IS281-4GB
FEATURES
* Current transfer ratio
( CTR : MIN. 100% at IF = 5mA, VCE = 5V )
* Isolation voltage between input and output
( Viso = 3KVrms )
* Compact dual-in-line package
4 channels type
* Employs double transfer mold technology
* ROHS compliance
* G : Halogen Free
APPLICATIONS
* Hybrid substrates that require high density mounting.
* Programmable controllers
* System appliances, measuring instruments
Part No. IS281-4GB Page : 1 of 10
IS281-4GB
OUTLINE DIMENSIONS
*1. 3-digit date code.
*2. Rank shall be or shall not be marked.
Part No. : IS281-4GB Page : 2 of 10
IS281-4GB
TAPING DIMENSIONS
Quantities per Reel :
Package Type
Quantities (pcs) 2000
Part No. : IS281-4GB Page : 3 of 10
IS281-4GB
ABSOLUTE MAXIMUM RATING
( Ta = 25°C )
PARAMETER SYMBOL RATING UNIT
217 227 247
INPUT
Forward Current IF 50 mA
Reverse Voltage VR 6 V
Power Dissipation P 70 mW
OUTPUT
Collector - Emitter Voltage VCEO 80 V
Emitter - Collector Voltage VECO 7 V
Collector Current IC 50 mA
Collector Power Dissipation PC 150 100 mW
Total Power Dissipation Ptot 200 170 mW
*1 Isolation Voltage Viso 3,750 Vrms
Operating Temperature Topr -55 ~ +110 °C
Storage Temperature Tstg -55 ~ +150 °C
*2 Soldering Temperature Tsol 260 (10s) °C
*1. AC For 1 Minute, R.H. = 40 ~ 60%
Isolation voltage shall be measured using the following method.
(1) Short between anode and cathode on the primary side and between collector and
emitter on the secondary side.
(2) The isolation voltage tester with zero-cross circuit shall be used.
(3) The waveform of applied voltage shall be a sine wave.
*2. For 10 Seconds
Part No. : IS281-4GB Page : 4 of 10
IS281-4GB
ELECTRICAL - OPTICAL CHARACTERISTICS
( Ta = 25°C )
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
INPUT
Forward Voltage VF — 1.2 1.4 V IF=20mA
Reverse Current IR — — 10
μA VR=4V
Terminal Capacitance Ct — 30 250 pF V=0, f=1KHz
OUTPUT
Collector Dark Current ICEO — — 100 nA VCE=50V, IF=0
Collector-Emitter
Breakdown Volt age BVCEO 80 — — V
IC=0.1mA
IF=0
Emitter-Collector
Breakdown Volt age BVECO 7 — — V
IE=10μA
IF=0
TRANSFER
CHARACTERISTICS
Collector Current IC 2.5 — 30 mA
IF=5mA
VCE=5V
*1 Current Transfer Ratio CTR 100 — 600 %
Collector-Emitter
Saturation Voltage VCE(sat) — — 0.4 V
IF=2.4mA
IC=8mA
Isolation Resistance Riso 5×1010 1×1011 — Ω DC500V
40 ~ 60% R.H.
Floating Capacitance Cf — 0.6 1 pF V=0, f=1MHz
Response Time (Rise) tr — 3 18
μs VCE=2V, IC=2mA
RL=100Ω
Response Time (Fall) tf — 4 18
μs
*1 CTR I
I100%
C
F
=×
Part No. : IS281-4GB Page : 5 of 10
IS281-4GB
0
10
20
30
40
50
60
-25 0 25 50 75 100
Ambient Temperature,Ta (℃)
Forward Current, IF (mA)
1
10
100
0.40.60.81.01.21.41.61.82.0
Forward Voltage,V
F
( V )
Forward Current, I
F
( mA )
Ta=100
o
C
75
o
C
50
o
C
30
o
C
0
o
C
25
o
C
-3.2
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
-0.4
0.1 1 10 100
Forward Current, I
F
(mA)
Forward Voltage Temperature Coeffcient
△VF / △Ta (mV/oC)
1
10
100
1000
0.511.522.53
Pulse Forward Voltage, V
FP
(V )
Pulse Forward Current, I
FP
( m A )
P u lse Wi dths ≦10 us
Repetitive Frequency
= 100Hz
Ta = 25 ℃
Duty Ratio
Pulse width < = 100 s
P ulse Forward Current I (mA)
0.1 1
FP
0.010.001
10
10000
100
1000
Ta= 25 C
o
0.0001
0
20
40
60
80
100
120
140
160
-25 0 25 50 75 100 125
Ambient Temperature,Ta(℃)
Collector Power Dissipation, Pc(mW)
LTV-217
LTV-227
LTV-247
CHARACTERISTICS CURVES
Part No. : IS281-4GB Page : 6 of 10
Figure 1. Collector Power Dissipation vs. Ambient Temperature Figure 2. F
o
Figure 3. Forward Current vs. Forward Voltage Figure 4. Forward Voltage Temperature Coefficient vs.
Forward Current
Figure 5. Pulse Forward Current vs. Duty Cycle Ratio Figure 6. Pulse Forward Current vs. Pulse Forward
Voltage
IS281-4GB
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0 2 4 6 8 101214161820
Forward Current, I
F
(mA)
Collect-Emitt Voltage, V
CE
(V)
10mA
7mA
0.5mA
1mA
3mA
5m
A
0
10
20
30
40
50
0510
Collector-Emitter Voltage, V
CE
( V )
Collector Currrent, Ic ( mA)
50mA
30mA
20mA
10mA
I
F
=5mA
P
C
(Max)=150mV
0
5
10
15
20
25
30
35
40
45
50
00.51
Collector-Emitter Voltage, V
CE
( V )
C
ollector
C
urrrent, Ic
(
m
A)
50mA
30mA
20mA
10mA
5mA
I
F
=2mA
0.0001
0.001
0.01
0.1
0.0001 0.001 0.01 0.
Forward Current, I
F
(A)
Collector Current, Ic (A)
10V 5V
Vcc = 0. 4V
1.00E-10
1.00E-08
1.00E-06
-25-5 1535557595
Ambient Temperature, Ta(
O
C)
Collector Dark Current, I
CEO
(A)
V
CE
= 48V 24V 10V 5V
10
100
1000
0.0001 0.001 0.01 0.1
Forward Current, I
F
(A)
Current Tranfer Ratio CTR (%)
10V
5V
Vcc=0.4V
CHARACTERISTICS CURVES
Part No. : IS281-4GB Page : 7 of 10
Figure 7. Collector-Emitter Saturation Voltage vs. Forward
Current
Figure 8. Collector Current vs. Collector-Emitter Voltage
Figure 9. Collector Current vs. Small Collector-Emitter
Voltage
Figure 10. Collector Current vs. Forward Curent
Figure 11. Collector Dark Current vs. Ambient Temperature Figure 12. Current Transfer Ratio vs. Forward
Current
IS281-4GB
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
-30 5 40 75 11
0
Ambinet Tem
p
erature
,
Ta
(
o
C
)
Collector-Emitter Saturation Voltage (V)
I
F
=8mA
I
C
=2.4mA
I
F
=20mA
I
C
=1mA
I
F
=1mA
I
C
=0.2mA
0.1
1
10
100
-25 0 25 50 75 100
Ambient Temperature,Ta (
O
C )
C
o
ll
ector
C
urrent,
I
C
(
m
A
)
I
F
=0.5mA
1mA
5mA
20mA
25mA
0.1
1
10
100
-20 0 20 40 60 80 100
Ambient Temperature Ta(OC)
Switching Time, t(us)
T
ON
T
S
T
OFF
Vcc=5V
I
F
=16mA
R
L
=1.9kΩ
-8
-6
-4
-2
0
110100
Frequency ( kHz )
O
Vcc=5V
Ic=2mA
Ta=25
o
C
R
L
=100Ω
1KΩ
0.1
1
10
100
1000
1 10 100
Load Resistance, R
L
( KΩ)
Switching Time ( μS )
Toff
Ts
Ton
Ta = 25 ℃
Vcc = 5V
R
L
= 1 .9 kΩ
CHARACTERISTICS CURVES
Part No. : IS281-4GB Page : 8 of 10
Figure 13. Collector-Emitter Saturation Voltage vs. Ambient
Temperature
Figure 14. Collector Current vs. Ambient Temperature
Figure 15. Switching Time vs. Load Resistance Figure 16. Switching Time vs. Ambient Temperature
Figure 17. Frequency Response
IS281-4GB
SWITCHING TIME TEST CIRCUIT
TEMPERATURE PROFILE OF SOLDERING REFLOW
(1) One time soldering reflow is recommended within the condition of temperature and time
profile shown below.
Part No. : IS281-4GB Page : 9 of 10
IS281-4GB
TEMPERATURE PROFILE OF SOLDERING REFLOW
(2) When using another soldering method such as infrated ray lamp, the temperatu re m ay ris e
partially in the mold of the device.
Keep the temperature on the package of the device within the condition of above (1)
Notes:
- Isocom is continually improving the quality, reliability, function or design and
Isocom reserves the right to make changes without further notices.
- The products shown in this publication are designed for the general use in electronic
applications such as office automation equipment, communications devices,
audio/visual equipment, electrical application and instrumentation.
- For equipment/devices where high reliability or safety is required, such as space
applications, nuclear power control equipment, medical equipment, etc, please
contact our sales representatives.
- When requiring a device for any ”specific” application, please contact our sales in
advice.
- If there are any questions about the contents of this publication, please contact us at
your convenience.
- The contents described herein are subject to change without prior notice.
- Do not immerse unit’s body in solder paste.
Part No. : IS281-4GB Page : 10 of 10