Bulletin 27110 International . Rectifier !RFK6H150,IRFK6J150 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration High Current Capability. UL recognised E78996. Electrically Isolated Base Plate. Easy Assembly into Equipment. Description The HEX-pak utilises the well-proven HEXFET die, combining low on-state resistance with high transconductance. These superior Vos = 100V technology die are assembled by state of the art techniques into the TO-240 package, featuring 2.5kV rms isolation and solid M5 screw R = 10mQ connections. The small footprint means the package is highly suited to DS(on) power applications where space is a premium. Available in two versions, IRFK.H... for fast switching and IRFK.J... for oscillation Ip = 150A sensitive applications. Absolute Maximum Rating Parameter Max. Units Ip @ Tp =25C Continuous Drain Current 150 A tp @To=100C | Continuous Drain Current 120 A lom Pulse Drain Current L 720 | A Pp @ To=25C Maximum Power Dissipation 625 Ww Ves Gate-to-Source Voltage 20 v Vins R.M.S. Isolation Voltage, circuit to base 25 kV Ty Operating Junction Temperature Range -40 to 150 C Tstq Storage Temperature Range -40 to 150 C Thermal and Mechanical Specifications _____| Parameter Min. Typ. | Max. Units Pinuc Junction-to-Case - : 0.20 KW Fines Case-to-Sink, smooth & greased surface - o1 | - KAW T Mounting Torque +10% _ @ HEXpak to Heatsink : 5 - Nm Busbar to HEXpak | 3 Nm wt Approximate Weight - 140 - lg | - 5 oz Notes: ' @ - Repetitive Rating: Pulse width limited by maximum junction temperature see figure 8. - Per Module. - Amounting compound is recommended and the torque should be rechecked after a period of three hours to allow for the spread of the compound.IRFK6H150,IRFK6F150 Electrical Characteristics @ T, = 25C (Unless otherwise specified) Parameter _ | Min. | Typ. | Max. | Units | Test Conditions Bypss Drain-to-Source Breakdown 100 - - Vv Vag=OV, Ip=1.0mA voltage a Fogion) Static Drain-to-Source - 8 10 MQ. | Veg=10V, ip=120A On-State Resistance jo lpyon) On-State Drain Current 150 - - A | Vpg> lion) Rogyonmax, Vag=10V Vesithy Gate Threshold Voltage 2.0 - 40 V_ | Vog=V@g; Ip=1.5mA Is Forward Transconductance 7% | 120] - SS |Vpg>50V,Ip-1204 loss Zero Gate Voliage Drain Current - - 1.5 | MA | Vpg=Vpgiax, Vgg=0v - - | 60 | mA | Vgg=10V, Tp=125C, _ | Vpg=Vpgmax x 0.8 lass Gate-to-Source Leakage Forward - - 600 nA | Vgg=20V lass Gate-to-Source Leakage Reverse 4 - - 600 | nA | Vgg=-20V Qg Total Gate Charge - 530 750 nC | Ip=150A, Vgg=10V, Qgs Gate-to-Source Charge - 100 | 150 nC | Vpg=Vpgmax x 0.8 Qgq Gate-to-Drain ("Miller") Charge - 250 350 nc taon) Turn-on Delay Time IRFK6H150 ~ 105 - ns__| Vpp=40V, Ip=120A, IRFK6J150 - 120 > ns t Rise Time IRFK6H150 > 460 - ns_| Vgg=10V, IRFK6J150 : 570 - ns tarot Turn-off Delay Time IRFK6H150 | 300 | - | ns | Rsgqurce=332 | IRFK6J150 - | 400 [| - ns. i Fall Time IRFK6H150 ~ 150 > ns (RFK6J150 - 240 - ns Lys Drain-to-Source Inductance - 18) - nH Cig Input Capacitance - toy - nF | Vag=0V, Vpg=25V,. Coss Output Capacitance > 6.0 - | nF | t#1.0MHz Crs Reverse Transfer Capacitance - . - nF Linear Derating Factor | - - 5 WiK Source-Drain Diode Ratings and Characteristics | Parameter [_Min. | Typ. | Max. ] Units | Test Conditions Ig Continuous Source Current - - 150 A (Body Diode) Ign Pulsed Source Current - - 665 A (Body Diode) Vep Diode Forward Voltage ~ - 25 v | Vag0V, Ig= 150A, Tp=25C lt, Reverse Recovery Time 90 | 190 390 | ns di/dt=400A/us, T=150C Qy Reverse Recovered Charge 45 | 10.0 | 20.0 | uc | Ig=150A Notes: - Pulse Width < 300us; Duty cycle < 2%.IRFK6H150,IRFK6F150 Ip, DRAIN CURRENT (AMPERES, {AMPERES} p. DRAIN CURRENT + q 4.5V 20us WIDTH Te = 25C so-4 Vpg. ORAIN-TO-SOURCE VOLTAGE (VOLTS, Fig 1. Typical Output Characteristics, Tp=25C Vpg = SOV 20us PULSE WIDTH Veg. GATE-TO-SOURCE. VO!.TAGE (VOLTS) Fig 3. Typical Transfer Characteristics ORAIN-TO-SOURCE ON RESISTANCE Ros (an) + (AMPERES; Ip, ORALN CURRENT 20us WIDTH To = 150C 207 Vpg. DRAIN-TO-SQURCE VOLTAGE (VOLTS Fig 2. Typical Output Characteristics, To=150C (NORMALIZED = 2 eo Yes = Ty, JUNCTION TEMPERATURE ( c). Fig 4. Normalized On-Resistance Vs. TemperatureIRFK6H150,IRFK6F150 Cgs + Cog Cos Cgq + C, CAPACITANCE (pf) Vpg, URAIN-TO-SOURCE VOLTAGE (VOLTS) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Isp, REVERSE ORAIN CURRENT (AMPERES) Vgg = OV Vp. SOURCE-TO-DRAIN VOLTAGE (VOLTS) Fig 7. Typical Source-Drain Diode Forward Voltage @ no a Ves. GATE-TO-SOURCE VOLTAGE (VOLTS} a FOR TEST CIRCUIT SEE FIGURE 14 Gg. TOTAL GATE CHARGE (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage io a 3 me Ip, DRAIN CURRENT (AMPERES) a =150 T-150C 4 10 1 Vpg. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig 8. Maximum Safe Operating AreaIRFK6H150,IRFK6F150 DRAIN CURRENT (AMPERES) Ip. To, CASE TEMPERATUFE ( c) Fig 9. Maximum Drain Current Vs. Case Temperature THERMAL RESPONSE (Zh Jc) NOTES: 1. DUTY FACTOR, Dsty/ty 2. PEAK T. x + 1 10-4 1 1 O.4 1 ty, RECTANGULAR PULSE DURATION (SECONDS) Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case} @.... Seer ore a ats IRFK6H150,IRFK6F150 IRFK6H... or IRFK6J... Ro Pulse Width < tus _ Duty Factor < 0.1% _ Fig 11a. Switching Time Test Circuit Vos 90% 10% Ves Fig 11b. Switching Time Waveforms[TER] IRFK6H150,IRFK6F150 Circuit Configuration and Outline D [ a} as) a? a | AES ] S&S s 921882) 20(218) _ 2 HOLES a 60 | / 65.288) | [7 (0236) TES F (er 215 0 (0846) (153 {0868} M5 SCREW 28 x 08 FASTON TAB [ WITH 1.2 HOLE NOTE: DEVICE IS SUPPLIED WITH AUXILARY LEADS 200(7.87) LONG All dimensions in millimetres (inches)u IRFK6H150,IRFK6F150 Part Numbering HEX-pak Module. Number of HEXFETs in parallel. H - Fast switching. J - Oscillation resistant for sensitive applications. Voltage code:- 054 - 60V 150 - 100V 250 - 200V 350 - 400V 450 - 500V C50 - 600V WORLD HEADQUARTERS: EUROPEAN HEADQUARTERS: CANADA: CZECHOSLOVAKIA: DENMARK: FRANCE: FINLAND: GERMANY: HUNGARY: HONG KONG: ITALY: INDIA: SINGAPORE: SWEDEN: SWITZERLAND: U.S.A: Central Zone: Eastern Zone: Southern Zone: Western Zone: Jn the interest of product Improvement INTERNATIONAL RECTIFIER reserves the right fo change specifications at any time without notice. 233 Kansas St., EL SEGUNDO, California 90245, USA. Tel:(213) 772-2000. Tlx:664464, Fax:(213} 772-9028 Hurst Green, OXTED, Surrey RH8 9BB, UK. Tel:(0883) 713215. Tlx-85219. Fax:(0883)7 14234. 101 Bentley St., Markham, ONTARIO L3R 3LI. Tel:(416)475-1897. Tlx:06-966-650. Fax:(416)475-8801 Macurova 19/1565, Box 30, 149 00 PRAGUE. Tel:(2) 792 6831. Fax:(2) 792 6831. P.O. Box 70, Krogshoejvej 51, DK-2880 BAGSVAERD. Tel: (45) 44 37 71 50. Fax (45) 44 37 71 52. 123 Rue de Petit Vaux, 91360 EPINAY sur ORGE. Tel:(1)64.54.83.29, Tix:600943. Fax:(1)64.54.83.30. Billskagsvagen 19, 02580 Sjundea St. Tel:(0) 262 8144. Fax.(0) 262 8150. Saalburgstr. 157, D-6380 BAD HOMBURG. Tel:(61)72 37066. TIx:410404, Fax:(61)72 37065. Szent Istvan Park 15, H-1137 BUDAPEST. Tel:(1) 1298 822. Fax:(1} 1298 822. 202 Peter Buidling, 60 Queens Road Central, HONG KONG. Tel:(85) 252 36355. Fax: (85) 284 52908. Via Liguria 49, 10071 Borgaro, TORINO. Tel:(011)470 14 84. TIx:221257. Fax:(011)470 42 90. Via Zucca 8, 20017 Rho MILANO. Tel:(02)93 50 36 50. Fax:(02)93 50 36 55. Via Arno 1, 40139 BOLOGNA. Tel:(05149 33 07. Fax:(051)49 54 80. 31 Greenacre, 5 Union Park, Khar (W), BOMBAY 400 052. Tel:(022)535026/533779/540242. TIx:011-71481. K & H Bldg. 2F, 3-30-4 Nishi-Ikebukuro, Toshima-ku, TOKYO, Japan 171. Tel:(03)983 0641. Fax:(03)983 0642. HEX 10-01 Fortune Centre, 190 Middle Road, SINGAPORE 0718. Tel:(65)336 3922/337 4695/336 6286. Fax: (65)337 4692. h Box: 86, S-162 12 Vallingby 1, STOCKHOLM. Tel:(08)870035. Fax:(08)874242, CH-8032 ZURICH, Kirchenweg 9. Tel:(01}386 8702/8686. Fax:(01}383 5108/2379. 2401 Pium Grove Road, Suite 111, PALATINE, IL60067. Tel:(312)397-0002. Fax:(312)397-0114. . ! 71 Grand Avenue, PALISADES PARK, NJ07650. Tel:(201)943-4554. Fax:(201)943-5754. 800 Office Plaza Blvd., Suite 401, KISSIMMEE, FL32743. Tel:(407)933-2383. Fax:(407)933-2293. 222 Kansas Street, EL SEGUNDO, CA90245. Tel:(213)607-8886. Fax:(213)640-6533. Sales Offices, Agents and Distributors in Major Cities throughout the World. MJWwit/92