120 Vdc (Min) – 2N4347
140 Vdc (Min) – 2N3442
• Excellent Second-Breakdown Capability
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
2N4347 120
VCEO #Collector-Emitter Voltage 2N3442 140 V
2N4347 140
VCB Collector-Base Voltage 2N3442 160 Vdc
2N4347
VEB Emitter-Base Voltage 2N3442 7.0 Vdc
2N4347 5.0
Continuous 2N3442 10
2N4347 10
ICCollector Current Peak 2N3442 15 (**)
Adc
2N4347 3.0
Continuous 2N3442 7.0
2N4347 8.0
IBBase Current Peak 2N3442 -
Adc
2N4347 100
@ TC = 25° 2N3442 117
2N4347 0.57
PD
Total Device Dissipation
Derate
above 25° 2N3442 0.67
Watts
W/°C
2N4347
TJJunction Temperature 2N3442 °C
2N4347
TSStorage Temperature 2N3442
-65 to +200 °C
(**) This data guarante ed in add ition to JEDEC regis t er ed data .
H
HI
IG
GH
H
P
PO
OW
WE
ER
R
I
IN
ND
DU
US
ST
TR
RI
IA
AL
L
T
TR
RA
AN
NS
SI
IS
ST
TO
OR
RS
S
COMSET SEMICONDUCT ORS 2/3
2N3442
2N4347
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
2N4347 1.75
RthJC Thermal Resistance, Junction to Case 2N3442 1.5 °C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol Ratings Test Condition(s) Min Typ Mx Unit
2N4347 120 - -
VCEO(SUS) Collector-Emitter
Sustaini ng Vo lta ge (1) IC=200 mAdc, IB=0 2N3442 140 - - Vdc
IC=0.1 Adc 2N4347 130 - -
VCER(SUS)
RBE=100Ω
ΩΩ
ΩCollector-Emitter
Sustaini ng Vo lta ge IC=0.2 Adc 2N3442 150 - - V
VCE=100 Vdc, IB=0 2N4347 - - 200
ICEO Collector-Emitter Curre nt
VCE=140 Vdc, IB=0 2N3442 200 mAdc
VCE=125 Vdc, VEB(off)=1.5 Vdc --2.0
VCE=120 Vdc, VEB(off)=1.5 Vdc,
TC = 150°C
2N4347 10
VCE=140 Vdc, VEB(off)=1.5 Vdc --5.0
ICEX Collector Cutoff Current
VCE=140 Vdc, VEB(off)=1.5 Vdc,
TC = 150°C
2N3442 --30
mAdc
IEBO Emitter Cutoff Current VBE=7.0 Vdc, IC=0 2N4347
2N3442 --5.0mAdc
IC=2.0 Adc, VCE=4.0 Vdc 15 - 60
IC=5.0 Adc, VCE=4.0 Vdc 2N4347 10 - -
IC=3.0 Adc, VCE=4.0 Vdc 20 - 70
hFE DC Current Gain
IC=10 Adc, VCE=4.0 Vdc 2N3442 4.0 - -
-
IC=2.0 Adc, IB= 200 mAd c --1.0
IC=5.0 Adc, IB=0.63 Adc 2N4347 --2.0
IC=3.0 Adc, IB=0.3 Adc --1.0
VCE(SAT)
Collector-Emitter
saturation Voltage
IC=10 Adc, IB=0.2 Adc 2N3442 --5.0
Vdc
COMSET SEMICONDUCT ORS 3/3
2N3442
2N4347
Symbol Ratings Test Condition(s) Min Typ Mx Unit
IC=2.0 Adc, VCE=4.0 Vdc --2.0
IC=5.0 Adc, VCE=4.0 Vdc 2N4347 --3.0
IC=3.0 Adc, VCE=4.0 Vdc --1.7
VBE(on) Base-Emitter Voltage
IC=10 Adc, VCE=4.0 Vdc 2N3442 --5.7
Vdc
VCE=4.0 Vdc, IC=0.5 Adc, f=1.0
kHz 2N4347 40 - -
hfe Small Signal Current Gain VCE=4.0 Vdc, IC=2.0 Adc, f=1.0
kHz 2N3442 12 - 72 -
VCE=4.0 Vdc, IC=0.5 Adc, ftest =
50 kHz 2N4347 200 - -
fTCurrent Gain – Bandwith
Product (2) VCE=4.0 Vdc, IC=2.0 Adc, ftest =
40 kHz 2N3442 80 - - kHz
VCE=67 Vdc, IC=1.5 Adc 2N4347 1.0 - -
Is/b
Second Breakdown
Collector Current VCE=78 Vdc, IC=1.5 Adc 2N3442 1.0 - - s
(1) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
(2) fT = |hfe| * ftest
MEC HANICAL DATA CASE T O-3
DIMENSIONS
mm inches
A 25,51 1,004
B 38,93 1,53
C 30,12 1,18
D 17,25 0,68
E 10,89 0,43
G 11,62 0,46
H 8,54 0,34
L 1,55 0,6
M 19,47 0,77
N 1 0,04
P 4,06 0,16
Pin 1 : Base
Pin 2 : Emitter
Case : Collector
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
