2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SC5200/FJL4315 Rev. C 1
January 2009
2SC5200/FJL4315
NPN Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier
• General Purpose Power Amplifier
Features
• High Current Capability: IC = 17A.
• High Power Dissipation : 150watts.
• High Frequency : 30MHz.
• High Voltage : VCEO=250V
• Wide S.O.A for reliable operation.
• Excellent Gain Linearity for low THD.
• Complement to 2SA1943/FJL4215.
• Thermal and electrical Spice models are available.
• Same transistor is also available in:
-- TO3P package, 2SC5242/FJA4313 : 130 watts
-- TO220 package, FJP5200 : 80 watts
-- TO220F package, FJPF5200 : 50 watts
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* Ta=25°C unless otherwise noted
* Device mounted on min imu m pad size
hFE Classification
Symbol Parameter Ratings Units
BVCBO Collector-Base Voltage 250 V
BVCEO Collector-Emitter Voltage 250 V
BVEBO Emitter-Base Voltage 5 V
ICCollector Current(DC) 17 A
IBBase Current 1.5 A
PDTotal Device Dissipation(TC=25°C)
Derate above 25°C150
1.04 W
W/°C
TJ, TSTG Junction and Storage Temperature - 50 ~ +150 °C
Symbol Parameter Max. Units
RθJC Thermal Resistance, Junction to Case 0.83 °C/W
Classification R O
hFE1 55 ~ 110 80 ~ 160
1.Base 2.Collector 3.Emitter
1TO-264
2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SC5200/FJL4315 Rev. C 2
Electrical Characteristics* Ta=25°C unless otherwise noted
* Pulse Test: Pulse Width=2 0µs, Duty Cycle≤2%
Ordering Information
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC=5mA, IE=0 250 V
BVCEO Collector-Emitter Breakdown Voltage IC=10mA, RBE=∞250 V
BVEBO Emitter-Base Breakdown Voltage IE=5mA, IC=0 5 V
ICBO Collector Cut-off Current VCB=230V, IE=0 5.0 µA
IEBO Emitter Cut-off Current VEB=5V, IC=0 5.0 µA
hFE1 DC Current Gain VCE=5V, IC=1A 55 160
hFE2 DC Current Gain VCE=5V, IC=7A 35 60
VCE(sat) Collector-Emitter Saturation Voltage IC=8A, IB=0.8A 0.4 3.0 V
VBE(on) Base-Emitter On Voltage VCE=5V, IC=7A 1.0 1.5 V
fTCurrent Gain Bandwidth Product VCE=5V, IC=1A 30 MHz
Cob Output Capacitance VCB=10V, f=1MHz 200 pF
Part Number Marking Package Packing Method Remarks
2SC5200RTU C5200R TO-264 TUBE hFE1 R grade
2SC5200OTU C5200O TO-264 TUBE hFE1 O grade
FJL4315RTU J4315R TO-264 TUBE hFE1 R grade
FJL4315OTU J4315O TO-264 TUBE hFE1 O grade
2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SC5200/FJL4315 Rev. C 3
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain ( R grade )
Figure 3. DC current Gain ( O grade ) Figure 4. Collector-Emitter Saturation Voltage
Figure 5. Base-Emitter On Voltage Figure 6. Base-Emitter Saturat ion Voltage
0 2 4 6 8 10 12 14 16 18 20
0
2
4
6
8
10
12
14
16
IB = 0
IB=200mA
IB = 120mA
IB = 140mA
IB = 160mA
IB = 180mA
IB = 100mA
IB = 60mA
IB = 80mA
IB = 40mA
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
110
1
10
100
Vce=5V
Tj=-25oC
Tj=25oC
Tj=125oC
hFE, DC CURRENT GAIN
Ic [A ], COLL EC TO R C UR RE NT
110
1
10
100
Vce=5V
Tj=-25oC
Tj=25oC
Tj=125oC
hFE, DC CURRENT GAIN
Ic [A ], COLL EC TO R C UR RE NT
0.1 1 10
1
10
100
1000
10000
Ic=10Ib
Tj=-25oC
Tj=25oC
Tj=125oC
Vce(sat)[mV], SATURATION VOLTAGE
Ic[A], C OL L E CT OR CU RR EN T
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0
2
4
6
8
10
12 VCE = 5V
IC[A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
0.1 1 10
100
1000
10000
Ic=10Ib
Tj=-25oCTj=25oC
Tj=125oC
Vbe(sat)[mV], SATURATION VOLTAGE
Ic[A], COLLECTOR CURRENT
2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SC5200/FJL4315 Rev. C 4
Typical Characteristics
Figure 7. Power Derating Figure 8. Safe Operating Area
Figure 9. Power Derating
1E-6 1E-5 1E-4 1E-3 0.01 0.1 1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Transient Thermal Resistance, Rthjc[oC / W]
Pulse duration [sec] 110100
0.01
0.1
1
10
100
*SING LE NONREPETITIVE
PULSE TC=25[oC]
10ms*
100ms*
DC
IC MAX. (Pulsed*)
IC MAX. (DC)
IC [A], COLLECTOR CURRENT
VCE [V], COL L ECT OR-EM IT T ER V OLT A GE
0 25 50 75 100 125 150 175
0
20
40
60
80
100
120
140
160
PC[W], POWER DISSI PA TION
TC[oC], CASE TEMPERATURE
2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SC5200/FJL4315 Rev. C 5
Package Dimensions
5.45TYP
[5.45
±0.30
]5.45TYP
[5.45
±0.30
]
4.90
±0.20
20.00
±0.20
(8.30) (8.30) (1.00)
(0.50)
(2.00
)
(7.00)
(R1.00)
(R2.00)
ø3.30
±0.20
(7.00)
(1.50)
(1.50) (1.50)
2.50
±0.20
3.00
±0.20
2.80
±0.3
0
1.00
+0.25
–0.10
0.60
+0.25
–0.10
1.50
±0.20
6.00
±0.20
20.00
±0.20
20.00
±0.50
5.00
±0.20
3
.50
±0.20
2.50
±0.10
(9.00)
(9.00)
(2.00)
(
1.50)
(0.15)
(
2.80) (4.00)
(11.00)
TO-264
Dimensions in Millimeters
2SC5200/FJL4315 NPN Epitaxial Silicon Transistor2SC5200/FJL4315
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SC5200/FJL4315 Rev. C 6